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1.发明申请公开(公告)号：US20180330784A1
公开(公告)日：2018-11-15
申请号：US15590987
申请日：2017-05-09
申请人： ARM Ltd.
IPC分类号： G11C13/00
CPC分类号： G11C13/0069 , G11C13/0007 , G11C2013/0078 , G11C2213/74 , G11C2213/79
摘要： Subject matter disclosed herein may relate to correlated electron switch elements and, more particularly, to controlling current through correlated electron switch elements during programming operations.
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公开(公告)号：US20180254084A1
公开(公告)日：2018-09-06
申请号：US15966230
申请日：2018-04-30
申请人： ARM Ltd.
发明人： Azeez Jennudin Bhavnagarwala , Lucian Shifren , Piyush Agarwal , Akshay Kumar , Robert Campbell Aitken
IPC分类号： G11C13/00
CPC分类号： G11C13/0069 , G11C13/0002 , G11C2013/0073 , G11C2213/15 , G11C2213/79 , G11C2213/82
摘要： Disclosed are methods, systems and devices for operation of non-volatile memory devices. In one aspect, a correlated electron switch (CES) device may be placed in any one of multiple memory states in a write operation. A plurality of bitcells may be connectable to a common source voltage during a two-phase operation to place individual bitcells in intended impedance states.
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公开(公告)号：US20180247693A1
公开(公告)日：2018-08-30
申请号：US15936212
申请日：2018-03-26
申请人： ARM Ltd.
CPC分类号： G11C13/0069 , G11C13/0002 , G11C13/0004 , G11C13/0007 , G11C13/0011 , G11C13/0038 , G11C13/004 , G11C13/0097 , G11C2013/0073 , G11C2213/15 , G11C2213/79 , G11C2213/82
摘要： Disclosed are methods, systems and devices for operation of non-volatile memory devices. In one aspect, a correlated electron switch (CES) device may be placed in any one of multiple memory states in a write operation. Limiting current between terminals of the non-volatile memory device during read operations may enable use of higher voltages for higher realized gain. Additionally, bipolar write operations for set and reset may enable an increased write window and enhanced durability for a CES device.
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公开(公告)号：US09972388B2
公开(公告)日：2018-05-15
申请号：US15291627
申请日：2016-10-12
申请人： ARM Ltd.
IPC分类号： G11C13/00
CPC分类号： G11C13/0069 , G11C13/0007 , G11C13/0028 , G11C13/0038 , G11C13/0097 , G11C16/20
摘要： Disclosed are methods, systems and devices for powering up devices including non-volatile memory elements in an array of non-volatile memory elements. In one aspect, during a sequence for powering up an integrated device, non-volatile memory elements may be isolated from voltage supplies to avoid in advertent changes of memory states stored in the non-volatile memory elements.
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公开(公告)号：US20180114574A1
公开(公告)日：2018-04-26
申请号：US15334187
申请日：2016-10-25
申请人： ARM Ltd.
发明人： Azeez Jennudin Bhavnagarwala , Lucian Shifren , Piyush Agarwal , Akshay Kumar , Robert Campbell Aitken
IPC分类号： G11C13/00
CPC分类号： G11C13/0069 , G11C13/0002 , G11C2013/0073 , G11C2213/15 , G11C2213/79 , G11C2213/82
摘要： Disclosed are methods, systems and devices for operation of non-volatile memory devices. In one aspect, a correlated electron switch (CES) device may be placed in any one of multiple memory states in a write operation. A plurality of bitcells may be connectable to a common source voltage during a two-phase operation to place individual bitcells in intended impedance states.
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公开(公告)号：US10269414B2
公开(公告)日：2019-04-23
申请号：US15590965
申请日：2017-05-09
申请人： ARM Ltd.
发明人： Piyush Agarwal , Shruti Aggarwal , Mudit Bhargava , Akshay Kumar
IPC分类号： G11C7/06 , G11C11/4097 , G11C7/18 , G06F12/0804 , G11C7/10 , G11C7/08 , G11C7/12 , G11C13/00
摘要： To sense an impedance state of one or more correlated electron switch elements, a bit-line may be precharged to a voltage level that is less than a precharge voltage level for a sense amplifier, and a bit-line may be discharged through one or more correlated electron switch elements. A bit-line may be buffered from a sense amplifier via an electronic switch device.
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公开(公告)号：US10148279B2
公开(公告)日：2018-12-04
申请号：US15859069
申请日：2017-12-29
申请人： ARM Ltd.
摘要： Subject matter disclosed herein may relate to correlated electron switch devices, and may relate more particularly to digital to analog conversion using correlated electron switch devices ces.
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公开(公告)号：US09871528B1
公开(公告)日：2018-01-16
申请号：US15364507
申请日：2016-11-30
申请人： ARM Ltd.
CPC分类号： H03M1/1071 , H01L45/04 , H01L45/146 , H03M1/1009 , H03M1/66
摘要： Subject matter disclosed herein may relate to correlated electron switch devices, and may relate more particularly to digital to analog conversion using correlated electron switch devices ces.
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公开(公告)号：US10431304B2
公开(公告)日：2019-10-01
申请号：US15936212
申请日：2018-03-26
申请人： ARM Ltd.
IPC分类号： G11C13/00
摘要： Disclosed are methods, systems and devices for operation of non-volatile memory devices. In one aspect, a correlated electron switch (CES) device may be placed in any one of multiple memory states in a write operation. Limiting current between terminals of the non-volatile memory device during read operations may enable use of higher voltages for higher realized gain. Additionally, bipolar write operations for set and reset may enable an increased write window and enhanced durability for a CES device.
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10.发明授权公开(公告)号：US10373680B2
公开(公告)日：2019-08-06
申请号：US15590987
申请日：2017-05-09
申请人： ARM Ltd.
摘要： Subject matter disclosed herein may relate to correlated electron switch elements and, more particularly, to controlling current through correlated electron switch elements during programming operations.
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