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公开(公告)号:US20230110980A1
公开(公告)日:2023-04-13
申请号:US17962859
申请日:2022-10-10
Applicant: ASM IP Holding B.V.
Inventor: DooHyun La , KyungEun Lee , HakJoon Lee , YoonKi Min , HaRim Kim , DongHyun Ko , Seongil Cho
IPC: C23C16/44 , C23C16/455 , C23C16/56 , C23C16/505
Abstract: A substrate processing method capable of forming a film with an improved step coverage on a surface of a gap structure having a high aspect ratio includes: providing a gap structure having a first step and a second step portion; supplying gas including a source gas onto the gap structure; generating active species from the source gas; generating neutral molecules by neutralizing the active species, and moving the neutral molecules in a direction toward a lower surface of a recess extending between the first stepped portion and the second stepped portion; and exciting the neutral molecules moving in the direction toward the lower surface.
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公开(公告)号:US20230323534A1
公开(公告)日:2023-10-12
申请号:US18205716
申请日:2023-06-05
Applicant: ASM IP Holding B.V.
Inventor: DooHyun La , HaRim Kim , YoonKi Min , KyungEun Lee , Zhenyu Jin , HakJoon Lee
CPC classification number: C23C16/45536 , H01L21/0228 , H01J37/32449 , H01J37/32082 , C23C16/401 , H01L21/02274 , H01L21/02211 , H01L21/02164 , H01L21/0217 , C23C16/4404 , C23C16/345 , H01J2237/332
Abstract: A substrate processing method capable of forming a film with an improved step coverage and/or improved and/or more uniform properties on a surface of a gap structure having a high aspect ratio is provided. An exemplary substrate processing method includes: providing a gap structure; supplying gas including a source gas onto the gap structure; generating active species from the source gas; generating neutral molecules by neutralizing the active species, and moving the neutral molecules in a direction toward a lower surface of a recess extending between the first stepped portion and the second stepped portion; and exciting the neutral molecules moving in the direction toward the lower surface.
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