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    Method of depositing thin film
    1.
    发明授权
    Method of depositing thin film 有权

    公开(公告)号：US10515795B2

    公开(公告)日：2019-12-24

    申请号：US15396697

    申请日：2017-01-02

    Applicant: ASM IP Holding B.V.

    Inventor： Young Hoon Kim ,  Dae Youn Kim ,  Sang Wook Lee

    IPC: C23C16/455 ,  H01L21/02 ,  C23C16/40 ,  C23C16/452

    Abstract: A method of depositing a thin film includes: repeating a first gas supply cycle a first plurality of times, the first gas supply cycle including supplying a source gas to a reaction space; supplying first plasma while supplying a reactant gas to the reaction space; repeating a second gas supply cycle a second plurality of times, the second gas supply cycle including supplying the source gas to the reaction space; and supplying second plasma while supplying the reactant gas to the reaction space, wherein the supplying of the first plasma includes supplying remote plasma, and the supplying of the second plasma includes supplying direct plasma.

    DEPOSITION APPARATUS
    3.
    发明申请
    DEPOSITION APPARATUS 有权
    沉积装置

    公开(公告)号：US20140338601A1

    公开(公告)日：2014-11-20

    申请号：US14275912

    申请日：2014-05-13

    Applicant: ASM IP Holding B.V.

    Inventor： Young Seok CHOI ,  Dae Youn Kim

    IPC: H01J37/32

    CPC classification number: H01J37/32449 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32541 ,  H01J37/32568

    Abstract: A deposition apparatus according to an exemplary embodiment of the present invention includes: a reactor; a plasma chamber connected to the reactor; a plasma electrode mounted inside of the plasma chamber; and a gas supply plate coupled with the plasma chamber to supply gas into the plasma chamber, wherein a plurality of gas holes is formed at an inner wall of the gas supply plate, and the plurality of gas supply holes is spaced apart from each other by a predetermined interval.

    Abstract translation: 根据本发明的示例性实施例的沉积设备包括：反应器; 连接到反应器的等离子体室; 安装在等离子体室内部的等离子体电极; 以及气体供给板，其与等离子体室联接以将气体供应到等离子体室中，其中在气体供应板的内壁处形成有多个气体孔，并且多个气体供应孔通过相互间隔开 预定间隔。

    Substrate processing apparatus
    5.
    发明授权
    Substrate processing apparatus 有权

    公开(公告)号：US11001925B2

    公开(公告)日：2021-05-11

    申请号：US15835352

    申请日：2017-12-07

    Applicant: ASM IP Holding B.V.

    Inventor： Young Hoon Kim ,  Yong Gyu Han ,  Dae Youn Kim ,  Hyun Soo Jang ,  Jeong Ho Lee

    IPC: C23C16/455 ,  C23C16/52 ,  C23C16/458 ,  H01J37/32

    Abstract: A substrate processing apparatus having improved uniformity and speed of reaction is provided. A substrate processing apparatus includes a body portion comprising a discharge path, a gas supply unit connected to the body portion, a first partition extending from the body portion, a second partition extending from the body portion and arranged between the gas supply unit and the first partition, and a substrate support unit configured to have surface-sealing with the first partition, wherein a first region between the first partition and the second partition and a second region between the gas supply unit and the second partition are connected to the discharge path.

    Substrate processing apparatus
    7.
    发明授权
    Substrate processing apparatus 有权

    公开(公告)号：US10679879B2

    公开(公告)日：2020-06-09

    申请号：US16516499

    申请日：2019-07-19

    Applicant: ASM IP Holding B.V.

    Inventor： Soo Hyun Kim ,  Dae Youn Kim ,  Izumi Arai

    IPC: H01L21/677 ,  H01L21/67 ,  H01L21/687

    Abstract: Provided is a substrate processing apparatus including a load-lock chamber; a transfer chamber connected to the load-lock chamber; and one or more processing chambers connected to the transfer chamber. The transfer chamber includes a transfer arm that transfers a substrate between the load-lock chamber and the one or more processing chambers, the load-lock chamber includes a plurality of load-lock stations for accommodating a plurality of substrates as a matrix of m×n. According to the substrate processing apparatus, a time taken to transfer substrates may be reduced greatly, and productivity may be improved.

    Semiconductor manufacturing system including deposition apparatus
    8.
    发明授权
    Semiconductor manufacturing system including deposition apparatus 有权

    公开(公告)号：US10358721B2

    公开(公告)日：2019-07-23

    申请号：US15087736

    申请日：2016-03-31

    Applicant: ASM IP Holding B.V.

    Inventor： Dae Youn Kim ,  Hie Chul Kim ,  Hyun Soo Jang

    IPC: C23C16/455 ,  C23C16/50 ,  H01L21/02 ,  C23C16/509 ,  H01J37/32

    Abstract: Provided is a semiconductor manufacturing system having an increased process window for stably and flexibly performing a deposition process. The semiconductor manufacturing system includes a gas supply device functioning as a first electrode and including a plurality of injection holes, a reactor wall connected to the gas supply device, and a substrate accommodating device functioning as a second electrode, the substrate accommodating device and the reactor wall being configured to be sealed together via face sealing. A reaction gas supplied from the gas supply device toward the substrate accommodating device is discharged to the outside through a gas discharge path between the gas supply device and the reactor wall. The first electrode includes a protruded electrode adjacent to an edge of the gas supply device.

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