公开(公告)号：US10738381B2

公开(公告)日：2020-08-11

申请号：US15232603

申请日：2016-08-09

Applicant: ASM IP Holding B.V.

Inventor： Hyun Soo Jang ,  Jeong Ho Lee ,  Woo Chan Kim ,  Sung Hoon Jun ,  Jong Won Shon

IPC: C23C16/44 ,  C30B25/12 ,  C23C16/458

Abstract: Disclosed are a substrate holder and a semiconductor manufacturing apparatus including the substrate holder. The substrate holder provides a reaction region by making face-sealing contact with a reactor wall. The substrate holder has an elastic behavior when pressure is applied thereto while the substrate holder makes face-sealing contact with the reactor wall. The semiconductor manufacturing apparatus includes the substrate holder and a gas supply unit configured to supply gas to the reaction region provided by the reactor wall and the substrate holder.

公开(公告)号：US20170044666A1

公开(公告)日：2017-02-16

申请号：US15232603

申请日：2016-08-09

Applicant: ASM IP Holding B.V.

Inventor： Hyun Soo Jang ,  Jeong Ho Kee ,  Woo Chan Kim ,  Sung Hoon Jun ,  Jong Won Shon

IPC: C23C16/458 ,  C23C16/455

Abstract: Disclosed are a substrate holder and a semiconductor manufacturing apparatus including the substrate holder. The substrate holder provides a reaction region by making face-sealing contact with a reactor wall. The substrate holder has an elastic behavior when pressure is applied thereto while the substrate holder makes face-sealing contact with the reactor wall. The semiconductor manufacturing apparatus includes the substrate holder and a gas supply unit configured to supply gas to the reaction region provided by the reactor wall and the substrate holder.

Abstract translation: 公开了一种衬底保持器和包括衬底保持器的半导体制造设备。 衬底保持器通过与反应器壁进行面密封接触来提供反应区域。 当衬底保持器与反应器壁进行面密封接触时，衬底保持器具有施加压力的弹性。 半导体制造装置包括衬底保持器和气体供给单元，该气体供给单元构造成将气体供应到由反应器壁和衬底保持器提供的反应区域。

公开(公告)号：US20170009347A1

公开(公告)日：2017-01-12

申请号：US15202468

申请日：2016-07-05

Applicant: ASM IP Holding B.V.

Inventor： Hyun Soo Jang ,  Dae Youn Kim ,  Jeong Ho Lee ,  Young Hoon Kim ,  Seung Seob Lee ,  Woo Chan Kim

IPC: C23C16/505

Abstract: A reaction chamber includes a reactor wall, a susceptor contacting the reactor wall to define a reaction space and a gas flow control device and a showerhead member stacked between the reactor wall and the susceptor. The showerhead member includes a gas channel and a showerhead. Penetration holes are formed through a protruding lateral portion of the gas flow control device, and the reactor wall and a lateral portion of the showerhead member are spaced apart from each other to form a gas discharge path. Gas remaining in the gas discharge path is discharged through the penetration holes and a gas outlet formed in an upper portion of the reactor wall. The reaction chamber provides a reaction space and the gas discharge path from which unnecessary regions are removed to rapidly change gases from one to another, and thus atomic layer deposition may be performed with high efficiency and productivity.

Abstract translation: 反应室包括反应器壁，与反应器壁接触以限定反应空间的基座和气体流量控制装置以及堆叠在反应器壁和基座之间的喷头构件。 喷头构件包括气体通道和喷头。 渗透孔通过气体流量控制装置的突出侧面部分形成，并且反应器壁和喷头构件的侧部彼此间隔开以形成气体排出路径。 气体排出路径中残留的气体通过贯通孔排出，形成在反应器壁的上部的气体出口。 反应室提供反应空间和气体排出路径，从其中除去不需要的区域以迅速地将气体从一个换成另一个，因此可以以高效率和高生产率进行原子层沉积。

公开(公告)号：US10822695B2

公开(公告)日：2020-11-03

申请号：US16834283

申请日：2020-03-30

Applicant: ASM IP Holding B.V.

Inventor： Hyun Soo Jang ,  Dae Youn Kim ,  Jeong Ho Lee ,  Young Hoon Kim ,  Seung Seob Lee ,  Woo Chan Kim

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/509 ,  H01L21/67

Abstract: A reaction chamber includes a reactor wall, a susceptor contacting the reactor wall to define a reaction space and a gas flow control device and a showerhead member stacked between the reactor wall and the susceptor. The showerhead member includes a gas channel and a showerhead. Penetration holes are formed through a protruding lateral portion of the gas flow control device, and the reactor wall and a lateral portion of the showerhead member are spaced apart from each other to form a gas discharge path. Gas remaining in the gas discharge path is discharged through the penetration holes and a gas outlet formed in an upper portion of the reactor wall. Because of the reaction space and the gas discharge path, unnecessary regions are removed to rapidly change gases from one to another, and thus atomic layer deposition may be performed with high efficiency and productivity.

公开(公告)号：US10662525B2

公开(公告)日：2020-05-26

申请号：US15202468

申请日：2016-07-05

Applicant: ASM IP Holding B.V.

Inventor： Hyun Soo Jang ,  Dae Youn Kim ,  Jeong Ho Lee ,  Young Hoon Kim ,  Seung Seob Lee ,  Woo Chan Kim

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/509 ,  H01L21/67

Abstract: A reaction chamber includes a reactor wall, a susceptor contacting the reactor wall to define a reaction space and a gas flow control device and a showerhead member stacked between the reactor wall and the susceptor. The showerhead member includes a gas channel and a showerhead. Penetration holes are formed through a protruding lateral portion of the gas flow control device, and the reactor wall and a lateral portion of the showerhead member are spaced apart from each other to form a gas discharge path. Gas remaining in the gas discharge path is discharged through the penetration holes and a gas outlet formed in an upper portion of the reactor wall. The reaction chamber provides a reaction space and the gas discharge path from which unnecessary regions are removed to rapidly change gases from one to another, and thus atomic layer deposition may be performed with high efficiency and productivity.

公开(公告)号：USD785578S1

公开(公告)日：2017-05-02

申请号：US29558827

申请日：2016-03-22

Applicant: ASM IP Holding B.V.

Designer： Woo Chan Kim ,  Jeong Ho Lee ,  Hyun Soo Jang ,  Jong Su Kim