公开(公告)号：US20240105479A1

公开(公告)日：2024-03-28

申请号：US18371227

申请日：2023-09-21

Applicant: ASM IP Holding B.V.

Inventor： WonKi Jeong ,  DaeYoun Kim

IPC: H01L21/67 ,  H01J37/32

CPC classification number: H01L21/67248 ,  H01J37/32357 ,  H01J37/32522 ,  H01J37/32862 ,  H01L21/67017 ,  H01J2237/002

Abstract: A substrate processing apparatus may be presented. The apparatus comprising a substrate reaction chamber configured to hold and process a substrate, a remote plasma unit for generating a radical gas to clean the substrate reaction chamber, a cooling unit, the cooling unit comprising: a tank configured to store water for cooling, a fan configured to generate an air flow, a plurality of fins placed in front of the fan, a plurality of cooling pipes configured to circulate the water from the tank and positioned to pass through in front of the fan, wherein the water passing through the cooling pipes cools down the air flow generated by the fan.

公开(公告)号：US20210035786A1

公开(公告)日：2021-02-04

申请号：US16938868

申请日：2020-07-24

Applicant: ASM IP Holding B.V.

Inventor： WonKi Jeong ,  JuIll Lee ,  HaSeok Jang

IPC: H01J37/32 ,  H01L21/67 ,  C23C16/44 ,  C23C16/50

Abstract: A substrate processing apparatus having an improved exhaust structure includes a reaction space formed between a processing unit and a substrate support unit, an exhaust unit surrounding the reaction space, an exhaust port with a channel inside, a partition wall with an exhaust line inside, wherein the channel of the exhaust port connects the exhaust unit and the exhaust line.

公开(公告)号：US11823876B2

公开(公告)日：2023-11-21

申请号：US17013386

申请日：2020-09-04

Applicant: ASM IP Holding B.V.

Inventor： ChangMin Lee ,  WonKi Jeong

IPC: H01J37/32 ,  C23C16/44

CPC classification number: H01J37/32834 ,  C23C16/4412 ,  H01J37/32449 ,  H01J37/32642 ,  H01J37/32669

Abstract: A substrate processing apparatus capable of processing a thin film to have improved quality through uniform exhaustion includes: a substrate supporting unit; a processing unit on the substrate supporting unit; an exhaust unit connected to a reaction space between the substrate supporting unit and the processing unit; an exhaust port connected to at least a portion of the exhaust unit; and a flow control unit disposed in an exhaust channel from a space inside the exhaust unit to the exhaust port.

公开(公告)号：US11646184B2

公开(公告)日：2023-05-09

申请号：US17102419

申请日：2020-11-23

Applicant: ASM IP Holding B.V.

Inventor： HyungChul Moon ,  WonKi Jeong

IPC: H01J37/30 ,  H01J37/32 ,  C23C16/44

CPC classification number: H01J37/32834 ,  C23C16/4412 ,  H01J37/32568 ,  H01J37/32715 ,  H01J2237/332

Abstract: A substrate processing apparatus capable of minimizing the effect of a filling gas in a lower space on the processing of a substrate includes: a substrate supporting unit; a processing unit on the substrate supporting unit; and an exhaust unit connected to a reaction space between the substrate supporting unit and the processing unit, wherein a first gas in the reaction space and a second gas in a lower space below the substrate supporting unit meet each other outside the reaction space.

公开(公告)号：US20240153746A1

公开(公告)日：2024-05-09

申请号：US18413728

申请日：2024-01-16

Applicant: ASM IP Holding B.V.

Inventor： WonKi Jeong ,  Yonjong Jeon ,  DongJun Park

IPC: H01J37/32

CPC classification number: H01J37/32513 ,  H01J37/3244

Abstract: A substrate processing apparatus having a simplified exhaust structure includes: a substrate supporting unit configured to support a substrate; a first lid on the substrate supporting unit, the first lid including at least one processing unit; a second lid under the first lid, the second lid including a partition wall; and a support arranged under the first lid and the second lid and including an opening and a seating portion on the opening, wherein the second lid is on the seating portion of the support.

