公开(公告)号：US20030081642A1

公开(公告)日：2003-05-01

申请号：US10000672

申请日：2001-10-31

Applicant: APPLIED OPTOELECTRONICS, INC.

Inventor： Wen-Yen Hwang ,  Chih-Hsiang Lin ,  Jun Zheng ,  James N. Baillargeon

IPC: H01S003/10 ,  H01S005/00

CPC classification number: H01S5/18341 ,  H01S5/021 ,  H01S5/0215 ,  H01S5/06206 ,  H01S5/18302 ,  H01S5/18369 ,  H01S5/3095

Abstract: An embodiment of a surface-emitting laser structure includes a first semiconductor region of a first conductivity type coupled to a first contact and a second semiconductor region of the same conductivity type coupled to a second contact. A third semiconductor region of the opposite conductivity type is coupled to a third contact and interposed between the first and second semiconductor regions. An active region is interposed between the first and third regions. In a further embodiment, the laser structure may include a variable refractive index structure interposed between the second and third semiconductor regions. In another embodiment, a surface-emitting laser structure may include an active region between a first semiconductor region of a first conductivity type coupled to a first contact, and a second semiconductor region of opposite conductivity type coupled to a second contact. A third electrical contact is dielectrically spaced from the second semiconductor region.

Abstract translation: 表面发射激光器结构的实施例包括耦合到第一触点的第一导电类型的第一半导体区域和与第二触点耦合的相同导电类型的第二半导体区域。 具有相反导电类型的第三半导体区域耦合到第三接触并插入在第一和第二半导体区域之间。 有源区域介于第一和第三区域之间。 在另一实施例中，激光器结构可以包括插入在第二和第三半导体区域之间的可变折射率结构。 在另一个实施例中，表面发射激光器结构可以包括耦合到第一触点的第一导电类型的第一半导体区域和耦合到第二触点的相反导电类型的第二半导体区域之间的有源区。 第三电接触件与第二半导体区域介电地间隔开。

公开(公告)号：US20020080836A1

公开(公告)日：2002-06-27

申请号：US10002994

申请日：2001-11-30

Applicant: APPLIED OPTOELECTRONICS, INC.

Inventor： Wen-Yen Hwang

IPC: H01S005/00 ,  H01S003/08

CPC classification number: H01S5/18375 ,  H01S5/0217 ,  H01S5/041 ,  H01S5/141 ,  H01S5/18377 ,  H01S5/1838

Abstract: A vertical-cavity surface-emitting laser (VCSEL) structure has a semiconductor bottom distributed Bragg reflector (DBR) arranged over a substrate; a metal mirror layer interposed between the bottom DBR and the substrate, wherein the metal mirror layer and bottom DBR are adapted to form a first mirror of the laser structure; and a reaction barrier layer interposed between the metal mirror layer and the bottom DBR, wherein the reaction barrier layer is adapted to reduce reaction between the metal mirror layer and the bottom DBR. A phase matching layer is interposed between the reaction barrier layer and the bottom DBR to adjust the phase of radiation reflected by the metal mirror layer such that an increased overall reflectance is obtained. The VCSEL is fabricated by bonding a first metal bonding layer formed over the bottom DBR and a metal mirror layer on a first substrate to a second metal bonding layer formed on a second substrate.

Abstract translation: 垂直腔表面发射激光器（VCSEL）结构具有布置在衬底上的半导体底部分布布拉格反射器（DBR）; 插入在底部DBR和基板之间的金属镜面层，其中金属镜面层和底部DBR适于形成激光结构的第一反射镜; 以及插入在金属镜面层和底部DBR之间的反应阻挡层，其中反应阻挡层适于减少金属镜面层和底部DBR之间的反应。 在反应阻挡层和底部DBR之间插入相位匹配层，以调整由金属镜面层反射的辐射相位，从而获得增加的总反射率。 通过将形成在第一衬底上的第一金属结合层和第一衬底上的金属镜层结合到形成在第二衬底上的第二金属结合层来制造VCSEL。

公开(公告)号：US20030076866A1

公开(公告)日：2003-04-24

申请号：US10198683

申请日：2002-07-18

Applicant: APPLIED OPTOELECTRONICS, INC.

