公开(公告)号：US20240006161A1

公开(公告)日：2024-01-04

申请号：US18214255

申请日：2023-06-26

Applicant: ASM IP Holding B.V.

Inventor： HaeIn Kim ,  HakJoo Lee ,  KiKang Kim ,  YongWoong Jeong ,  YoungMin Kim

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/32266 ,  H01J37/32853 ,  H01J2237/334 ,  H01J2237/327

Abstract: A substrate processing method capable of preventing a damage to a reactor and a lower film includes: supplying a substrate having a pattern structure; forming a layer on the pattern structure; generating active species by applying plasma on the substrate; and selectively etching a layer on the pattern structure generated by the active species by performing isotropic etching on the layer, wherein the applying of the plasma includes: increasing a density of the active species; and increasing a mobility of the active species.