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公开(公告)号：US10067074B2
公开(公告)日：2018-09-04
申请号：US15079860
申请日：2016-03-24
Applicant: ASML Netherlands B.V.
Inventor： Richard Quintanilha , Serhiy Danylyuk
IPC: G06K9/00 , G01N21/956 , G01N21/88 , G03F7/20
Abstract: A lithographic manufacturing system produces periodic structures with feature sizes less than 10 nm and a direction of periodicity (D). A beam of radiation (1904) having a range of wavelengths in the EUV spectrum (1-100 nm or 1-150 nm) is focused into a spot (S) of around 5 μm diameter. Reflected radiation (1908) is broken into a spectrum (1910) which is captured (1913) to obtain a target spectrum signal (ST). A reference spectrum is detected (1914) to obtain a reference spectrum signal (SR). Optionally a detector (1950) is provided to obtain a further spectrum signal (SF) using radiation diffracted at first order by the grating structure of the target. The angle of incidence (α) and azimuthal angle (φ) are adjustable. The signals (ST, SR, SF) obtained at one or more angles are used to calculate measured properties of the target, for example CD and overlay.
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公开(公告)号：US10222709B2
公开(公告)日：2019-03-05
申请号：US15013756
申请日：2016-02-02
Applicant: ASML NETHERLANDS B.V.
Inventor： Richard Quintanilha
IPC: G01N23/083 , G03F7/20
Abstract: A pattern is applied to a substrate by a lithographic apparatus as part of a lithographic manufacturing system. Structures are produced with feature sizes less than 10 nm. A target includes one or more gratings with a direction of periodicity. A detector captures one or more diffraction spectra, to implement small angle X-ray scattering metrology. One or more properties, such as linewidth (CD), are calculated from the captured spectra for example by reconstruction. The irradiation direction defines a non-zero polar angle relative to a direction normal to the substrate and defines a non-zero azimuthal angle relative to the direction of periodicity, when projected onto a plane of the substrate. By selecting a suitable azimuthal angle, the diffraction efficiency of the target can be enhanced by a large factor. This allows measurement time to be reduced significantly compared with known techniques.
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公开(公告)号：US10146140B2
公开(公告)日：2018-12-04
申请号：US15285051
申请日：2016-10-04
Applicant: ASML Netherlands B.V.
IPC: G03B27/68 , G03F7/20 , G01B15/00 , G01N23/201
Abstract: A structure of interest is irradiated with radiation for example in the x-ray or EUV waveband, and scattered radiation is detected by a detector (306). A processor (308) calculates a property such as linewidth (CD) by simulating interaction of radiation with a structure and comparing the simulated interaction with the detected radiation. A layered structure model (600, 610) is used to represent the structure in a numerical method. The structure model defines for each layer of the structure a homogeneous background permittivity and for at least one layer a non-homogeneous contrast permittivity. The method uses Maxwell's equation in Born approximation, whereby a product of the contrast permittivity and the total field is approximated by a product of the contrast permittivity and the background field. A computation complexity is reduced by several orders of magnitude compared with known methods.
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公开(公告)号：US09563131B2
公开(公告)日：2017-02-07
申请号：US14934734
申请日：2015-11-06
Applicant: ASML Netherlands B.V.
Inventor： Richard Quintanilha
CPC classification number: G03F7/70308 , G01N21/93 , G01N21/956 , G03F1/144 , G03F7/70641 , G03F7/70683
Abstract: A method uses a lithographic apparatus to form an inspection target structure upon a substrate. The method comprises forming the periphery of the inspection target structure so as to provide a progressive optical contrast transition between the inspection target structure and its surrounding environment. This may be achieved by providing a progressive change in the optical index at the periphery of the target structure.
Abstract translation: 一种方法使用光刻设备在基板上形成检查目标结构。 该方法包括形成检查对象结构的周边，以便在检查目标结构及其周围环境之间提供逐行的光学对比度过渡。 这可以通过提供目标结构的周边处的光学折射率的逐渐变化来实现。
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公开(公告)号：US11692948B2
公开(公告)日：2023-07-04
申请号：US16963905
申请日：2019-01-08
Applicant: ASML NETHERLANDS B.V.
Inventor： Nitish Kumar , Richard Quintanilha , Markus Gerardus Martinus Maria Van Kraaij , Konstantin Tsigutkin , Willem Marie Julia Marcel Coene
IPC: G01N21/956 , G02F1/35 , G03F1/84
CPC classification number: G01N21/956 , G02F1/353 , G03F1/84 , G01N2021/95676 , G01N2201/06113
Abstract: A method of inspection for defects on a substrate, such as a reflective reticle substrate, and associated apparatuses. The method includes performing the inspection using inspection radiation obtained from a high harmonic generation source and having one or more wavelengths within a wavelength range of between 20 nm and 150 nm. Also, a method including performing a coarse inspection using first inspection radiation having one or more first wavelengths within a first wavelength range; and performing a fine inspection using second inspection radiation having one or more second wavelengths within a second wavelength range, the second wavelength range comprising wavelengths shorter than the first wavelength range.
