-
公开(公告)号：US10344378B2
公开(公告)日：2019-07-09
申请号：US15599187
申请日：2017-05-18
Applicant: ASM International N.V.
Inventor： Timo Hatanpaa , Jaakko Niinisto , Mikko Ritala , Markku Leskela , Suvi Haukka
IPC: C01G25/02 , C23C16/40 , C23C16/455 , C01G23/07 , C01G27/02
Abstract: Methods are provided herein for forming transition metal oxide thin films, preferably Group IVB metal oxide thin films, by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures using metalorganic reactants. Metalorganic reactants comprising two ligands, at least one of which is a cycloheptatriene or cycloheptatrienyl (CHT) ligand are used in some embodiments. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications.
-
公开(公告)号：US09677173B2
公开(公告)日：2017-06-13
申请号：US15157698
申请日：2016-05-18
Applicant: ASM International N.V.
Inventor： Timo Hatanpaa , Jaakko Niinisto , Mikko Ritala , Markku Leskela , Suvi Haukka
IPC: C23C16/40 , C23C16/455 , C01G23/07 , C01G25/02 , C01G27/02
CPC classification number: C23C16/405 , C01G23/07 , C01G25/02 , C01G27/02 , C01P2006/40 , C23C16/45527 , C23C16/45536 , C23C16/45553
Abstract: Methods are provided herein for forming transition metal oxide thin films, preferably Group IVB metal oxide thin films, by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures using metalorganic reactants. Metalorganic reactants comprising two ligands, at least one of which is a cycloheptatriene or cycloheptatrienyl (CHT) ligand are used in some embodiments. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications.
-
3.发明申请PRECURSORS AND METHODS FOR ATOMIC LAYER DEPOSITION OF TRANSITION METAL OXIDES 审中-公开过渡金属氧化物原子层沉积的前兆和方法公开(公告)号：US20150191817A1
公开(公告)日：2015-07-09
申请号：US14629333
申请日：2015-02-23
Applicant: ASM International N.V.
Inventor： Timo Hatanpaa , Jaakko Niinisto , Mikko Ritala , Markku Leskela , Suvi Haukka
IPC: C23C16/40 , C23C16/455 , C01G25/02 , C01G23/07 , C01G27/02
CPC classification number: C23C16/405 , C01G23/07 , C01G25/02 , C01G27/02 , C01P2006/40 , C23C16/45527 , C23C16/45536 , C23C16/45553
Abstract: Methods are provided herein for forming transition metal oxide thin films, preferably Group IVB metal oxide thin films, by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures using metalorganic reactants. Metalorganic reactants comprising two ligands, at least one of which is a cycloheptatriene or cycloheptatrienyl (CHT) ligand are used in some embodiments. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications.
Abstract translation: 本文提供了通过原子层沉积形成过渡金属氧化物薄膜，优选IVB族金属氧化物薄膜的方法。 金属氧化物薄膜可以使用金属有机反应物在高温下沉积。 在一些实施方案中使用包含两种配体的金属有机反应物，其中至少一种是环庚三烯或环庚三烯（CHT）配体。 金属氧化物薄膜可以用作例如晶体管，闪光器件，电容器，集成电路和其它半导体应用中的电介质氧化物。
-
公开(公告)号：US11555242B2
公开(公告)日：2023-01-17
申请号：US16460139
申请日：2019-07-02
Applicant: ASM International N.V.
Inventor： Timo Hatanpaa , Jaakko Niinisto , Mikko Ritala , Markku Leskela , Suvi Haukka
Abstract: Methods are provided herein for forming transition metal oxide thin films, preferably Group IVB metal oxide thin films, by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures using metalorganic reactants. Metalorganic reactants comprising two ligands, at least one of which is a cycloheptatriene or cycloheptatrienyl (CHT) ligand are used in some embodiments. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications.
-
Patent Agency Ranking
公开(公告)号：US20170253966A1
公开(公告)日：2017-09-07
申请号：US15599187
申请日：2017-05-18
Applicant: ASM International N.V.
Inventor： Timo Hatanpaa , Jaakko Niinisto , Mikko Ritala , Markku Leskela , Suvi Haukka
IPC: C23C16/40 , C01G25/02 , C01G27/02 , C23C16/455 , C01G23/07
CPC classification number: C23C16/405 , C01G23/07 , C01G25/02 , C01G27/02 , C01P2006/40 , C23C16/45527 , C23C16/45536 , C23C16/45553
Abstract: Methods are provided herein for forming transition metal oxide thin films, preferably Group IVB metal oxide thin films, by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures using metalorganic reactants. Metalorganic reactants comprising two ligands, at least one of which is a cycloheptatriene or cycloheptatrienyl (CHT) ligand are used in some embodiments. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications.
