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公开(公告)号：US11840761B2
公开(公告)日：2023-12-12
申请号：US17109039
申请日：2020-12-01
Applicant: ASM IP Holding B.V.
Inventor： HyungChul Moon
IPC: C23C16/455 , C23C16/52
CPC classification number: C23C16/45572 , C23C16/52
Abstract: Provided is a cooling device capable of controlling the temperature of an upper portion of a reactor, particularly, a gas supply device, for example, a shower head, by using a vortex tube. The cooling device may supply a cooling gas of a temperature lower than the temperature of the gas supply device heated to a high temperature, thereby easily controlling the temperature of the gas supply device.
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公开(公告)号：US11646184B2
公开(公告)日：2023-05-09
申请号：US17102419
申请日：2020-11-23
Applicant: ASM IP Holding B.V.
Inventor： HyungChul Moon , WonKi Jeong
CPC classification number: H01J37/32834 , C23C16/4412 , H01J37/32568 , H01J37/32715 , H01J2237/332
Abstract: A substrate processing apparatus capable of minimizing the effect of a filling gas in a lower space on the processing of a substrate includes: a substrate supporting unit; a processing unit on the substrate supporting unit; and an exhaust unit connected to a reaction space between the substrate supporting unit and the processing unit, wherein a first gas in the reaction space and a second gas in a lower space below the substrate supporting unit meet each other outside the reaction space.
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Patent Agency Ranking
公开(公告)号：US20210172064A1
公开(公告)日：2021-06-10
申请号：US17109039
申请日：2020-12-01
Applicant: ASM IP Holding B.V.
Inventor： HyungChul Moon
IPC: C23C16/455 , C23C16/52
Abstract: Provided is a cooling device capable of controlling the temperature of an upper portion of a reactor, particularly, a gas supply device, for example, a shower head, by using a vortex tube. The cooling device may supply a cooling gas of a temperature lower than the temperature of the gas supply device heated to a high temperature, thereby easily controlling the temperature of the gas supply device.
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公开(公告)号：US11923181B2
公开(公告)日：2024-03-05
申请号：US17102416
申请日：2020-11-23
Applicant: ASM IP Holding B.V.
Inventor： HyungChul Moon , WonKi Jeong
CPC classification number: H01J37/32834 , C23C16/4412 , H01J37/32449 , H01J37/32642
Abstract: A substrate processing apparatus capable of minimizing the effect of a filling gas in a lower space on the processing of a substrate includes: a substrate supporting unit; at least one ring surrounding the substrate supporting unit; a processing unit on the substrate supporting unit; and an exhaust unit connected to a reaction space between the substrate supporting unit and the processing unit, wherein a first gas in the reaction space is transmitted to the exhaust unit through a first channel, a second gas in a lower space below the substrate supporting unit is transmitted to the exhaust unit through a second channel, and the first channel and the second channel are separated by the at least one ring.
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公开(公告)号：US20220293398A1
公开(公告)日：2022-09-15
申请号：US17689392
申请日：2022-03-08
Applicant: ASM IP Holding B.V.
Inventor： WonKi Jeong , HyungChul Moon , GeunHwi Kim , JuIll Lee , DaeYoun Kim
IPC: H01J37/32 , H01L21/263
Abstract: A substrate processing apparatus includes one or more reactors, which physically prevent a process gas in a reaction space from penetrating into a space other than the reaction space. Furthermore, provided is a substrate processing apparatus capable of minimizing the occurrence of parasitic plasma in a space other than a reaction space.
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公开(公告)号：US20210166925A1
公开(公告)日：2021-06-03
申请号：US17102419
申请日：2020-11-23
Applicant: ASM IP Holding B.V.
Inventor： HyungChul Moon , WonKi Jeong
Abstract: A substrate processing apparatus capable of minimizing the effect of a filling gas in a lower space on the processing of a substrate includes: a substrate supporting unit; a processing unit on the substrate supporting unit; and an exhaust unit connected to a reaction space between the substrate supporting unit and the processing unit, wherein a first gas in the reaction space and a second gas in a lower space below the substrate supporting unit meet each other outside the reaction space.
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公开(公告)号：US20210166924A1
公开(公告)日：2021-06-03
申请号：US17102416
申请日：2020-11-23
Applicant: ASM IP Holding B.V.
Inventor： HyungChul Moon , WonKi Jeong
IPC: H01J37/32
Abstract: A substrate processing apparatus capable of minimizing the effect of a filling gas in a lower space on the processing of a substrate includes: a substrate supporting unit; at least one ring surrounding the substrate supporting unit; a processing unit on the substrate supporting unit; and an exhaust unit connected to a reaction space between the substrate supporting unit and the processing unit, wherein a first gas in the reaction space is transmitted to the exhaust unit through a first channel, a second gas in a lower space below the substrate supporting unit is transmitted to the exhaust unit through a second channel, and the first channel and the second channel are separated by the at least one ring.
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