公开(公告)号：US09514934B2

公开(公告)日：2016-12-06

申请号：US14658000

申请日：2015-03-13

Applicant: ASM INTERNATIONAL, N.V.

Inventor： Raija H. Matero ,  Linda Lindroos ,  Hessel Sprey ,  Jan Willem Maes ,  David De Roest ,  Dieter Pierreux ,  Kees Van Der Jeugd ,  Lucia D'Urzo ,  Tom E. Blomberg

IPC: H01L21/302 ,  H01L21/02 ,  H01L21/033 ,  H01L21/311 ,  H01L21/28 ,  H01L29/51 ,  H01L21/22

CPC classification number: H01L21/0228 ,  C23F1/26 ,  H01L21/02175 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/2225 ,  H01L21/28194 ,  H01L21/31111 ,  H01L21/31122 ,  H01L29/513 ,  H01L29/517

Abstract: Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony halides, such as SbCl3, antimony alkylamines, and antimony alkoxides, such as Sb(OEt)3. The oxygen source may be, for example, ozone. In some embodiments the antimony oxide thin films are deposited in a batch reactor. The antimony oxide thin films may serve, for example, as etch stop layers or sacrificial layers.