公开(公告)号：US11069510B2

公开(公告)日：2021-07-20

申请号：US16116708

申请日：2018-08-29

Applicant: ASM IP Holding B.V.

Inventor： Ki Chul Um ,  Hyun Soo Jang ,  Jeong Ho Lee ,  Yong Gyu Han

IPC: H01J37/32 ,  C23C16/509

Abstract: A plasma supply unit includes a first conductive portion, a second conductive portion having at least a part extending to overlap the first conductive portion, and a ground shield located between the first conductive portion and the second conductive portion, and a substrate processing apparatus including the plasma supply unit.

公开(公告)号：US10738381B2

公开(公告)日：2020-08-11

申请号：US15232603

申请日：2016-08-09

Applicant: ASM IP Holding B.V.

Inventor： Hyun Soo Jang ,  Jeong Ho Lee ,  Woo Chan Kim ,  Sung Hoon Jun ,  Jong Won Shon

IPC: C23C16/44 ,  C30B25/12 ,  C23C16/458

Abstract: Disclosed are a substrate holder and a semiconductor manufacturing apparatus including the substrate holder. The substrate holder provides a reaction region by making face-sealing contact with a reactor wall. The substrate holder has an elastic behavior when pressure is applied thereto while the substrate holder makes face-sealing contact with the reactor wall. The semiconductor manufacturing apparatus includes the substrate holder and a gas supply unit configured to supply gas to the reaction region provided by the reactor wall and the substrate holder.

公开(公告)号：US20220033968A1

公开(公告)日：2022-02-03

申请号：US17145333

申请日：2021-01-09

Applicant: ASM IP Holding B.V.

Inventor： Young Hoon Kim ,  Yong Gyu Han ,  Dae Youn Kim ,  Hyun Soo Jang ,  Jeong Ho Lee

IPC: C23C16/455 ,  C23C16/509 ,  C23C16/52 ,  H01J37/32 ,  H01L21/02 ,  H01L21/687

Abstract: A substrate processing apparatus having an improved film processing uniformity is provided. The substrate processing apparatus includes a partition configured to provide a gas supply channel and a gas supply unit connected to the gas supply channel. A gas flow channel communicating with the gas supply channel is formed in the gas supply unit. A first through-hole is formed to penetrate through at least a part of the partition. A second through-hole is formed to penetrate through at least a part of the gas supply unit. The first through-hole communicates with the gas flow channel via the second through-hole. The second through-hole is arranged between a center and an edge of the gas flow channel, and is arranged spaced apart from the edge.

公开(公告)号：US10822695B2

公开(公告)日：2020-11-03

申请号：US16834283

申请日：2020-03-30

Applicant: ASM IP Holding B.V.

Inventor： Hyun Soo Jang ,  Dae Youn Kim ,  Jeong Ho Lee ,  Young Hoon Kim ,  Seung Seob Lee ,  Woo Chan Kim

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/509 ,  H01L21/67

Abstract: A reaction chamber includes a reactor wall, a susceptor contacting the reactor wall to define a reaction space and a gas flow control device and a showerhead member stacked between the reactor wall and the susceptor. The showerhead member includes a gas channel and a showerhead. Penetration holes are formed through a protruding lateral portion of the gas flow control device, and the reactor wall and a lateral portion of the showerhead member are spaced apart from each other to form a gas discharge path. Gas remaining in the gas discharge path is discharged through the penetration holes and a gas outlet formed in an upper portion of the reactor wall. Because of the reaction space and the gas discharge path, unnecessary regions are removed to rapidly change gases from one to another, and thus atomic layer deposition may be performed with high efficiency and productivity.

公开(公告)号：US10662525B2

公开(公告)日：2020-05-26

申请号：US15202468

申请日：2016-07-05

Applicant: ASM IP Holding B.V.

