公开(公告)号：US20220057192A1

公开(公告)日：2022-02-24

申请号：US17519641

申请日：2021-11-05

Applicant: ASML NETHERLANDS B.V.

Inventor： Kaustuve BHATTACHARYYA ,  Henricus Wilhelmus Maria VAN BUEL ,  Christophe David FOUQUET ,  Hendrik Jan Hidde SMILDE ,  Maurits VAN DER SCHAAR ,  Arie Jeffrey DEN BOEF ,  Richard Johannes Franciscus VAN HAREN ,  Xing Lan LIU ,  Johannes Marcus Maria BELTMAN ,  Andreas FUCHS ,  Omer Abubaker Omer ADAM ,  Michael KUBIS ,  Martin Jacobus Johan JAK

IPC: G01B11/14 ,  G03F7/20

Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.

公开(公告)号：US20160349627A1

公开(公告)日：2016-12-01

申请号：US15117409

申请日：2015-01-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Maurits VAN DER SCHAAR ,  Arie Jeffrey DEN BOEF ,  Omer Abubaker Omer ADAM ,  Te-Chih HUANG ,  Youping ZHANG

IPC: G03F7/20 ,  G01N21/88 ,  G01N21/47

CPC classification number: G03F7/70633 ,  G01N21/47 ,  G01N21/8806 ,  G01N2201/12 ,  G03F7/70683

Abstract: There is disclosed a method of measuring a process parameter for a manufacturing process involving lithography. In a disclosed arrangement the method comprises performing first and second measurements of overlay error in a region on a substrate, and obtaining a measure of the process parameter based on the first and second measurements of overlay error. The first measurement of overlay error is designed to be more sensitive to a perturbation in the process parameter than the second measurement of overlay error by a known amount.

Abstract translation: 公开了一种测量涉及光刻的制造工艺的工艺参数的方法。 在公开的布置中，该方法包括对基板上的区域中的覆盖误差执行第一和第二测量，并且基于重叠误差的第一和第二测量值获得处理参数的度量。 重叠误差的第一次测量被设计为对过程参数中的扰动比已知量的覆盖误差的第二次测量更敏感。

公开(公告)号：US20150346116A1

公开(公告)日：2015-12-03

申请号：US14825751

申请日：2015-08-13

Applicant: ASML Netherlands B.V.

Inventor： Hendrik Jan Hidde SMILDE ,  Omer Abubaker Omer ADAM

IPC: G01N21/956 ,  G03F7/20

CPC classification number: G01N21/956 ,  G03F7/70633 ,  G03F7/70683 ,  G03F9/7019 ,  Y10T428/24802

Abstract: A lithographic process is used to form a plurality of target structures (T) on a substrate (W). Each target structure comprises overlaid gratings each having a specific overlay bias. Asymmetry (A) of each grating, measured by scatterometry, includes contributions due to (i) the overlay bias, (ii) an overlay error (OV) in the lithographic process and (iii) bottom grating asymmetry within the overlaid gratings. Asymmetry measurements are obtained for three or more target structures having three or more different values of overlay bias (e.g., −d, 0, +d). Knowing the three different overlay bias values and a theoretical curve relationship between overlay error and asymmetry, overlay error (OV) can be calculated while correcting the effect of bottom grating asymmetry. Bias schemes with three and four different biases are disclosed as examples. Gratings with different directions and biases can be interleaved in a composite target structure.

Abstract translation: 使用光刻工艺在衬底（W）上形成多个靶结构（T）。 每个目标结构包括各自具有特定覆盖偏压的重叠光栅。 通过散射测量，每个光栅的不对称（A）包括由于（i）叠加偏压，（ii）光刻工艺中的覆盖误差（OV）和（iii）覆盖光栅内的底部光栅不对称引起的贡献。 对于具有三个或更多个不同重叠偏置值（例如，-d，0，+ d）的三个或更多个目标结构，获得不对称测量。 知道三种不同的叠加偏差值和叠加误差与不对称性之间的理论曲线关系，可以计算出叠加误差（OV），同时校正底​​部光栅不对称的影响。 作为示例公开了具有三种和四种不同偏差的偏置方案。 具有不同方向和偏差的光栅可以在复合目标结构中交错。

公开(公告)号：US20160291481A1

公开(公告)日：2016-10-06

申请号：US15038535

申请日：2014-11-04

Applicant: ASML NETHERLANDS B.V.

Inventor： Hendrik Jan Hidde SMILDE ,  Arie Jeffrey DEN BOEF ,  Omer Abubaker Omer ADAM ,  Martin Jacobus Johan JAK

IPC: G03F7/20

CPC classification number: G03F7/70633

Abstract: A substrate has three or more overlay gratings formed thereon by a lithographic process. Each overlay grating has a known overlay bias. The values of overlay bias include for example two values in a region centered on zero and two values in a region centered on P/2, where P is the pitch of the gratings. Overlay is calculated from asymmetry measurements for the gratings using knowledge of the different overlay bias values and an assumed non-linear relationship between overlay and target asymmetry, thereby to correct for feature asymmetry. The periodic relationship in the region of zero bias and P/2 has gradients of opposite sign. The calculation allows said gradients to have different magnitudes as well as opposite sign. The calculation also provides information on feature asymmetry and other processing effects. This information is used to improve subsequent performance of the measurement process, and/or the lithographic process.

Abstract translation: 衬底具有通过光刻工艺在其上形成的三个或更多个覆盖光栅。 每个覆盖光栅具有已知的叠加偏置。 叠加偏置的值包括例如在以P为中心的区域中的零点和两个值的区域中的两个值，其中P是光栅的间距。 使用不同覆盖偏差值的知识以及覆盖和目标不对称之间的假设非线性关系，对光栅的不对称测量计算叠加，从而校正特征不对称性。 零偏置区域和P / 2区域的周期关系具有相反符号梯度。 该计算允许所述梯度具有不同的幅度以及相反的符号。 该计算还提供了有关特征不对称性和其他处理效果的信息。 该信息用于改进随后的测量过程和/或光刻过程的性能。

公开(公告)号：US20160252820A1

公开(公告)日：2016-09-01

申请号：US15154456

申请日：2016-05-13

Applicant: ASML NETHERLANDS B.V.

Inventor： Guangqing CHEN ,  Eric Richard KENT ,  Jen-Shiang WANG ,  Omer Abubaker Omer ADAM

IPC: G03F7/20 ,  G06F17/50

CPC classification number: G03F7/706 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70641 ,  G03F7/70683 ,  G06F17/5009 ,  G06F17/5068 ,  G06F2217/12 ,  G06F2217/14

Abstract: A method of metrology target design is described. The method includes determining a sensitivity of a parameter for a metrology target design to an optical aberration, determining the parameter for a product design exposed using an optical system of a lithographic apparatus, and determining an impact on the parameter of the metrology target design based on the parameter for the product design and the product of the sensitivity and one or more of the respective aberrations of the optical system.