公开(公告)号：US20170200638A1

公开(公告)日：2017-07-13

申请号：US15313515

申请日：2015-05-13

Applicant: ASML Netherlands B.V.

Inventor： Sander Frederik WUISTER ,  Andre Bernardus JEUNINK ,  Emiel PEETERS

IPC: H01L21/768 ,  C30B1/04 ,  C30B29/58 ,  G03F7/20 ,  G03F7/30

CPC classification number: H01L21/76816 ,  B81C1/00031 ,  B81C1/00396 ,  B81C2201/0149 ,  C09K13/00 ,  C30B1/04 ,  C30B29/58 ,  G03F7/0002 ,  G03F7/0041 ,  G03F7/2004 ,  G03F7/3021 ,  G03F7/70375 ,  H01L21/0271 ,  H01L21/3083 ,  H01L21/76829

Abstract: A method of forming at least one lithography feature, the method including: providing at least one lithography recess on a substrate, the or each lithography recess having at least one side-wall and a base, with the at least one side-wall having a width between portions thereof; providing a self-assemblable block copolymer having first and second blocks in the or each lithography recess; causing the self-assemblable block copolymer to self-assemble into an ordered layer within the or each lithography recess, the ordered layer including at least a first domain of first blocks and a second domain of second blocks; causing the self-assemblable block copolymer to cross-link in a directional manner; and selectively removing the first domain to form lithography features of the second domain within the or each lithography recess.

公开(公告)号：US20150380266A1

公开(公告)日：2015-12-31

申请号：US14769426

申请日：2014-02-26

Applicant: ASML NETHERLANDS B.V.

Inventor： Sander Frederik WUISTER ,  Emiel PEETERS

IPC: H01L21/3105 ,  H01L21/768 ,  H01L21/027

CPC classification number: H01L21/31058 ,  B81C1/00031 ,  B81C2201/0149 ,  G03F7/0002 ,  H01L21/0271 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/76802

Abstract: Causing a self-assemblable block copolymer (BCP) having first and second blocks to migrate from a region surrounding a lithography recess of the substrate and a dummy recess on the substrate to within the lithography recess and the dummy recess, causing the BCP to self-assemble into an ordered layer within the lithography recess, the layer having a first block domain and a second block domain, and selectively removing the first domain to form a lithography feature having the second domain within the lithography recess, wherein a width of the dummy recess is smaller than the minimum width required by the BCP to self-assemble, the dummy recess is within the region of the substrate surrounding the lithography recess from which the BCP is caused to migrate, and the width between portions of a side-wall of the lithography recess is greater than the width between portions of a side-wall of the dummy recess.

Abstract translation: 导致具有第一和第二嵌段的自组装嵌段共聚物（BCP）从基板的光刻凹槽周围的区域和基板上的虚设凹槽迁移到光刻凹槽和虚设凹槽内，使得BCP自对准， 组装成光刻凹槽内的有序层，该层具有第一块区域和第二块区域，并且选择性地去除第一区域以形成在光刻凹槽内具有第二区域的光刻特征，其中虚设凹槽 小于BCP自组装所需的最小宽度，虚拟凹槽在围绕光刻凹槽的基底的区域内，BCP从其移动，并且侧壁的部分之间的宽度在 光刻凹槽大于虚拟凹槽的侧壁的部分之间的宽度。