公开(公告)号：US10553440B2

公开(公告)日：2020-02-04

申请号：US15186950

申请日：2016-06-20

Applicant: ASM International N.V.

Inventor： Viljami J. Pore ,  Suvi P. Haukka ,  Tom E. Blomberg ,  Eva E. Tois

IPC: H01L21/28 ,  H01L29/45 ,  H01L29/66 ,  H01L29/78 ,  H01L21/285 ,  H01L21/321 ,  H01L21/768 ,  H01L21/3213 ,  H01L21/3215

Abstract: In one aspect, methods of silicidation and germanidation are provided. In some embodiments, methods for forming metal silicide can include forming a non-oxide interface, such as germanium or solid antimony, over exposed silicon regions of a substrate. Metal oxide is formed over the interface layer. Annealing and reducing causes metal from the metal oxide to react with the underlying silicon and form metal silicide. Additionally, metal germanide can be formed by reduction of metal oxide over germanium, whether or not any underlying silicon is also silicided. In other embodiments, nickel is deposited directly and an interface layer is not used. In another aspect, methods of depositing nickel thin films by vapor phase deposition processes are provided. In some embodiments, nickel thin films are deposited by ALD. Nickel thin films can be used directly in silicidation and germanidation processes.

公开(公告)号：US20160032489A1

公开(公告)日：2016-02-04

申请号：US14717919

申请日：2015-05-20

Applicant: ASM International N.V.

Inventor： Tom E. Blomberg

IPC: C30B29/32 ,  C30B29/24 ,  C30B25/18 ,  H01L21/02 ,  C30B1/04

CPC classification number: C30B29/32 ,  C30B1/02 ,  C30B1/04 ,  C30B25/18 ,  C30B25/186 ,  C30B29/24 ,  C30B29/68 ,  H01L21/02192 ,  H01L21/02194 ,  H01L21/02197 ,  H01L21/0228 ,  H01L21/02318 ,  Y10T428/31678

Abstract: Methods of forming a crystalline strontium titanate layer may include providing a substrate with a crystal enhancement surface (e.g., Pt), depositing strontium titanate by atomic layer deposition, and conducting a post-deposition anneal to crystallize the strontium titanate. Large single crystal domains may be formed, laterally extending greater distances than the thickness of the strontium titanate and demonstrating greater ordering than the underlying crystal enhancement surface provided to initiate ALD. Functional oxides, particularly perovskite complex oxides, can be heteroepitaxially deposited over the crystallized STO.

公开(公告)号：US11549177B2

公开(公告)日：2023-01-10

申请号：US16709108

申请日：2019-12-10

Applicant: ASM International N.V.

Inventor： Tom E. Blomberg ,  Eva E. Tois ,  Robert Huggare ,  Jan Willem Maes ,  Vladimir Machkaoutsan ,  Dieter Pierreux

IPC: C23C16/34 ,  C23C16/36 ,  C23C16/40 ,  C23C16/455

Abstract: Methods are disclosed herein for depositing a passivation layer comprising fluorine over a dielectric material that is sensitive to chlorine, bromine, and iodine. The passivation layer can protect the sensitive dielectric layer thereby enabling deposition using precursors comprising chlorine, bromine, and iodine over the passivation layer.

公开(公告)号：US09634106B2

公开(公告)日：2017-04-25

申请号：US14815633

申请日：2015-07-31

Applicant: ASM INTERNATIONAL N.V.

Inventor： Viljami J. Pore ,  Suvi P. Haukka ,  Tom E. Blomberg ,  Eva E. Tois

IPC: H01L29/66 ,  H01L29/78 ,  H01L21/285 ,  H01L21/324 ,  C23C16/40 ,  C23C16/06 ,  H01L29/45 ,  C23C16/455 ,  H01L21/3215 ,  H01L29/49

CPC classification number: H01L29/45 ,  C23C16/06 ,  C23C16/406 ,  C23C16/45527 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/3215 ,  H01L21/324 ,  H01L21/76843 ,  H01L21/76855 ,  H01L29/456 ,  H01L29/4933 ,  H01L29/665 ,  H01L29/66666 ,  H01L29/7827

Abstract: In one aspect, methods of silicidation and germanidation are provided. In some embodiments, methods for forming metal silicide can include forming a non-oxide interface, such as germanium or solid antimony, over exposed silicon regions of a substrate. Metal oxide is formed over the interface layer. Annealing and reducing causes metal from the metal oxide to react with the underlying silicon and form metal silicide. Additionally, metal germanide can be formed by reduction of metal oxide over germanium, whether or not any underlying silicon is also silicided. In other embodiments, nickel is deposited directly and an interface layer is not used. In another aspect, methods of depositing nickel thin films by vapor phase deposition processes are provided. In some embodiments, nickel thin films are deposited by ALD.

公开(公告)号：US20190081149A1

公开(公告)日：2019-03-14

申请号：US16040863

申请日：2018-07-20

Applicant: ASM INTERNATIONAL N.V.

Inventor： Viljami J. Pore ,  Suvi P. Haukka ,  Tom E. Blomberg ,  Eva E. Tois

IPC: H01L29/45 ,  H01L21/285 ,  H01L21/3215 ,  H01L29/78 ,  H01L29/66

Abstract: In one aspect, methods of silicidation and germanidation are provided. In some embodiments, methods for forming metal silicide can include forming a non-oxide interface, such as germanium or solid antimony, over exposed silicon regions of a substrate. Metal oxide is formed over the interface layer. Annealing and reducing causes metal from the metal oxide to react with the underlying silicon and form metal silicide. Additionally, metal germanide can be formed by reduction of metal oxide over germanium, whether or not any underlying silicon is also silicided. In other embodiments, nickel is deposited directly and an interface layer is not used. In another aspect, methods of depositing nickel thin films by vapor phase deposition processes are provided. In some embodiments, nickel thin films are deposited by ALD.

