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公开(公告)号：US10416555B2
公开(公告)日：2019-09-17
申请号：US15538191
申请日：2015-12-01
Applicant: ASML Netherlands B.V.
Abstract: A resist composition is disclosed which comprises a perovskite material with a structure having a chemical formula selected from ABX3, A2BX4, or ABX4, wherein A is a compound containing an NH3 group, B is a metal and X is a halide constituent. The perovskite material may comprise one or more of the following components: halogen-mixed perovskite material; metal-mixed perovskite material, and organic ligand mixed perovsikte material.
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公开(公告)号：US11762281B2
公开(公告)日：2023-09-19
申请号：US17130537
申请日：2020-12-22
Applicant: ASML NETHERLANDS B.V.
Inventor： Maxim Aleksandrovich Nasalevich , Erik Achilles Abegg , Nirupam Banerjee , Michiel Alexander Blauw , Derk Servatius Gertruda Brouns , Paul Janssen , Matthias Kruizinga , Egbert Lenderink , Nicolae Maxim , Andrey Nikipelov , Arnoud Willem Notenboom , Claudia Piliego , Mária Péter , Gijsbert Rispens , Nadja Schuh , Marcus Adrianus Van De Kerkhof , Willem Joan Van Der Zande , Pieter-Jan Van Zwol , Antonius Willem Verburg , Johannes Petrus Martinus Bernardus Vermeulen , David Ferdinand Vles , Willem-Pieter Voorthuijzen , Aleksandar Nikolov Zdravkov
CPC classification number: G03F1/62 , G02B5/208 , G02B5/283 , G03F1/82 , G03F7/70191 , G03F7/70575 , G03F7/70916 , G03F7/70958 , G03F7/70983
Abstract: Membranes for EUV lithography are disclosed. In one arrangement, a membrane has a stack having layers in the following order: a first capping layer including an oxide of a first metal; a base layer including a compound having a second metal and an additional element selected from the group consisting of Si, B, C and N; and a second capping layer including an oxide of a third metal, wherein the first metal is different from the second metal and the third metal is the same as or different from the first metal.
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公开(公告)号：US11079687B2
公开(公告)日：2021-08-03
申请号：US16955483
申请日：2018-12-17
Applicant: ASML NETHERLANDS B.V.
Inventor： Abraham Slachter , Stefan Hunsche , Wim Tjibbo Tel , Anton Bernhard Van Oosten , Koenraad Van Ingen Schenau , Gijsbert Rispens , Brennan Peterson
IPC: G03F7/20
Abstract: A method including obtaining (i) measurements of a parameter of the feature, (ii) data related to a process variable of a patterning process, (iii) a functional behavior of the parameter defined as a function of the process variable based on the measurements of the parameter and the data related to the process variable, (iv) measurements of a failure rate of the feature, and (v) a probability density function of the process variable for a setting of the process variable, converting the probability density function of the process variable to a probability density function of the parameter based on a conversion function, where the conversion function is determined based on the function of the process variable, and determining a parameter limit of the parameter based on the probability density function of the parameter and the measurements of the failure rate.
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Patent Agency Ranking
公开(公告)号：US20210109438A1
公开(公告)日：2021-04-15
申请号：US17130537
申请日：2020-12-22
Applicant: ASML NETHERLANDS B.V.
Inventor： Maxim Aleksandrovich Nasalevich , Erik Achilles Abegg , Nirupam Banerjee , Michiel Alexander Blauw , Derk Servatius Gertruda Brouns , Paul Janssen , Matthias Kruizinga , Egbert Lenderink , Nicolae Maxim , Andrey Nikipelov , Arnoud Willem Notenboom , Claudia Piliego , Mária Péter , Gijsbert Rispens , Nadja Schuh , Marcus Adrianus Van De Kerkhof , Willem Joan Van Der Zande , Pieter-Jan Van Zwol , Antonius Willem Verburg , Johannes Petrus Martinus Bernardus Vermeulen , David Ferdinand Vles , Willem-Pieter Voorthuijzen , Aleksandar Nikolov Zdravkov
Abstract: Membranes for EUV lithography are disclosed. In one arrangement, a membrane has a stack having layers in the following order: a first capping layer including an oxide of a first metal; a base layer including a compound having a second metal and an additional element selected from the group consisting of Si, B, C and N; and a second capping layer including an oxide of a third metal, wherein the first metal is different from the second metal and the third metal is the same as or different from the first metal.
