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    Substrate processing apparatus
    2.
    发明授权
    Substrate processing apparatus 有权

    公开(公告)号：US11001925B2

    公开(公告)日：2021-05-11

    申请号：US15835352

    申请日：2017-12-07

    Applicant: ASM IP Holding B.V.

    Inventor： Young Hoon Kim ,  Yong Gyu Han ,  Dae Youn Kim ,  Hyun Soo Jang ,  Jeong Ho Lee

    IPC: C23C16/455 ,  C23C16/52 ,  C23C16/458 ,  H01J37/32

    Abstract: A substrate processing apparatus having improved uniformity and speed of reaction is provided. A substrate processing apparatus includes a body portion comprising a discharge path, a gas supply unit connected to the body portion, a first partition extending from the body portion, a second partition extending from the body portion and arranged between the gas supply unit and the first partition, and a substrate support unit configured to have surface-sealing with the first partition, wherein a first region between the first partition and the second partition and a second region between the gas supply unit and the second partition are connected to the discharge path.

    THIN FILM DEPOSITION APPARATUS
    5.
    发明申请
    THIN FILM DEPOSITION APPARATUS 审中-公开
    薄膜沉积装置

    公开(公告)号：US20170009347A1

    公开(公告)日：2017-01-12

    申请号：US15202468

    申请日：2016-07-05

    Applicant: ASM IP Holding B.V.

    Inventor： Hyun Soo Jang ,  Dae Youn Kim ,  Jeong Ho Lee ,  Young Hoon Kim ,  Seung Seob Lee ,  Woo Chan Kim

    IPC: C23C16/505

    Abstract: A reaction chamber includes a reactor wall, a susceptor contacting the reactor wall to define a reaction space and a gas flow control device and a showerhead member stacked between the reactor wall and the susceptor. The showerhead member includes a gas channel and a showerhead. Penetration holes are formed through a protruding lateral portion of the gas flow control device, and the reactor wall and a lateral portion of the showerhead member are spaced apart from each other to form a gas discharge path. Gas remaining in the gas discharge path is discharged through the penetration holes and a gas outlet formed in an upper portion of the reactor wall. The reaction chamber provides a reaction space and the gas discharge path from which unnecessary regions are removed to rapidly change gases from one to another, and thus atomic layer deposition may be performed with high efficiency and productivity.

    Abstract translation: 反应室包括反应器壁，与反应器壁接触以限定反应空间的基座和气体流量控制装置以及堆叠在反应器壁和基座之间的喷头构件。 喷头构件包括气体通道和喷头。 渗透孔通过气体流量控制装置的突出侧面部分形成，并且反应器壁和喷头构件的侧部彼此间隔开以形成气体排出路径。 气体排出路径中残留的气体通过贯通孔排出，形成在反应器壁的上部的气体出口。 反应室提供反应空间和气体排出路径，从其中除去不需要的区域以迅速地将气体从一个换成另一个，因此可以以高效率和高生产率进行原子层沉积。

    Method of processing a substrate and a device manufactured by the same
    8.
    发明授权
    Method of processing a substrate and a device manufactured by the same 有权

    公开(公告)号：US10734244B2

    公开(公告)日：2020-08-04

    申请号：US16039867

    申请日：2018-07-19

    Applicant: ASM IP Holding B.V.

    Inventor： Young Hoon Kim ,  Jong Wan Choi ,  Jeong Jun Woo ,  Tae Hee Yoo

    IPC: H01L21/311 ,  H01L27/11582 ,  H01L21/822 ,  H01L27/11556 ,  H01L27/11548 ,  H01L27/11575 ,  H01L21/02 ,  H01L21/3105

    Abstract: Provided is a substrate processing method capable of preventing over-etching of a part of a stair-case structure due to an etching solution, when a barrier layer is selectively formed on a VNAND device having the stair-case structure. The substrate processing method includes: alternately stacking a first insulating layer and a second insulating layer; forming a stepped structure having an upper surface, a lower surface, and a side surface connecting the upper surface to the lower surface by etching the first insulating layer and the second insulating layer that are stacked; densifying the stepped structure; forming a barrier layer on the densified second insulating layer; and performing isotropic etching on at least a part of a sacrificial word line structure including the second insulating layer and the barrier layer. During etching the barrier layer at the isotropic etching step, the second insulating layer is not etched or etched a little to an ignorable degree.

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