Inventor： James N. Baillargeon ,  Wen-Yen Hwang ,  Klaus Alexander Anselm ,  Chih-Hsiang Lin

IPC: H01S003/08

CPC classification number: H01S3/1303 ,  H01S3/131 ,  H01S3/1392 ,  H01S5/0687

Abstract: A multiple reflectivity band reflector (MRBR) includes a stack of dielectric layers, arranged so that the reflector has a reflectivity profile comprising a plurality of reflectivity bands, e.g. at least first and second wavelength bands with reflectivity above a lasing threshold reflectivity, separated by a third wavelength band between the first and second wavelength bands having reflectivity below the lasing threshold reflectivity. A laser having at least a first mirror and an MRBR as the second mirror has a laser cavity, at least a portion of which is defined by the first mirror and the MRBR. An active region located within the laser cavity contains a material that is capable of stimulated emission at one or more wavelengths in the first and second wavelength bands. The gain spectrum of the laser is adjusted to select one of the first and second wavelength bands, thereby providing for lasing at a wavelength within the selected wavelength band. The laser may be, e.g., a monolithic VCSEL or a one-section or two-section external-cavity VECSEL having the MRBR as one of its cavity mirrors.

Abstract translation: 多反射带反射器（MRBR）包括一叠电介质层，其布置成使得反射器具有包括多个反射带的反射率分布， 具有高于激光阈值反射率的反射率的至少第一和第二波长带，其具有低于激光阈值反射率的反射率的第一和第二波长带之间的第三波长带分隔开。 具有至少第一反射镜和MRBR作为第二反射镜的激光器具有激光腔，其至少一部分由第一反射镜和MRBR限定。 位于激光腔内的有源区域包含能够在第一和第二波长带中的一个或多个波长处受激发射的材料。 调整激光器的增益光谱以选择第一和第二波长带中的一个，从而提供在所选波长带内的波长处的激光。 激光器可以是例如单片VCSEL或具有MRBR作为其腔镜之一的单段或两段外腔VECSEL。

公开(公告)号：US20030053512A1

公开(公告)日：2003-03-20

申请号：US10196651

申请日：2002-07-16

Applicant: APPLIED OPTOELECTRONICS, INC.

Inventor： James N. Baillargeon ,  Wen-Yen Hwang ,  Chih-Hsiang Lin

IPC: H01S003/08

CPC classification number: H01S5/18361 ,  H01S5/0687

Abstract: A laser apparatus has a first mirror, a second mirror, at least a portion of which is defined by the first and second mirrors. The laser has an active region located in the laser cavity, which is capable of stimulated emission at one or more wavelengths of light. The second mirror comprises a plurality of dielectric layers arranged in parallel and having a reflectivity band with a peak reflectivity at a peak wavelength, said reflectivity band having a width of less than 1 nm at a reflectivity of 3% less than the peak reflectivity. The laser apparatus may be a tunable laser apparatus in which the peak wavelength of the reflectivity band is adjusted, thereby adjusting the lasing wavelength of the laser. The reflectivity band may be a lasing threshold reflectivity band over which the reflectivity of the second mirror is greater than a lasing threshold reflectivity which is sufficient to permit lasing.

Abstract translation: 激光装置具有第一反射镜，第二反射镜，其至少一部分由第一和第二反射镜限定。 激光器具有位于激光器腔中的有源区，其能够在一个或多个波长的光下被激发。 第二反射镜包括平行排列并具有在峰值波长处具有峰值反射率的反射率带的多个电介质层，所述反射率带的反射率比峰值反射率小3％，其宽度小于1nm。 激光装置可以是其中调整反射带的峰值波长的可调谐激光装置，从而调节激光器的激光波长。 反射率带可以是激光阈值反射带，第二反射镜的反射率大于其足以允许激光的激光阈值反射率。

公开(公告)号：US20020163942A1

公开(公告)日：2002-11-07

申请号：US10029008

申请日：2001-12-20

Applicant: APPLIED OPTOELECTRONICS, INC.

Inventor： James N. Baillargeon ,  Wen-Yen Hwang ,  Klaus Alexander Anselm ,  Chih-Hsiang Lin

IPC: H01S003/10 ,  H01S003/13

CPC classification number: H01S3/1303 ,  H01S3/131 ,  H01S3/1392 ,  H01S5/0687

Abstract: A monitored laser system includes a laser with a first mirror and an exit mirror. The laser also has a laser cavity defined at least in part by the first mirror and the exit mirror. Within the laser cavity is an active region that contains material that is capable of stimulated emission at one or more wavelengths such that laser light is emitted from the laser. A power source is coupled to the active region. A multiple reflectivity band reflector (MRBR) is coupled to at least a portion of the emitted laser light. The MRBR has at least first and second wavelength bands with reflectivity above a particular reflectivity separated by at least a third wavelength band having reflectivity below the particular reflectivity. A first photodiode is coupled to at least a portion of the filtered laser light and produces an output based on the amount and wavelength of light received. A means for adjusting the emitted wavelength of the laser toward a particular wavelength in one of the at least first, second, and third wavelength bands based at least in part on the output of the first photodiode.

