公开(公告)号：US20200371437A1

公开(公告)日：2020-11-26

申请号：US16766490

申请日：2018-11-23

Applicant: ARKEMA FRANCE

Inventor： Xavier CHEVALIER ,  Ilias ILIOPOULOS

IPC: G03F7/095 ,  G03F7/00 ,  G03F7/20 ,  G03F7/42 ,  G03F1/78

Abstract: The invention relates to a method for manufacturing a flat polymeric stack, said stack comprising one or more first and one second layer of (co)polymer (20, 30) stacked one on the other, the first underlying (co)polymer layer (20) not having undergone any prior treatment allowing its crosslinking, at least one of the (co)polymer layers initially being in a liquid or viscous state, said method being characterized in that the upper layer (30), known as the top coat (TC), is deposited on the first layer (20) in the form of a prepolymer composition (pre-TC), comprising one or more monomer(s) and/or dimer(s) and/or oligomer(s) and/or polymer(s) in solution, and in that it is then subjected to a stimulus capable of causing a crosslinking reaction of the molecular chains within said layer (30, TC).

公开(公告)号：US20200172670A1

公开(公告)日：2020-06-04

申请号：US16640178

申请日：2018-09-10

Applicant: Arkema France

Inventor： Benoît BRULE ,  Nadine DECRAEMER ,  Ilias ILIOPOULOS

IPC: C08G65/40 ,  B29C71/00 ,  B29C71/02

Abstract: A part including polyetherketoneketone, in which the polyetherketoneketone is at least partially crystalline and in which at least 50% by weight of the crystalline polyetherketoneketone is of form 1. Also a process for the manufacture of such a part, the process including the provision of polyetherketoneketone; the shaping of the polyetherketoneketone and the at least partial crystallization of the polyetherketoneketone in the form 1.

公开(公告)号：US20150328661A1

公开(公告)日：2015-11-19

申请号：US14809722

申请日：2015-07-27

Applicant: ARKEMA FRANCE ,  CNRS ,  UNIVERSITÉ DE BORDEAUX ,  INSTITUT POLYTECHNIQUE DE BORDEAUX

Inventor： Christophe NAVARRO ,  Xavier CHEVALIER ,  Celia NICOLET ,  Ilias ILIOPOULOS ,  Raluca TIRON ,  Guillaume FLEURY ,  Georges HADZllOANNOU

IPC: B05D3/04 ,  B05D1/00 ,  G03F1/50 ,  B05D3/02

CPC classification number: B05D3/046 ,  B05D1/005 ,  B05D3/0254 ,  C08F293/005 ,  C08F2438/02 ,  C08J5/18 ,  C08J2353/00 ,  C08L53/00 ,  C08L2205/025 ,  C08L2205/03 ,  C09D153/00 ,  G03F1/50 ,  G03F1/68 ,  G03F7/0002

Abstract: The present invention relates to a process for producing nanostructured films obtained from block copolymers exhibiting a dispersity index of between 1.1 and 2, limits included, without nanostructuring defects, on a surface, in order for this treated surface to be able to be used as masks for applications in microelectronics.