公开(公告)号：US10699899B2

公开(公告)日：2020-06-30

申请号：US16105312

申请日：2018-08-20

Applicant: ASM International N.V.

Inventor： Raija H. Matero ,  Linda Lindroos ,  Hessel Sprey ,  Jan Willem Maes ,  David de Roest ,  Dieter Pierreux ,  Kees van der Jeugd ,  Lucia D'Urzo ,  Tom E. Blomberg

IPC: H01L21/02 ,  H01L21/033 ,  H01L21/311 ,  H01L29/51 ,  H01L21/28 ,  H01L21/22 ,  C23F1/26

Abstract: Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony halides, such as SbCl3, antimony alkylamines, and antimony alkoxides, such as Sb(OEt)3. The oxygen source may be, for example, ozone. In some embodiments the antimony oxide thin films are deposited in a batch reactor. The antimony oxide thin films may serve, for example, as etch stop layers or sacrificial layers.

公开(公告)号：US20190103266A1

公开(公告)日：2019-04-04

申请号：US16105312

申请日：2018-08-20

Applicant: ASM International N.V.

Inventor： Raija H. Matero ,  Linda Lindroos ,  Hessel Sprey ,  Jan Willem Maes ,  David de Roest ,  Dieter Pierreux ,  Kees van der Jeugd ,  Lucia D'Urzo ,  Tom E. Blomberg

IPC: H01L21/02 ,  H01L21/22 ,  H01L21/311 ,  H01L21/033

CPC classification number: H01L21/0228 ,  C23F1/26 ,  H01L21/02175 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/2225 ,  H01L21/28194 ,  H01L21/31111 ,  H01L21/31122 ,  H01L29/513 ,  H01L29/517

Abstract: Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony halides, such as SbCl3, antimony alkylamines, and antimony alkoxides, such as Sb(OEt)3. The oxygen source may be, for example, ozone. In some embodiments the antimony oxide thin films are deposited in a batch reactor. The antimony oxide thin films may serve, for example, as etch stop layers or sacrificial layers.

公开(公告)号：US20170140918A1

公开(公告)日：2017-05-18

申请号：US15358802

申请日：2016-11-22

Applicant: ASM International N.V.

Inventor： Raija H. Matero ,  Linda Lindroos ,  Hessel Sprey ,  Jan Willem Maes ,  David de Roest ,  Dieter Pierreux ,  Kees van der Jeugd ,  Lucia D'Urzo ,  Tom E. Blomberg

IPC: H01L21/02 ,  H01L29/51 ,  H01L21/22

CPC classification number: H01L21/0228 ,  C23F1/26 ,  H01L21/02175 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/2225 ,  H01L21/28194 ,  H01L21/31111 ,  H01L21/31122 ,  H01L29/513 ,  H01L29/517

Abstract: Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony halides, such as SbCl3, antimony alkylamines, and antimony alkoxides, such as Sb(OEt)3. The oxygen source may be, for example, ozone. In some embodiments the antimony oxide thin films are deposited in a batch reactor. The antimony oxide thin films may serve, for example, as etch stop layers or sacrificial layers.

公开(公告)号：US09514934B2

公开(公告)日：2016-12-06

申请号：US14658000

申请日：2015-03-13

Applicant: ASM INTERNATIONAL, N.V.

Inventor： Raija H. Matero ,  Linda Lindroos ,  Hessel Sprey ,  Jan Willem Maes ,  David De Roest ,  Dieter Pierreux ,  Kees Van Der Jeugd ,  Lucia D'Urzo ,  Tom E. Blomberg

IPC: H01L21/302 ,  H01L21/02 ,  H01L21/033 ,  H01L21/311 ,  H01L21/28 ,  H01L29/51 ,  H01L21/22

CPC classification number: H01L21/0228 ,  C23F1/26 ,  H01L21/02175 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/2225 ,  H01L21/28194 ,  H01L21/31111 ,  H01L21/31122 ,  H01L29/513 ,  H01L29/517

Abstract: Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony halides, such as SbCl3, antimony alkylamines, and antimony alkoxides, such as Sb(OEt)3. The oxygen source may be, for example, ozone. In some embodiments the antimony oxide thin films are deposited in a batch reactor. The antimony oxide thin films may serve, for example, as etch stop layers or sacrificial layers.

公开(公告)号：US08956939B2

公开(公告)日：2015-02-17

申请号：US13872932

申请日：2013-04-29

Applicant: ASM International N.V.

Inventor： Qi Xie ,  Vladimir Machkaoutsan ,  Jan Willem Maes ,  Michael Givens ,  Petri Raisanen

IPC: H01L21/00 ,  H01L45/00

CPC classification number: H01L45/1616 ,  H01L27/249 ,  H01L45/08 ,  H01L45/1226 ,  H01L45/146

Abstract: A method for forming a resistive random access memory (RRAM) device is disclosed. The method comprises forming a first electrode, forming a resistive switching oxide layer comprising a metal oxide by thermal atomic layer deposition (ALD) and forming a second electrode by thermal atomic layer deposition (ALD), where the resistive switching layer is interposed between the first electrode and the second electrode. Forming the resistive switching oxide may be performed without exposing a surface of the switching oxide layer to a surface-modifying plasma treatment after depositing the metal oxide.