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Patent Agency Ranking
6.发明授权公开(公告)号：US11347151B2
公开(公告)日：2022-05-31
申请号：US16394738
申请日：2019-04-25
Applicant: ASML Netherlands B.V.
IPC: G03F7/20 , G01N21/95 , G01N21/956 , G03F9/00
Abstract: A method of calculating electromagnetic scattering properties of a structure represented as a nominal structure and a structural perturbation, has the steps: 1008 numerically solving a volume integral equation comprising a nominal linear system 1004 to determine a nominal vector field being independent with respect to the structural perturbation; 1010 using a perturbed linear system 1006 to determine an approximation of a vector field perturbation arising from the structural perturbation, by solving a volume integral equation or an adjoint linear system. Matrix-vector multiplication of a nominal linear system matrix convolution operator may be restricted to sub-matrices; and 1012 calculating electromagnetic scattering properties of the structure using the determined nominal vector field and the determined approximation of the vector field perturbation.
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公开(公告)号：US10342108B2
公开(公告)日：2019-07-02
申请号：US15747499
申请日：2016-08-03
Applicant: ASML Netherlands B.V.
Inventor： Alexey Olegovich Polyakov , Richard Quintanilha , Vadim Yevgenyevich Banine , Coen Adrianus Verschuren
Abstract: A target structure (T) made by lithography or used in lithography is inspected by irradiating the structure at least a first time with EUV radiation (304) generated by inverse Compton scattering. Radiation (308) scattered by the target structure in reflection or transmission is detected (312) and properties of the target structure are calculated by a processor (340) based on the detected scattered radiation. The radiation may have a first wavelength in the EUV range of 0.1 nm to 125 nm. Using the same source and controlling an electron energy, the structure may be irradiated multiple times with different wavelengths within the EUV range, and/or with shorter (x-ray) wavelengths and/or with longer (UV, visible) wavelengths. By rapid switching of electron energy in the inverse Compton scattering source, irradiation at different wavelengths can be performed several times per second.
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公开(公告)号：US09915879B2
公开(公告)日：2018-03-13
申请号：US14710443
申请日：2015-05-12
Applicant: ASML Netherlands B.V.
Inventor： Richard Quintanilha , Willem Marie Julia Marcel Coene
CPC classification number: G03F7/70633 , G03F7/70683
Abstract: A pattern from a patterning device is applied to a substrate by a lithographic apparatus. The applied pattern includes product features and metrology targets. The metrology targets include large targets which are for measuring overlay using X-ray scattering and small targets which are for measuring overlay by diffraction of visible radiation. Some of the smaller targets are distributed at locations between the larger targets, while other small targets are placed at the same locations as a large target. By comparing values measured using a small target and large target at the same location, parameter values measured using all the small targets can be corrected for better accuracy. The large targets can be located primarily within scribe lanes while the small targets are distributed within product areas.
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公开(公告)号：US09823586B2
公开(公告)日：2017-11-21
申请号：US15230937
申请日：2016-08-08
Applicant: ASML Netherlands B.V.
Inventor： Richard Quintanilha
CPC classification number: G03F7/7065 , G01N21/4788 , G01N21/95607 , G01N2021/95615 , G01N2201/06113 , G01N2201/12 , G02B21/365 , G02B21/367 , G03F1/24 , G03F1/84 , G21K7/00 , G21K2207/00 , G21K2207/005
Abstract: A product structure (407, 330′) is formed with defects (360-366). A spot (S) of EUV radiation which is at least partially coherent is provided on the product structure (604) to capture at least one diffraction pattern (606) formed by the radiation after scattering by the product structure. Reference data (612) describes a nominal product structure. At least one synthetic image (616) of the product structure is calculated from the captured image data. Data from the synthetic image is compared with the reference data to identify defects (660-666) in the product structure. In one embodiment, a plurality of diffraction patterns are obtained using a series overlapping spots (S(1)-S(N)), and the synthetic image is calculated using the diffraction patterns and knowledge of the relative displacement. The EUV radiation may have wavelengths in the range 5 to 50 nm, close to dimensions of the structures of interest.
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公开(公告)号：US09261772B2
公开(公告)日：2016-02-16
申请号：US13853407
申请日：2013-03-29
Applicant: ASML Netherlands B.V.
Inventor： Richard Quintanilha
IPC: G03B27/54 , G03F1/00 , G01N21/93 , G03F7/20 , G01N21/956
CPC classification number: G03F7/70308 , G01N21/93 , G01N21/956 , G03F1/144 , G03F7/70641 , G03F7/70683
Abstract: A method uses a lithographic apparatus to form an inspection target structure upon a substrate. The method comprises forming the periphery of the inspection target structure so as to provide a progressive optical contrast transition between the inspection target structure and its surrounding environment. This may be achieved by providing a progressive change in the optical index at the periphery of the target structure.
Abstract translation: 一种方法使用光刻设备在基板上形成检查目标结构。 该方法包括形成检查对象结构的周边，以便在检查目标结构及其周围环境之间提供逐行的光学对比度过渡。 这可以通过提供目标结构的周边处的光学折射率的逐渐变化来实现。
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