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1.发明授权公开(公告)号：US11747738B2
公开(公告)日：2023-09-05
申请号：US16314805
申请日：2017-06-27
Applicant: ASML NETHERLANDS B.V.
Inventor： Coen Adrianus Verschuren , Erwin Paul Smakman
CPC classification number: G03F7/70291 , G03F7/70383 , G03F7/70433 , G03F7/70508
Abstract: A direct write exposure apparatus configured to process a plurality of substrates, the apparatus including: a substrate holder configured to hold a substrate having a usable patterning area; a patterning system configured to project different patterns onto the substrate; a processing system configured to: determine a first combination of one or more patterns that are to be applied on a first substrate of the plurality of substrates; and determine a second, different combination of one or more patterns that are to be applied on a second, subsequent, substrate of the plurality of substrates.
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公开(公告)号：US10342108B2
公开(公告)日：2019-07-02
申请号：US15747499
申请日：2016-08-03
Applicant: ASML Netherlands B.V.
Inventor： Alexey Olegovich Polyakov , Richard Quintanilha , Vadim Yevgenyevich Banine , Coen Adrianus Verschuren
Abstract: A target structure (T) made by lithography or used in lithography is inspected by irradiating the structure at least a first time with EUV radiation (304) generated by inverse Compton scattering. Radiation (308) scattered by the target structure in reflection or transmission is detected (312) and properties of the target structure are calculated by a processor (340) based on the detected scattered radiation. The radiation may have a first wavelength in the EUV range of 0.1 nm to 125 nm. Using the same source and controlling an electron energy, the structure may be irradiated multiple times with different wavelengths within the EUV range, and/or with shorter (x-ray) wavelengths and/or with longer (UV, visible) wavelengths. By rapid switching of electron energy in the inverse Compton scattering source, irradiation at different wavelengths can be performed several times per second.
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公开(公告)号：US20240186107A1
公开(公告)日：2024-06-06
申请号：US18411525
申请日：2024-01-12
Applicant: ASML NETHERLANDS B.V.
Inventor： Bernardo KASTRUP , Johannes Catharinus Hubertus Mulkens , Marinus Aart Van Den Brink , Jozef Petrus Henricus Benschop , Erwin Paul Smakman , Tamara Druzhinina , Coen Adrianus Verschuren
CPC classification number: H01J37/263 , H01J37/023 , H01J37/15 , H01J37/22 , H01J37/244 , H01J37/28 , H01J2237/0245 , H01J2237/2817
Abstract: An electron beam inspection apparatus, the apparatus including a plurality of electron beam columns, each electron beam column configured to provide an electron beam and detect scattered or secondary electrons from an object, and an actuator system configured to move one or more of the electron beam columns relative to another one or more of the electron beam columns, the actuator system including a plurality of first movable structures at least partly overlapping a plurality of second movable structures, the first and second movable structures supporting the plurality of electron beam columns.
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公开(公告)号：US10712669B2
公开(公告)日：2020-07-14
申请号：US16064366
申请日：2016-12-14
Applicant: ASML NETHERLANDS B.V.
Inventor： Erwin Paul Smakman , Coen Adrianus Verschuren
Abstract: A method and apparatus to provide a plurality of radiation beams modulated according to at least two sub patterns of a pattern using radiation sources, the radiation sources producing radiation beams of at least two spot sizes such that each of the radiation beams having a same spot size of the at least two spot sizes is used to produce one of the at least two sub patterns, project the plurality of beams onto a substrate, and provide relative motion between the substrate and the plurality of radiation sources, in a scanning direction to expose the substrate. A method and apparatus to provide radiation modulated according to a desired pattern using a plurality of rows of two-dimensional arrays of radiation sources, project the modulated radiation onto a substrate using a projection system, and remove fluid from between the projection system and the substrate using one or more fluid removal units.
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公开(公告)号：US10555407B2
公开(公告)日：2020-02-04
申请号：US16388519
申请日：2019-04-18
Applicant: ASML Netherlands B.V.
Inventor： Alexey Olegovich Polyakov , Richard Quintanilha , Vadim Yevgenyevich Banine , Coen Adrianus Verschuren
Abstract: A target structure (T) made by lithography or used in lithography is inspected by irradiating the structure at least a first time with EUV radiation (304) generated by inverse Compton scattering. Radiation (308) scattered by the target structure in reflection or transmission is detected (312) and properties of the target structure are calculated by a processor (340) based on the detected scattered radiation. The radiation may have a first wavelength in the EUV range of 0.1 nm to 125 nm. Using the same source and controlling an electron energy, the structure may be irradiated multiple times with different wavelengths within the EUV range, and/or with shorter (x-ray) wavelengths and/or with longer (UV, visible) wavelengths. By rapid switching of electron energy in the inverse Compton scattering source, irradiation at different wavelengths can be performed several times per second.