公开(公告)号：US10056249B2

公开(公告)日：2018-08-21

申请号：US15358802

申请日：2016-11-22

Applicant: ASM International N.V.

Inventor： Raija H. Matero ,  Linda Lindroos ,  Hessel Sprey ,  Jan Willem Maes ,  David de Roest ,  Dieter Pierreux ,  Kees van der Jeugd ,  Lucia D'Urzo ,  Tom E. Blomberg

IPC: H01L21/302 ,  H01L21/02 ,  H01L21/033 ,  H01L21/311 ,  H01L21/28 ,  H01L29/51 ,  H01L21/22 ,  C23F1/26

CPC classification number: H01L21/0228 ,  C23F1/26 ,  H01L21/02175 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/2225 ,  H01L21/28194 ,  H01L21/31111 ,  H01L21/31122 ,  H01L29/513 ,  H01L29/517

Abstract: Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony halides, such as SbCl3, antimony alkylamines, and antimony alkoxides, such as Sb(OEt)3. The oxygen source may be, for example, ozone. In some embodiments the antimony oxide thin films are deposited in a batch reactor. The antimony oxide thin films may serve, for example, as etch stop layers or sacrificial layers.

公开(公告)号：US10699899B2

公开(公告)日：2020-06-30

申请号：US16105312

申请日：2018-08-20

Applicant: ASM International N.V.

Inventor： Raija H. Matero ,  Linda Lindroos ,  Hessel Sprey ,  Jan Willem Maes ,  David de Roest ,  Dieter Pierreux ,  Kees van der Jeugd ,  Lucia D'Urzo ,  Tom E. Blomberg

IPC: H01L21/02 ,  H01L21/033 ,  H01L21/311 ,  H01L29/51 ,  H01L21/28 ,  H01L21/22 ,  C23F1/26

Abstract: Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony halides, such as SbCl3, antimony alkylamines, and antimony alkoxides, such as Sb(OEt)3. The oxygen source may be, for example, ozone. In some embodiments the antimony oxide thin films are deposited in a batch reactor. The antimony oxide thin films may serve, for example, as etch stop layers or sacrificial layers.

公开(公告)号：US20190103266A1

公开(公告)日：2019-04-04

申请号：US16105312

申请日：2018-08-20

Applicant: ASM International N.V.

Inventor： Raija H. Matero ,  Linda Lindroos ,  Hessel Sprey ,  Jan Willem Maes ,  David de Roest ,  Dieter Pierreux ,  Kees van der Jeugd ,  Lucia D'Urzo ,  Tom E. Blomberg

IPC: H01L21/02 ,  H01L21/22 ,  H01L21/311 ,  H01L21/033

CPC classification number: H01L21/0228 ,  C23F1/26 ,  H01L21/02175 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/2225 ,  H01L21/28194 ,  H01L21/31111 ,  H01L21/31122 ,  H01L29/513 ,  H01L29/517

Abstract: Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony halides, such as SbCl3, antimony alkylamines, and antimony alkoxides, such as Sb(OEt)3. The oxygen source may be, for example, ozone. In some embodiments the antimony oxide thin films are deposited in a batch reactor. The antimony oxide thin films may serve, for example, as etch stop layers or sacrificial layers.

公开(公告)号：US20170140918A1

公开(公告)日：2017-05-18

申请号：US15358802

申请日：2016-11-22

Applicant: ASM International N.V.

Inventor： Raija H. Matero ,  Linda Lindroos ,  Hessel Sprey ,  Jan Willem Maes ,  David de Roest ,  Dieter Pierreux ,  Kees van der Jeugd ,  Lucia D'Urzo ,  Tom E. Blomberg

IPC: H01L21/02 ,  H01L29/51 ,  H01L21/22

CPC classification number: H01L21/0228 ,  C23F1/26 ,  H01L21/02175 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/2225 ,  H01L21/28194 ,  H01L21/31111 ,  H01L21/31122 ,  H01L29/513 ,  H01L29/517

Abstract: Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony halides, such as SbCl3, antimony alkylamines, and antimony alkoxides, such as Sb(OEt)3. The oxygen source may be, for example, ozone. In some embodiments the antimony oxide thin films are deposited in a batch reactor. The antimony oxide thin films may serve, for example, as etch stop layers or sacrificial layers.

公开(公告)号：US09514934B2

公开(公告)日：2016-12-06

申请号：US14658000

申请日：2015-03-13

Applicant: ASM INTERNATIONAL, N.V.

Inventor： Raija H. Matero ,  Linda Lindroos ,  Hessel Sprey ,  Jan Willem Maes ,  David De Roest ,  Dieter Pierreux ,  Kees Van Der Jeugd ,  Lucia D'Urzo ,  Tom E. Blomberg

IPC: H01L21/302 ,  H01L21/02 ,  H01L21/033 ,  H01L21/311 ,  H01L21/28 ,  H01L29/51 ,  H01L21/22

CPC classification number: H01L21/0228 ,  C23F1/26 ,  H01L21/02175 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/2225 ,  H01L21/28194 ,  H01L21/31111 ,  H01L21/31122 ,  H01L29/513 ,  H01L29/517

Abstract: Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony halides, such as SbCl3, antimony alkylamines, and antimony alkoxides, such as Sb(OEt)3. The oxygen source may be, for example, ozone. In some embodiments the antimony oxide thin films are deposited in a batch reactor. The antimony oxide thin films may serve, for example, as etch stop layers or sacrificial layers.