Method of designing an alignment mark

    公开(公告)号:US12259664B2

    公开(公告)日:2025-03-25

    申请号:US17640899

    申请日:2020-08-17

    Inventor: Jigang Ma Hua Li

    Abstract: A method of configuring a mark having a trench to be etched into a substrate, the method including: obtaining a relation between an extent of height variation across a surface of a probationary layer deposited on a probationary trench of a probationary depth and a thickness of the probationary layer; determining an extent of height variation across the surface of a layer deposited on the mark allowing a metrology system to determine a position of the mark; and configuring the mark by determining a depth of the trench based on the relation, the extent of height variation and the thickness of a process layer to be deposited on the mark.

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