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Patent Agency Ranking
6.发明授权公开(公告)号：US12209994B2
公开(公告)日：2025-01-28
申请号：US17634711
申请日：2020-07-22
Applicant: ASML Netherlands B.V.
Inventor： Zili Zhou , Mustafa Ümit Arabul , Coen Adrianus Verschuren
Abstract: The disclosure relates to determining information about a target structure formed on a substrate using a lithographic process. In one arrangement, a cantilever probe is provided having a cantilever arm and a probe element. The probe element extends from the cantilever arm towards the target structure. Ultrasonic waves are generated in the cantilever probe. The ultrasonic waves propagate through the probe element into the target structure and reflect back from the target structure into the probe element or into a further probe element extending from the cantilever arm. The reflected ultrasonic waves are detected and used to determine information about the target structure.
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公开(公告)号：US11875966B2
公开(公告)日：2024-01-16
申请号：US17403006
申请日：2021-08-16
Applicant: ASML NETHERLANDS B.V.
Inventor： Bernardo Kastrup , Johannes Catharinus Hubertus Mulkens , Marinus Aart Van Den Brink , Jozef Petrus Henricus Benschop , Erwin Paul Smakman , Tamara Druzhinina , Coen Adrianus Verschuren
CPC classification number: H01J37/263 , H01J37/023 , H01J37/15 , H01J37/22 , H01J37/244 , H01J37/28 , H01J2237/0245 , H01J2237/2817
Abstract: An electron beam inspection apparatus, the apparatus including a plurality of electron beam columns, each electron beam column configured to provide an electron beam and detect scattered or secondary electrons from an object, and an actuator system configured to move one or more of the electron beam columns relative to another one or more of the electron beam columns, the actuator system including a plurality of first movable structures at least partly overlapping a plurality of second movable structures, the first and second movable structures supporting the plurality of electron beam columns.
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公开(公告)号：US11232960B2
公开(公告)日：2022-01-25
申请号：US16300595
申请日：2017-04-20
Applicant: ASML NETHERLANDS B.V.
Inventor： Yang-Shan Huang , Alexey Olegovich Polyakov , Coen Adrianus Verschuren , Pieter Willem Herman De Jager
IPC: H01L21/67 , H05K3/30 , H01L21/683
Abstract: A pick-and-place tool including a plurality of movable holder structures, and a plurality of pick-and-place structures, each holder structure accommodating two or more of the pick-and-place structures, wherein at least one of the two or more pick-and-place structures of a respective holder structure is able to move along a respective holder structure independently from another at least one of the two or more pick-and-place structures of the respective holder structure, and wherein each pick-and-place structure includes a pick-up element configured to pick up a donor component at a donor structure and place the donor component an acceptor structure.
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公开(公告)号：US10527950B2
公开(公告)日：2020-01-07
申请号：US16314740
申请日：2017-06-27
Applicant: ASML NETHERLANDS B.V.
Inventor： Erwin Paul Smakman , Coen Adrianus Verschuren
Abstract: An exposure apparatus including: a substrate holder constructed to support a substrate; a patterning device configured to provide radiation modulated according to a desired pattern, the patterning device including an array of radiation source modules configured to project the modulated radiation onto a respective array of exposure regions on the substrate; and a distributed processing system configured to process projection related data to enable the projection of the desired pattern onto the substrate, the distributed processing system including at least one central processing unit and a plurality of module processing units each associated with a respective radiation source module.
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公开(公告)号：US11094502B2
公开(公告)日：2021-08-17
申请号：US16064193
申请日：2016-12-09
Applicant: ASML NETHERLANDS B.V.
Inventor： Bernardo Kastrup , Johannes Catharinus Hubertus Mulkens , Marinus Aart Van Den Brink , Jozef Petrus Henricus Benschop , Erwin Paul Smakman , Tamara Druzhinina , Coen Adrianus Verschuren
Abstract: An electron beam inspection apparatus, the apparatus including a plurality of electron beam columns, each electron beam column configured to provide an electron beam and detect scattered or secondary electrons from an object, and an actuator system configured to move one or more of the electron beam columns relative to another one or more of the electron beam columns. The actuator system may include a plurality of first movable structures at least partly overlapping a plurality of second movable structures, the first and second movable structures supporting the plurality of electron beam columns.
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