公开(公告)号：US11443926B2

公开(公告)日：2022-09-13

申请号：US16936343

申请日：2020-07-22

Applicant: ASM IP Holding B.V.

Inventor： WonKi Jeong ,  JuIll Lee ,  HaSeok Jang

IPC: H01J37/32 ,  C23C16/44 ,  H01L21/67

Abstract: A substrate processing apparatus having an improved exhaust structure includes a grounded conductive extension portion configured to prevent generation of parasitic plasma in an exhaust space connected to a reaction space. The substrate processing apparatus prevents generation of parasitic plasma in an area, such as the reaction space, other than the reaction space. Thus, power loss may be prevented and a stable plasma process may be achieved.

公开(公告)号：US20210074527A1

公开(公告)日：2021-03-11

申请号：US17013386

申请日：2020-09-04

Applicant: ASM IP Holding B.V.

Inventor： ChangMin Lee ,  WonKi Jeong

IPC: H01J37/32

Abstract: A substrate processing apparatus capable of processing a thin film to have improved quality through uniform exhaustion includes: a substrate supporting unit; a processing unit on the substrate supporting unit; an exhaust unit connected to a reaction space between the substrate supporting unit and the processing unit; an exhaust port connected to at least a portion of the exhaust unit; and a flow control unit disposed in an exhaust channel from a space inside the exhaust unit to the exhaust port.

公开(公告)号：US11923181B2

公开(公告)日：2024-03-05

申请号：US17102416

申请日：2020-11-23

Applicant: ASM IP Holding B.V.

Inventor： HyungChul Moon ,  WonKi Jeong

IPC: H01J37/32 ,  C23C16/44

CPC classification number: H01J37/32834 ,  C23C16/4412 ,  H01J37/32449 ,  H01J37/32642

Abstract: A substrate processing apparatus capable of minimizing the effect of a filling gas in a lower space on the processing of a substrate includes: a substrate supporting unit; at least one ring surrounding the substrate supporting unit; a processing unit on the substrate supporting unit; and an exhaust unit connected to a reaction space between the substrate supporting unit and the processing unit, wherein a first gas in the reaction space is transmitted to the exhaust unit through a first channel, a second gas in a lower space below the substrate supporting unit is transmitted to the exhaust unit through a second channel, and the first channel and the second channel are separated by the at least one ring.

公开(公告)号：US20220293398A1

公开(公告)日：2022-09-15

申请号：US17689392

申请日：2022-03-08

Applicant: ASM IP Holding B.V.

Inventor： WonKi Jeong ,  HyungChul Moon ,  GeunHwi Kim ,  JuIll Lee ,  DaeYoun Kim

IPC: H01J37/32 ,  H01L21/263

Abstract: A substrate processing apparatus includes one or more reactors, which physically prevent a process gas in a reaction space from penetrating into a space other than the reaction space. Furthermore, provided is a substrate processing apparatus capable of minimizing the occurrence of parasitic plasma in a space other than a reaction space.

公开(公告)号：US11430640B2

公开(公告)日：2022-08-30

申请号：US16938868

申请日：2020-07-24

Applicant: ASM IP Holding B.V.

Inventor： WonKi Jeong ,  JuIll Lee ,  HaSeok Jang

IPC: C23C16/40 ,  H01J37/32 ,  H01L21/67 ,  C23C16/44 ,  C23C16/50

Abstract: A substrate processing apparatus having an improved exhaust structure includes a reaction space formed between a processing unit and a substrate support unit, an exhaust unit surrounding the reaction space, an exhaust port with a channel inside, a partition wall with an exhaust line inside, wherein the channel of the exhaust port connects the exhaust unit and the exhaust line.