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公开(公告)号：US10948825B2
公开(公告)日：2021-03-16
申请号：US16061553
申请日：2016-12-22
Applicant: ASML NETHERLANDS B.V.
Inventor： Christianus Wilhelmus Johannes Berendsen , Güneş Nakibo{hacek over (g)}lu , Daan Daniel Johannes Antonius Van Sommeren , Gijsbert Rispens , Johan Franciscus Maria Beckers , Theodorus Johannes Antonius Renckens
Abstract: A method of processing a substrate includes: providing a substrate with a layer of photosensitive material on a surface of the substrate; and removing at least part of the photosensitive material from around an outer edge of the layer of photosensitive material so as to generate an edge, having a radial width, around the layer of photosensitive material remaining on the surface of the substrate, wherein the photosensitive material varies in thickness forming a thickness profile across the radial width and the removing is controlled so as to generate variation in the thickness profile along the length of the edge, and/or wherein the removing is controlled so as to generate a rough edge around the layer of photosensitive material remaining on the surface of the substrate.
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公开(公告)号：US11822255B2
公开(公告)日：2023-11-21
申请号：US17389842
申请日：2021-07-30
Applicant: ASML NETHERLANDS B.V.
Inventor： Abraham Slachter , Stefan Hunsche , Wim Tjibbo Tel , Anton Bernhard Van Oosten , Koenraad Van Ingen Schenau , Gijsbert Rispens , Brennan Peterson
CPC classification number: G03F7/70633 , G03F7/705 , G03F7/70558 , G03F7/70625
Abstract: A method including obtaining (i) measurements of a parameter of the feature, (ii) data related to a process variable of a patterning process, (iii) a functional behavior of the parameter defined as a function of the process variable based on the measurements of the parameter and the data related to the process variable, (iv) measurements of a failure rate of the feature, and (v) a probability density function of the process variable for a setting of the process variable, converting the probability density function of the process variable to a probability density function of the parameter based on a conversion function, where the conversion function is determined based on the function of the process variable, and determining a parameter limit of the parameter based on the probability density function of the parameter and the measurements of the failure rate.
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公开(公告)号：US11415886B2
公开(公告)日：2022-08-16
申请号：US16512558
申请日：2019-07-16
Applicant: ASML Netherlands B.V.
Abstract: A resist composition is disclosed which comprises a perovskite material with a structure having a chemical formula selected from ABX3, A2BX4, or ABX4, wherein A is a compound containing an NH3 group, B is a metal and X is a halide constituent. The perovskite material may comprise one or more of the following components: halogen-mixed perovskite material; metal-mixed perovskite material, and organic ligand mixed perovskite material.
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公开(公告)号：US10908496B2
公开(公告)日：2021-02-02
申请号：US16093537
申请日：2017-04-12
Applicant: ASML NETHERLANDS B.V.
Inventor： Maxim Aleksandrovich Nasalevich , Erik Achilles Abegg , Nirupam Banerjee , Michiel Alexander Blauw , Derk Servatius Gertruda Brouns , Paul Janssen , Matthias Kruizinga , Egbert Lenderink , Nicolae Maxim , Andrey Nikipelov , Arnoud Willem Notenboom , Claudia Piliego , Mária Péter , Gijsbert Rispens , Nadja Schuh , Marcus Adrianus Van De Kerkhof , Willem Joan Van Der Zande , Pieter-Jan Van Zwol , Antonius Willem Verburg , Johannes Petrus Martinus Bernardus Vermeulen , David Ferdinand Vles , Willem-Pieter Voorthuijzen , Aleksandar Nikolov Zdravkov
Abstract: Membranes for EUV lithography are disclosed. In one arrangement, a membrane has a stack having layers in the following order: a first capping layer including an oxide of a first metal; a base layer including a compound having a second metal and an additional element selected from the group consisting of Si, B, C and N; and a second capping layer including an oxide of a third metal, wherein the first metal is different from the second metal and the third metal is the same as or different from the first metal.
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