Abstract translation: 被监视的激光系统包括具有第一反射镜和出射镜的激光器。 激光器还具有至少部分地由第一反射镜和出射镜限定的激光腔。 在激光腔内是包含能够在一个或多个波长处被激发的材料的激活区域，使得激光从激光器发射。 电源耦合到有源区。 多反射带反射器（MRBR）耦合到所发射的激光的至少一部分。 MRBR具有至少第一和第二波长带，其具有高于具有低于特定反射率的反射率的至少第三波长带隔开的特定反射率的反射率。 第一光电二极管被耦合到滤波的激光的至少一部分，并且基于所接收的光的量和波长产生输出。 用于至少部分地基于第一光电二极管的输出，将至少第一，第二和第三波长带中的一个波长的激光发射波长调整到特定波长的装置。

公开(公告)号：US20030213950A1

公开(公告)日：2003-11-20

申请号：US10463067

申请日：2003-06-17

Applicant: APPLIED OPTOELECTRONICS, INC.

Inventor： Wen-Yen Hwang

IPC: H01L029/06

CPC classification number: H01S5/0224 ,  H01L21/76256 ,  H01L33/0079 ,  H01L33/105 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/183 ,  H01S2301/173 ,  Y10T428/12493 ,  Y10T428/12528 ,  Y10T428/12674 ,  Y10T428/31678

Abstract: A substrate including a base substrate, an interfacial bonding layer disposed on the base substrate, and a thin film adaptive crystalline layer disposed on the interfacial bonding layer. The interfacial bonding layer is solid at room temperature, and is in liquid-like form when heated to a temperature above room temperature. The interfacial bonding layer may be heated during epitaxial growth of a target material system grown on the thin film layer to provide the thin film layer with lattice flexibility to adapt to the different lattice constant of the target material system. Alternatively, the thin film layer is originally a strained layer having a strained lattice constant different from that of the target material system but with a relaxed lattice constant very close to that of the target material system, which lattice constant is relaxed to its relaxed value by heating the interfacial bonding layer after the thin film layer is removed from the first semiconductor substrate, so that the thin film layer has an adjusted lattice constant equal to its unstrained, relaxed value and very close to the lattice constant of the target material system.

Abstract translation: 包括基底基板，设置在基底基板上的界面粘合层和设置在界面粘接层上的薄膜自适应晶体层的基板。 界面接合层在室温下为固体，当加热至室温以上时呈液状。 可以在生长在薄膜层上的目标材料体系的外延生长期间加热界面结合层，以提供具有晶格柔性的薄膜层，以适应目标材料体系的不同晶格常数。 或者，薄膜层最初是具有与目标材料体系不同的应变晶格常数的应变层，但具有非常接近目标材料体系的松弛晶格常数，该晶格常数通过 在从第一半导体衬底去除薄膜层之后加热界面结合层，使得薄膜层具有等于其未约束，松弛值并且非常接近靶材系统的晶格常数的调整晶格常数。

公开(公告)号：US20030185267A1

公开(公告)日：2003-10-02

申请号：US10109288

申请日：2002-03-28

Applicant: APPLIED OPTOELECTRONICS, INC.

Inventor： Wen-Yen Hwang ,  Klaus Alexander Anselm ,  Jun Zheng

IPC: H01S003/08

CPC classification number: H01S5/18358 ,  H01S5/1833 ,  H01S5/18338 ,  H01S5/18369 ,  H01S5/205 ,  H01S2301/166

Abstract: A surface-emitting laser, such as a VCSEL, for generating single-transverse mode laser light at a lasing wavelength, has a first mirror and a second mirror positioned so as to define a laser cavity therebetween, and a semiconductor active region disposed between the first and second mirrors for amplifying, by stimulated emission, light in the laser cavity at the lasing wavelength. An annular antiguide structure is disposed within the laser cavity and between the active region and one of the first and second mirrors, the annular antiguide structure comprising an antiguide material and having a central opening, the central opening comprising a second material having an index of refraction for light at the lasing wavelength smaller than that of the antiguide material, whereby the annular antiguide structure causes preferential antiguiding of higher order transverse lasing modes in the laser cavity.

Abstract translation: 用于产生激光波长的单横模式激光的诸如VCSEL的表面发射激光器具有定位成在其间限定激光腔的第一反射镜和第二反射镜，以及位于 第一和第二镜，用于通过受激发射在激光波长处放大激光腔中的光。 环形防水结构设置在激光腔内并且在有源区域与第一和第二反射镜之一之间，环形防水结构包括防护材料并具有中心开口，中心开口包括具有折射率的第二材料 对于激光波长小于抗蚀剂材料的波长的光，由此环形抗蚀剂结构在激光腔中引起较高阶横向激光模式的优先防御。

公开(公告)号：US20030053511A1

公开(公告)日：2003-03-20

申请号：US10198373

申请日：2002-07-18

Applicant: APPLIED OPTOELECTRONICS, INC.

