公开(公告)号：US20140333922A1

公开(公告)日：2014-11-13

申请号：US14335702

申请日：2014-07-18

Applicant: ASML Netherlands B.V.

Inventor： Marcus Adrianus VAN DE KERKHOF ,  Maurits VAN DER SCHAAR ,  Andreas FUCHS ,  Martyn John COOGANS

IPC: G03F7/20 ,  G01N21/47 ,  G01N21/95

CPC classification number: G03F7/7065 ,  G01N21/47 ,  G01N21/4788 ,  G01N21/9501 ,  G01N21/956 ,  G03F7/70633 ,  G03F9/7049 ,  G03F9/7088

Abstract: The present invention makes the use of measurement of a diffraction spectrum in or near an image plane in order to determine a property of an exposed substrate. In particular, the positive and negative first diffraction orders are separated or diverged, detected and their intensity measured to determine overlay (or other properties) of exposed layers on the substrate.

Abstract translation: 本发明使用在图像平面内或附近测量衍射光谱，以便确定曝光的基底的性质。 特别地，正和负的第一衍射级被分离或发散，被检测并且测量它们的强度以确定衬底上的暴露层的覆盖层（或其它性质）。

公开(公告)号：US20220057192A1

公开(公告)日：2022-02-24

申请号：US17519641

申请日：2021-11-05

Applicant: ASML NETHERLANDS B.V.

Inventor： Kaustuve BHATTACHARYYA ,  Henricus Wilhelmus Maria VAN BUEL ,  Christophe David FOUQUET ,  Hendrik Jan Hidde SMILDE ,  Maurits VAN DER SCHAAR ,  Arie Jeffrey DEN BOEF ,  Richard Johannes Franciscus VAN HAREN ,  Xing Lan LIU ,  Johannes Marcus Maria BELTMAN ,  Andreas FUCHS ,  Omer Abubaker Omer ADAM ,  Michael KUBIS ,  Martin Jacobus Johan JAK

IPC: G01B11/14 ,  G03F7/20

Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.

公开(公告)号：US20140176955A1

公开(公告)日：2014-06-26

申请号：US14190036

申请日：2014-02-25

Applicant: ASML Netherlands B.V.

Inventor： Andreas FUCHS ,  Maurits Van Der Schaar ,  Scott Anderson Middlebrooks ,  Panagiotis Pieter Bintevinos

IPC: G03F7/20

CPC classification number: G03F7/70633 ,  G01N21/956

Abstract: A method for determining overlay error includes measuring asymmetry of radiation reflected from each of a plurality of targets on a substrate. The plurality of targets include a predetermined overlay offset. The method also includes comparing the measured asymmetry of the radiation reflected from each of the plurality of targets to the corresponding predetermined overlay offset of the respective target. Additionally, the method includes determining the overlay error of a point on the substrate as a function of measured asymmetry reflected from the point. The function is determined by fitting a polynomial or a Fourier series to a comparison of the measured asymmetry of the radiation reflected from each of the plurality of targets to the corresponding predetermined overlay offset of the respective target. The function limits an effect of linearity error.

Abstract translation: 用于确定覆盖误差的方法包括测量从衬底上的多个靶中的每一个反射的辐射的不对称性。 多个目标包括预定的覆盖偏移。 该方法还包括将从多个目标中的每一个反射的辐射的测量的不对称性与相应目标的对应的预定叠加偏移进行比较。 另外，该方法包括根据从该点反射的测量的不对称性来确定衬底上的点的重叠误差。 通过将多项式或傅里叶级数拟合到从多个目标中的每一个反射的辐射的测量的不对称与相应目标的对应的预定叠加偏移的比较来确定该功能。 该功能限制了线性误差的影响。

公开(公告)号：US20160180517A1

公开(公告)日：2016-06-23

申请号：US14971887

申请日：2015-12-16

Applicant: ASML NETHERLANDS B.V.

Inventor： Andreas FUCHS ,  Peter Hanzen WARDENIER ,  Amandev SINGH ,  Maxime D' ALFONSO ,  Hilko Dirk BOS

IPC: G06T7/00

CPC classification number: G06T7/0004 ,  G03F7/70633 ,  G03F7/70941 ,  G06T7/11 ,  G06T2207/30148

Abstract: A scatterometer is used in a dark-field imaging mode to measure asymmetry-related parameters such as overlay. Measurements of small grating targets are made using identical optical paths, with the target in two orientations to obtain separate measurements of +1 and −1 diffraction orders. In this way, intensity scaling differences (tool asymmetry) are avoided. However, additive intensity defects due to stray radiation (ghosts) in the optical system cannot be avoided. Additive intensity issues strongly depend on the ratio between 0th and 1st order diffraction and are therefore strongly substrate (process) dependent. Calibration measurements are made on a few representative target gratings having biases. The calibration measurements are made, using not only different substrate rotations but also complementary apertures. Corrections are calculated and applied to correct asymmetry, to reduce error caused by stray radiation.

Abstract translation: 在暗场成像模式中使用散射仪来测量不对称相关的参数，如覆盖。 使用相同的光路进行小光栅目标的测量，目标在两个取向上以获得+1和-1衍射级的单独测量。 以这种方式，避免了强度缩放差异（工具不对称）。 然而，由于光学系统中的杂散辐射（重影）引起的附加强度缺陷是不能避免的。 添加强度问题很大程度上依赖于第0级和第1级衍射之间的比例，因此依赖于衬底（工艺）。 在具有偏差的几个代表性目标光栅上进行校准测量。 进行校准测量，不仅使用不同的衬底旋转，而且使用互补的孔。 校正被计算并应用于纠正不对称性，以减少由杂散辐射引起的误差。

公开(公告)号：US20140327908A1

公开(公告)日：2014-11-06

申请号：US14335711

申请日：2014-07-18

Applicant: ASML Netherlands B.V.

Inventor： Marcus Adrianus VAN DE KERKHOF ,  Maurits VAN DER SCHAAR ,  Andreas FUCHS ,  Martyn John COOGANS

IPC: G01N21/47

CPC classification number: G03F7/7065 ,  G01N21/47 ,  G01N21/4788 ,  G01N21/9501 ,  G01N21/956 ,  G03F7/70633 ,  G03F9/7049 ,  G03F9/7088

Abstract: The present invention makes the use of measurement of a diffraction spectrum in or near an image plane in order to determine a property of an exposed substrate. In particular, the positive and negative first diffraction orders are separated or diverged, detected and their intensity measured to determine overlay (or other properties) of exposed layers on the substrate.