SUBSTRATE PROCESSING METHOD
    1.
    发明申请

    公开(公告)号:US20230110980A1

    公开(公告)日:2023-04-13

    申请号:US17962859

    申请日:2022-10-10

    Abstract: A substrate processing method capable of forming a film with an improved step coverage on a surface of a gap structure having a high aspect ratio includes: providing a gap structure having a first step and a second step portion; supplying gas including a source gas onto the gap structure; generating active species from the source gas; generating neutral molecules by neutralizing the active species, and moving the neutral molecules in a direction toward a lower surface of a recess extending between the first stepped portion and the second stepped portion; and exciting the neutral molecules moving in the direction toward the lower surface.

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