Inventor： James N. Baillargeon ,  Wen-Yen Hwang ,  Klaus Alexander Anselm ,  Chih-Hsiang Lin

IPC: H01S003/10 ,  H01S003/04 ,  H01S003/08 ,  H01S003/082

CPC classification number: H01S3/1303 ,  H01S3/131 ,  H01S3/1392 ,  H01S5/0687

Abstract: A multiple reflectivity band reflector (MRBR) includes a stack of dielectric layers, arranged so that the reflector has a reflectivity profile comprising a plurality of reflectivity bands, e.g. at least first and second wavelength bands with reflectivity above a lasing threshold reflectivity, separated by a third wavelength band between the first and second wavelength bands having reflectivity below the lasing threshold reflectivity. A laser having at least a first mirror and an MRBR as the second mirror has a laser cavity, at least a portion of which is defined by the first mirror and the MRBR. An active region located within the laser cavity contains a material that is capable of stimulated emission at one or more wavelengths in the first and second wavelength bands. The gain spectrum of the laser is adjusted to select one of the first and second wavelength bands, thereby providing for lasing at a wavelength within the selected wavelength band. The laser may be, e.g., a monolithic VCSEL or a one-section or two-section external-cavity VECSEL having the MRBR as one of its cavity mirrors.

Abstract translation: 多反射带反射器（MRBR）包括一叠电介质层，其布置成使得反射器具有包括多个反射带的反射率分布， 具有高于激光阈值反射率的反射率的至少第一和第二波长带，其具有低于激光阈值反射率的反射率的第一和第二波长带之间的第三波长带分隔开。 具有至少第一反射镜和MRBR作为第二反射镜的激光器具有激光腔，其至少一部分由第一反射镜和MRBR限定。 位于激光腔内的有源区域包含能够在第一和第二波长带中的一个或多个波长处受激发射的材料。 调整激光器的增益光谱以选择第一和第二波长带中的一个，从而提供在所选波长带内的波长处的激光。 激光器可以是例如单片VCSEL或具有MRBR作为其腔镜之一的单段或两段外腔VECSEL。

公开(公告)号：US20030043866A1

公开(公告)日：2003-03-06

申请号：US10198528

申请日：2002-07-18

Applicant: APPLIED OPTOELECTRONICS, INC.

Inventor： James N. Baillargeon ,  Wen-Yen Hwang ,  Klaus Alexander Anselm ,  Chih-Hsiang Lin

IPC: H01S003/13 ,  H01S003/08 ,  G02B005/28

CPC classification number: H01S3/1303 ,  H01S3/131 ,  H01S3/1392 ,  H01S5/0687

Abstract: A monitored laser system has a laser having a first mirror; an exit mirror, at least a portion of a laser cavity defined by the first mirror and the exit mirror; and an active region located in the laser cavity, the active region containing a material that is capable of stimulated emission at one or more wavelengths of laser light within a tuning range of the laser. A multiple reflectivity band reflector (MRBR) is coupled to at least a portion of laser light emitted from the laser and transmits filtered laser light. The MRBR has a plurality of layers of material arranged in parallel such that the reflector has a plurality of reflectivity peaks within the tuning range, each reflectivity peak separated from neighboring reflectivity peak by a reflectivity trough having a trough minimum, said reflectivity peaks characterized by a peak profile and said trough minima between said reflectivity peaks characterized by a trough profile. At least one of the peak and trough profiles has a substantially non-constant relationship of wavelength to reflectivity. A first photodiode coupled to at least a portion of the filtered laser light produces an output based on the amount of light received. The emitted wavelength of the laser is adjusted toward a desired wavelength within the tuning range based at least in part on the output of the first photodiode.

Abstract translation: 所监视的激光系统具有具有第一反射镜的激光器; 出射镜，由第一反射镜和出射镜限定的激光腔的至少一部分; 以及位于所述激光腔中的有源区域，所述有源区域包含能够在所述激光器的调谐范围内的激光的一个或多个波长处受激发射的材料。 多反射带式反射器（MRBR）耦合到从激光器发射的激光的至少一部分并透射滤波的激光。 MRBR具有平行布置的多层材料，使得反射器在调谐范围内具有多个反射率峰值，每个反射率峰值与相邻反射率峰值分离具有波谷最小值的反射率波谷，所述反射率峰值以 在所述反射率峰值之间的峰值曲线和所述的谷值最小值，其特征在于波谷曲线。 峰值和谷值曲线中的至少一个具有波长与反射率之间基本上不恒定的关系。 耦合到滤波的激光的至少一部分的第一光电二极管基于所接收的光量产生输出。 至少部分地基于第一光电二极管的输出，在调谐范围内将激光的发射波长调节到期望的波长。