Inventor： Hyun Soo Jang ,  Dae Youn Kim ,  Jeong Ho Lee ,  Young Hoon Kim ,  Seung Seob Lee ,  Woo Chan Kim

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/509 ,  H01L21/67

Abstract: A reaction chamber includes a reactor wall, a susceptor contacting the reactor wall to define a reaction space and a gas flow control device and a showerhead member stacked between the reactor wall and the susceptor. The showerhead member includes a gas channel and a showerhead. Penetration holes are formed through a protruding lateral portion of the gas flow control device, and the reactor wall and a lateral portion of the showerhead member are spaced apart from each other to form a gas discharge path. Gas remaining in the gas discharge path is discharged through the penetration holes and a gas outlet formed in an upper portion of the reactor wall. The reaction chamber provides a reaction space and the gas discharge path from which unnecessary regions are removed to rapidly change gases from one to another, and thus atomic layer deposition may be performed with high efficiency and productivity.

公开(公告)号：US10190214B2

公开(公告)日：2019-01-29

申请号：US15208114

申请日：2016-07-12

Applicant: ASM IP Holding B.V.

Inventor： Jong Won Shon ,  Dae Youn Kim ,  Sang Don Lee ,  Hyun Soo Jang

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/509 ,  H01J37/32

Abstract: A deposition apparatus includes: a substrate support having a main surface on which a substrate is placed; a body disposed on the main surface and including a hollow portion having an exposed upper portion; a plasma electrode unit provided at a inner circumferential surface of the body to separate the hollow portion into an upper space and a lower space; and a gas supply unit supplying process gas to the plasma electrode unit, wherein a gas exhaust channel extending from the lower space to an exhaust outlet provided at a top of the body is formed in the body.

公开(公告)号：US20180171477A1

公开(公告)日：2018-06-21

申请号：US15835352

申请日：2017-12-07

Applicant: ASM IP Holding B.V.

Inventor： Young Hoon Kim ,  Yong Gyu Han ,  Dae Youn Kim ,  Hyun Soo Jang ,  Jeong Ho Lee

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/52

CPC classification number: C23C16/45527 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/458 ,  C23C16/52 ,  H01J37/3244 ,  H01J37/32834

Abstract: A substrate processing apparatus having improved uniformity and speed of reaction is provided. A substrate processing apparatus includes a body portion comprising a discharge path, a gas supply unit connected to the body portion, a first partition extending from the body portion, a second partition extending from the body portion and arranged between the gas supply unit and the first partition, and a substrate support unit configured to have surface-sealing with the first partition, wherein a first region between the first partition and the second partition and a second region between the gas supply unit and the second partition are connected to the discharge path.

公开(公告)号：USD796458S1

公开(公告)日：2017-09-05

申请号：US29558852

申请日：2016-03-22

Applicant: ASM IP Holding B.V.

Designer： Hyun Soo Jang ,  Jeong Ho Lee ,  Young Hoon Kim ,  Young Hyo Jeon

公开(公告)号：USD785578S1

公开(公告)日：2017-05-02

申请号：US29558827

申请日：2016-03-22

Applicant: ASM IP Holding B.V.

Designer： Woo Chan Kim ,  Jeong Ho Lee ,  Hyun Soo Jang ,  Jong Su Kim

公开(公告)号：US20170114460A1

公开(公告)日：2017-04-27

申请号：US15087736

申请日：2016-03-31

Applicant: ASM IP Holding B.V.

Inventor： Dae Youn Kim ,  Hie Chul Kim ,  Hyun Soo Jang

IPC: C23C16/455 ,  C23C16/50 ,  H01L21/02

CPC classification number: C23C16/45544 ,  C23C16/50 ,  C23C16/5096 ,  H01J37/3244 ,  H01J37/32513 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32899 ,  H01L21/02164 ,  H01L21/02274

Abstract: Provided is a semiconductor manufacturing system having an increased process window for stably and flexibly performing a deposition process. The semiconductor manufacturing system includes a gas supply device functioning as a first electrode and including a plurality of injection holes, a reactor wall connected to the gas supply device, and a substrate accommodating device functioning as a second electrode, the substrate accommodating device and the reactor wall being configured to be sealed together via face sealing. A reaction gas supplied from the gas supply device toward the substrate accommodating device is discharged to the outside through a gas discharge path between the gas supply device and the reactor wall. The first electrode includes a protruded electrode adjacent to an edge of the gas supply device.