摘要:
An immersion lithographic apparatus is disclosed that includes a fluid supply system configured to supply a fluid, the fluid supply system having a chamber with a plurality of inlet holes in a first side wall and a plurality of outlet holes in a second side wall, the first side wall facing the second side wall, wherein the inlet holes direct fluid entering the chamber in a direction towards areas of the second side wall between the plurality of outlet holes.
摘要:
A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.
摘要:
A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.
摘要:
A method of adjusting speed and/or routing of a part of a movement plan of a table under an immersion fluid supply system of a lithographic apparatus. The method includes splitting the movement plan of the table into a plurality of discrete movements; determining a risk of a bubble of a size greater than a certain size being present in immersion fluid through which a patterned beam of the lithographic apparatus will pass during a certain discrete movement by determining whether the immersion fluid supply system passes over a position at which immersion fluid leaked from the immersion fluid supply system is present; and adjusting the speed and/or routing of a part of the movement plan corresponding to (i) a discrete movement earlier than a discrete movement for which the risk of a bubble is determined, and/or (ii) a discrete movement for which the risk of a bubble is determined.
摘要:
A method of optimizing an apparatus for multi-stage processing of product units such as wafers, the method includes: receiving object data representing one or more parameters measured across the product units and associated with different stages of processing of the product units; and determining fingerprints of variation of the object data across the product units, the fingerprints being associated with different respective stages of processing of the product units. The fingerprints may be determined by decomposing the object data into components using principal component analysis for each different respective stage; analyzing commonality of the fingerprints through the different stages to produce commonality results; and optimizing an apparatus for processing product units based on the commonality results.
摘要:
An immersion lithographic apparatus is disclosed that includes a fluid supply system configured to supply a fluid, the fluid supply system having a chamber with a plurality of inlet holes in a first side wall and a plurality of outlet holes in a second side wall, the first side wall facing the second side wall, wherein the inlet holes direct fluid entering the chamber in a direction towards areas of the second side wall between the plurality of outlet holes.
摘要:
An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized radiation and their relative phase difference.
摘要:
A device manufacturing method, the method comprising: obtaining a measurement data time series of a plurality of substrates on which an exposure step and a process step have been performed; obtaining a status data time series relating to conditions prevailing when the process step was performed on at least some of the plurality of substrates; applying a filter to the measurement data time series and the status data time series to obtain filtered data; and determining, using the filtered data, a correction to be applied in an exposure step performed on a subsequent substrate.
摘要:
A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.
摘要:
An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized radiation and their relative phase difference.