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公开(公告)号：US11232960B2
公开(公告)日：2022-01-25
申请号：US16300595
申请日：2017-04-20
发明人： Yang-Shan Huang , Alexey Olegovich Polyakov , Coen Adrianus Verschuren , Pieter Willem Herman De Jager
IPC分类号： H01L21/67 , H05K3/30 , H01L21/683
摘要： A pick-and-place tool including a plurality of movable holder structures, and a plurality of pick-and-place structures, each holder structure accommodating two or more of the pick-and-place structures, wherein at least one of the two or more pick-and-place structures of a respective holder structure is able to move along a respective holder structure independently from another at least one of the two or more pick-and-place structures of the respective holder structure, and wherein each pick-and-place structure includes a pick-up element configured to pick up a donor component at a donor structure and place the donor component an acceptor structure.
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2.发明授权公开(公告)号：US11996267B2
公开(公告)日：2024-05-28
申请号：US17271667
申请日：2019-08-22
IPC分类号： H01J37/304 , G03F7/00 , H01J37/147 , H01J37/302 , H01J37/317 , H01L21/263
CPC分类号： H01J37/304 , G03F7/70591 , H01J37/1474 , H01J37/3023 , H01J37/3174 , H01L21/263 , H01J2237/31755
摘要： A particle beam apparatus includes an object table configured to hold a semiconductor substrate; a particle beam source configured to generate a particle beam; a detector configured to detect a response of the substrate caused by interaction of the particle beam with the substrate and to output a detector signal representative of the response; and a processing unit configured to: receive or determine a location of one or more defect target areas on the substrate; control the particle beam source to inspect the one or more defect target areas; identify one or more defects within the one or more defect target areas, based on the detector signal obtained during the inspection of the one or more defect target areas; control the particle beam source to repair the one or more defects.
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公开(公告)号：US10342108B2
公开(公告)日：2019-07-02
申请号：US15747499
申请日：2016-08-03
发明人： Alexey Olegovich Polyakov , Richard Quintanilha , Vadim Yevgenyevich Banine , Coen Adrianus Verschuren
摘要： A target structure (T) made by lithography or used in lithography is inspected by irradiating the structure at least a first time with EUV radiation (304) generated by inverse Compton scattering. Radiation (308) scattered by the target structure in reflection or transmission is detected (312) and properties of the target structure are calculated by a processor (340) based on the detected scattered radiation. The radiation may have a first wavelength in the EUV range of 0.1 nm to 125 nm. Using the same source and controlling an electron energy, the structure may be irradiated multiple times with different wavelengths within the EUV range, and/or with shorter (x-ray) wavelengths and/or with longer (UV, visible) wavelengths. By rapid switching of electron energy in the inverse Compton scattering source, irradiation at different wavelengths can be performed several times per second.
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公开(公告)号：US11415886B2
公开(公告)日：2022-08-16
申请号：US16512558
申请日：2019-07-16
摘要： A resist composition is disclosed which comprises a perovskite material with a structure having a chemical formula selected from ABX3, A2BX4, or ABX4, wherein A is a compound containing an NH3 group, B is a metal and X is a halide constituent. The perovskite material may comprise one or more of the following components: halogen-mixed perovskite material; metal-mixed perovskite material, and organic ligand mixed perovskite material.
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公开(公告)号：US10948837B2
公开(公告)日：2021-03-16
申请号：US16629359
申请日：2018-06-18
发明人： An Gao , Sanjaysingh Lalbahadoersing , Andrey Alexandrovich Nikipelov , Alexey Olegovich Polyakov , Brennan Peterson
IPC分类号： G01B11/00 , G03F9/00 , G03F7/20 , H01L23/544
摘要： An apparatus for determining information relating to at least one target alignment mark in a semiconductor device substrate. The target alignment mark is initially at least partially obscured by an opaque carbon or metal layer on the substrate. The apparatus includes an energy delivery system configured to emit a laser beam for modifying at least one portion of the opaque layer to cause a phase change and/or chemical change in the at least one portion that increases the transparency of the portion. An optical signal can propagate through the modified portion to determine information relating to the target alignment mark.
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公开(公告)号：US10555407B2
公开(公告)日：2020-02-04
申请号：US16388519
申请日：2019-04-18
发明人： Alexey Olegovich Polyakov , Richard Quintanilha , Vadim Yevgenyevich Banine , Coen Adrianus Verschuren
摘要： A target structure (T) made by lithography or used in lithography is inspected by irradiating the structure at least a first time with EUV radiation (304) generated by inverse Compton scattering. Radiation (308) scattered by the target structure in reflection or transmission is detected (312) and properties of the target structure are calculated by a processor (340) based on the detected scattered radiation. The radiation may have a first wavelength in the EUV range of 0.1 nm to 125 nm. Using the same source and controlling an electron energy, the structure may be irradiated multiple times with different wavelengths within the EUV range, and/or with shorter (x-ray) wavelengths and/or with longer (UV, visible) wavelengths. By rapid switching of electron energy in the inverse Compton scattering source, irradiation at different wavelengths can be performed several times per second.
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公开(公告)号：US10416555B2
公开(公告)日：2019-09-17
申请号：US15538191
申请日：2015-12-01
摘要： A resist composition is disclosed which comprises a perovskite material with a structure having a chemical formula selected from ABX3, A2BX4, or ABX4, wherein A is a compound containing an NH3 group, B is a metal and X is a halide constituent. The perovskite material may comprise one or more of the following components: halogen-mixed perovskite material; metal-mixed perovskite material, and organic ligand mixed perovsikte material.
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