-
公开(公告)号：US20190382887A1
公开(公告)日：2019-12-19
申请号：US16460139
申请日：2019-07-02
Applicant: ASM International N.V.
Inventor： Timo Hatanpaa , Jaakko Niinisto , Mikko Ritala , Markku Leskela , Suvi Haukka
IPC: C23C16/40 , C23C16/455 , C01G23/07 , C01G25/02 , C01G27/02
Abstract: Methods are provided herein for forming transition metal oxide thin films, preferably Group IVB metal oxide thin films, by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures using metalorganic reactants. Metalorganic reactants comprising two ligands, at least one of which is a cycloheptatriene or cycloheptatrienyl (CHT) ligand are used in some embodiments. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications.
-
公开(公告)号：US09646820B2
公开(公告)日：2017-05-09
申请号：US14570668
申请日：2014-12-15
Applicant: ASM INTERNATIONAL N.V.
Inventor： Viljami Pore , Mikko Ritala , Markku Leskela
CPC classification number: H01L21/0228 , C23C16/405 , C23C16/45531 , H01G4/1218 , H01G4/33 , H01L28/60 , H01L28/75
Abstract: The present disclosure relates to the deposition of conductive titanium oxide films by atomic layer deposition processes. Amorphous doped titanium oxide films are deposited by ALD processes comprising titanium oxide deposition cycles and dopant oxide deposition cycles and are subsequently annealed to produce a conductive crystalline anatase film. Doped titanium oxide films may also be deposited by first depositing a doped titanium nitride thin film by ALD processes comprising titanium nitride deposition cycles and dopant nitride deposition cycles and subsequently oxidizing the nitride film to form a doped titanium oxide film. The doped titanium oxide films may be used, for example, in capacitor structures.
-
公开(公告)号：US20160258054A1
公开(公告)日：2016-09-08
申请号：US15157698
申请日：2016-05-18
Applicant: ASM International N.V.
Inventor： Timo Hatanpaa , Jaakko Niinisto , Mikko Ritala , Markku Leskela , Suvi Haukka
IPC: C23C16/40 , C23C16/455
CPC classification number: C23C16/405 , C01G23/07 , C01G25/02 , C01G27/02 , C01P2006/40 , C23C16/45527 , C23C16/45536 , C23C16/45553
Abstract: Methods are provided herein for forming transition metal oxide thin films, preferably Group IVB metal oxide thin films, by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures using metalorganic reactants. Metalorganic reactants comprising two ligands, at least one of which is a cycloheptatriene or cycloheptatrienyl (CHT) ligand are used in some embodiments. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications.
-
9.发明授权Precursors and methods for atomic layer deposition of transition metal oxides 有权用于原子层沉积过渡金属氧化物的前体和方法公开(公告)号：US09365926B2
公开(公告)日：2016-06-14
申请号：US14629333
申请日：2015-02-23
Applicant: ASM International N.V.
Inventor： Timo Hatanpaa , Jaakko Niinisto , Mikko Ritala , Markku Leskela , Suvi Haukka
IPC: C23C16/40 , C23C16/455 , C01G23/07 , C01G25/02 , C01G27/02
CPC classification number: C23C16/405 , C01G23/07 , C01G25/02 , C01G27/02 , C01P2006/40 , C23C16/45527 , C23C16/45536 , C23C16/45553
Abstract: Methods are provided herein for forming transition metal oxide thin films, preferably Group IVB metal oxide thin films, by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures using metalorganic reactants. Metalorganic reactants comprising two ligands, at least one of which is a cycloheptatriene or cycloheptatrienyl (CHT) ligand are used in some embodiments. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications.
Abstract translation: 本文提供了通过原子层沉积形成过渡金属氧化物薄膜，优选IVB族金属氧化物薄膜的方法。 金属氧化物薄膜可以使用金属有机反应物在高温下沉积。 在一些实施方案中使用包含两种配体的金属有机反应物，其中至少一种是环庚三烯或环庚三烯（CHT）配体。 金属氧化物薄膜可以用作例如晶体管，闪光器件，电容器，集成电路和其它半导体应用中的电介质氧化物。
-
-
-
-
-
-
-
-
Search Results
9
records
(took 0.016 seconds)