Abstract translation: 公开了一种形成电阻随机存取存储器（RRAM）装置的方法。 该方法包括形成第一电极，通过热原子层沉积（ALD）形成包括金属氧化物的电阻式切换氧化物层，并通过热原子层沉积（ALD）形成第二电极，其中电阻式开关层介于第一 电极和第二电极。 可以在沉积金属氧化物之后，进行电阻式开关氧化物的形成而不使开关氧化物层的表面暴露于表面改性等离子体处理。

公开(公告)号：US10056249B2

公开(公告)日：2018-08-21

申请号：US15358802

申请日：2016-11-22

Applicant: ASM International N.V.

Inventor： Raija H. Matero ,  Linda Lindroos ,  Hessel Sprey ,  Jan Willem Maes ,  David de Roest ,  Dieter Pierreux ,  Kees van der Jeugd ,  Lucia D'Urzo ,  Tom E. Blomberg

IPC: H01L21/302 ,  H01L21/02 ,  H01L21/033 ,  H01L21/311 ,  H01L21/28 ,  H01L29/51 ,  H01L21/22 ,  C23F1/26

CPC classification number: H01L21/0228 ,  C23F1/26 ,  H01L21/02175 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/2225 ,  H01L21/28194 ,  H01L21/31111 ,  H01L21/31122 ,  H01L29/513 ,  H01L29/517

Abstract: Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony halides, such as SbCl3, antimony alkylamines, and antimony alkoxides, such as Sb(OEt)3. The oxygen source may be, for example, ozone. In some embodiments the antimony oxide thin films are deposited in a batch reactor. The antimony oxide thin films may serve, for example, as etch stop layers or sacrificial layers.

公开(公告)号：US11549177B2

公开(公告)日：2023-01-10

申请号：US16709108

申请日：2019-12-10

Applicant: ASM International N.V.

Inventor： Tom E. Blomberg ,  Eva E. Tois ,  Robert Huggare ,  Jan Willem Maes ,  Vladimir Machkaoutsan ,  Dieter Pierreux

IPC: C23C16/34 ,  C23C16/36 ,  C23C16/40 ,  C23C16/455

Abstract: Methods are disclosed herein for depositing a passivation layer comprising fluorine over a dielectric material that is sensitive to chlorine, bromine, and iodine. The passivation layer can protect the sensitive dielectric layer thereby enabling deposition using precursors comprising chlorine, bromine, and iodine over the passivation layer.

公开(公告)号：US20200181769A1

公开(公告)日：2020-06-11

申请号：US16709108

申请日：2019-12-10

Applicant: ASM International N.V.

Inventor： Tom E. Blomberg ,  Eva E. Tois ,  Robert Huggare ,  Jan Willem Maes ,  Vladimir Machkaoutsan ,  Dieter Pierreux

IPC: C23C16/34 ,  C23C16/455 ,  C23C16/40 ,  C23C16/36

Abstract: Methods are disclosed herein for depositing a passivation layer comprising fluorine over a dielectric material that is sensitive to chlorine, bromine, and iodine. The passivation layer can protect the sensitive dielectric layer thereby enabling deposition using precursors comprising chlorine, bromine, and iodine over the passivation layer.

公开(公告)号：US09006112B2

公开(公告)日：2015-04-14

申请号：US13649992

申请日：2012-10-11

Applicant: ASM International. N.V.

Inventor： Raija H. Matero ,  Linda Lindroos ,  Hessel Sprey ,  Jan Willem Maes ,  David de Roest ,  Dieter Pierreux ,  Kees van der Jeugd ,  Lucia D'Urzo ,  Tom E. Blomberg

IPC: H01L21/302 ,  H01L21/28 ,  H01L21/02 ,  H01L21/033 ,  H01L21/311 ,  H01L29/51

CPC classification number: H01L21/0228 ,  C23F1/26 ,  H01L21/02175 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/2225 ,  H01L21/28194 ,  H01L21/31111 ,  H01L21/31122 ,  H01L29/513 ,  H01L29/517

Abstract: Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony halides, such as SbCl3, antimony alkylamines, and antimony alkoxides, such as Sb(OEt)3. The oxygen source may be, for example, ozone. In some embodiments the antimony oxide thin films are deposited in a batch reactor. The antimony oxide thin films may serve, for example, as etch stop layers or sacrificial layers.

Abstract translation: 通过原子层沉积使用锑反应物和氧源沉积氧化锑薄膜。 锑反应物可以包括卤化锑，如SbCl 3，锑烷基胺和锑醇盐，如Sb（OEt）3。 氧源可以是例如臭氧。 在一些实施方案中，氧化锑薄膜沉积在间歇式反应器中。 氧化锑薄膜可以用作例如蚀刻停止层或牺牲层。

公开(公告)号：US20130095664A1

公开(公告)日：2013-04-18

申请号：US13649992

申请日：2012-10-11

Applicant: ASM International. N.V.

Inventor： Raija H. Matero ,  Linda Lindroos ,  Hessel Sprey ,  Jan Willem Maes ,  David de Roest ,  Dieter Pierreux ,  Kees van der Jeugd ,  Lucia D'Urzo ,  Tom E. Blomberg

IPC: H01L21/31 ,  H01L21/311

CPC classification number: H01L21/0228 ,  C23F1/26 ,  H01L21/02175 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/2225 ,  H01L21/28194 ,  H01L21/31111 ,  H01L21/31122 ,  H01L29/513 ,  H01L29/517

Abstract: Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony halides, such as SbCl3, antimony alkylamines, and antimony alkoxides, such as Sb(OEt)3. The oxygen source may be, for example, ozone. In some embodiments the antimony oxide thin films are deposited in a batch reactor. The antimony oxide thin films may serve, for example, as etch stop layers or sacrificial layers.