Thin film deposition apparatus
    1.
    发明授权

    公开(公告)号:US10822695B2

    公开(公告)日:2020-11-03

    申请号:US16834283

    申请日:2020-03-30

    Abstract: A reaction chamber includes a reactor wall, a susceptor contacting the reactor wall to define a reaction space and a gas flow control device and a showerhead member stacked between the reactor wall and the susceptor. The showerhead member includes a gas channel and a showerhead. Penetration holes are formed through a protruding lateral portion of the gas flow control device, and the reactor wall and a lateral portion of the showerhead member are spaced apart from each other to form a gas discharge path. Gas remaining in the gas discharge path is discharged through the penetration holes and a gas outlet formed in an upper portion of the reactor wall. Because of the reaction space and the gas discharge path, unnecessary regions are removed to rapidly change gases from one to another, and thus atomic layer deposition may be performed with high efficiency and productivity.

    Thin film deposition apparatus
    2.
    发明授权

    公开(公告)号:US10662525B2

    公开(公告)日:2020-05-26

    申请号:US15202468

    申请日:2016-07-05

    Abstract: A reaction chamber includes a reactor wall, a susceptor contacting the reactor wall to define a reaction space and a gas flow control device and a showerhead member stacked between the reactor wall and the susceptor. The showerhead member includes a gas channel and a showerhead. Penetration holes are formed through a protruding lateral portion of the gas flow control device, and the reactor wall and a lateral portion of the showerhead member are spaced apart from each other to form a gas discharge path. Gas remaining in the gas discharge path is discharged through the penetration holes and a gas outlet formed in an upper portion of the reactor wall. The reaction chamber provides a reaction space and the gas discharge path from which unnecessary regions are removed to rapidly change gases from one to another, and thus atomic layer deposition may be performed with high efficiency and productivity.

    THIN FILM DEPOSITION APPARATUS
    4.
    发明申请
    THIN FILM DEPOSITION APPARATUS 审中-公开
    薄膜沉积装置

    公开(公告)号:US20170009347A1

    公开(公告)日:2017-01-12

    申请号:US15202468

    申请日:2016-07-05

    Abstract: A reaction chamber includes a reactor wall, a susceptor contacting the reactor wall to define a reaction space and a gas flow control device and a showerhead member stacked between the reactor wall and the susceptor. The showerhead member includes a gas channel and a showerhead. Penetration holes are formed through a protruding lateral portion of the gas flow control device, and the reactor wall and a lateral portion of the showerhead member are spaced apart from each other to form a gas discharge path. Gas remaining in the gas discharge path is discharged through the penetration holes and a gas outlet formed in an upper portion of the reactor wall. The reaction chamber provides a reaction space and the gas discharge path from which unnecessary regions are removed to rapidly change gases from one to another, and thus atomic layer deposition may be performed with high efficiency and productivity.

    Abstract translation: 反应室包括反应器壁,与反应器壁接触以限定反应空间的基座和气体流量控制装置以及堆叠在反应器壁和基座之间的喷头构件。 喷头构件包括气体通道和喷头。 渗透孔通过气体流量控制装置的突出侧面部分形成,并且反应器壁和喷头构件的侧部彼此间隔开以形成气体排出路径。 气体排出路径中残留的气体通过贯通孔排出,形成在反应器壁的上部的气体出口。 反应室提供反应空间和气体排出路径,从其中除去不需要的区域以迅速地将气体从一个换成另一个,因此可以以高效率和高生产率进行原子层沉积。

Patent Agency Ranking