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公开(公告)号：US20210063899A1
公开(公告)日：2021-03-04
申请号：US16961747
申请日：2019-02-12
Applicant: ASML Netherlands B.V.
Inventor： Chunguang Xia , Jonghoon Baek , John Tom Stewart, IV , Andrew David LaForge , Deniz Van Heijnsbergen , David Robert Evans , Nina Vladimirovna Dziomkina , Yue MA
Abstract: In some general aspects, a surface of a structure within a chamber of an extreme ultraviolet (EUV) light source is cleaned using a method. The method includes generating a plasma state of a material that is present at a location adjacent to a non-electrically conductive body that is within the chamber. The generation of the plasma state of the material includes electromagnetically inducing an electric current at the location adjacent the non-electrically conductive body to thereby transform the material that is adjacent the non-electrically conductive body from a first state into the plasma state. The plasma state of the material includes plasma particles, at least some of which are free radicals of the material. The method also includes enabling the plasma particles to pass over the structure surface to remove debris from the structure surface without removing the structure from the chamber of the EUV light source.
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公开(公告)号：US20250085643A1
公开(公告)日：2025-03-13
申请号：US18962837
申请日：2024-11-27
Applicant: ASML Netherlands B.V.
Inventor： Chunguang Xia , Jonghoon Baek , John Tom Stewart, IV , Andrew David LaForge , Deniz Van Heijnsbergen , David Robert Evans , Nina Vladimirovna Dziomkina , Yue Ma
Abstract: In some general aspects, a surface of a structure within a chamber of an extreme ultraviolet (EUV) light source is cleaned using a method. The method includes generating a plasma state of a material that is present at a location adjacent to a non-electrically conductive body that is within the chamber. The generation of the plasma state of the material includes electromagnetically inducing an electric current at the location adjacent the non-electrically conductive body to thereby transform the material that is adjacent the non-electrically conductive body from a first state into the plasma state. The plasma state of the material includes plasma particles, at least some of which are free radicals of the material. The method also includes enabling the plasma particles to pass over the structure surface to remove debris from the structure surface without removing the structure from the chamber of the EUV light source.
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公开(公告)号：US09338870B2
公开(公告)日：2016-05-10
申请号：US14563496
申请日：2014-12-08
Applicant: ASML Netherlands B.V.
Inventor： Yezheng Tao , John Tom Stewart, IV , Daniel J.W. Brown
Abstract: A first remaining plasma that at least partially coincides with a target region is formed; a target including target material in a first spatial distribution to the target region is provided, the target material including material that emits EUV light when converted to plasma; the first remaining plasma and the initial target interact, the interaction rearranging the target material from the first spatial distribution to a shaped target distribution to form a shaped target in the target region, the shaped target including the target material arranged in the shaped spatial distribution; an amplified light beam is directed toward the target region to convert at least some of the target material in the shaped target to a plasma that emits EUV light; and a second remaining plasma is formed in the target region.
Abstract translation: 形成与目标区域至少部分重合的第一剩余等离子体; 提供了包括在目标区域的第一空间分布中的目标材料的目标，所述目标材料包括当转换成等离子体时发射EUV光的材料; 所述第一剩余等离子体和所述初始靶相互作用，所述相互作用将所述目标材料从所述第一空间分布重新排列成成形目标分布，以在所述目标区域中形成成形目标，所述成形靶包括布置在所述成形空间分布中的所述目标材料; 放大的光束被引向目标区域，以将成形靶中的目标材料中的至少一些转换成发射EUV光的等离子体; 并且在目标区域中形成第二剩余等离子体。
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公开(公告)号：US12189313B2
公开(公告)日：2025-01-07
申请号：US17680784
申请日：2022-02-25
Applicant: ASML Netherlands B.V.
Inventor： Chunguang Xia , Jonghoon Baek , John Tom Stewart, IV , Andrew David LaForge , Deniz Van Heijnsbergen , David Robert Evans , Nina Vladimirovna Dziomkina , Yue Ma
Abstract: In some general aspects, a surface of a structure within a chamber of an extreme ultraviolet (EUV) light source is cleaned using a method. The method includes generating a plasma state of a material that is present at a location adjacent to a non-electrically conductive body that is within the chamber. The generation of the plasma state of the material includes electromagnetically inducing an electric current at the location adjacent the non-electrically conductive body to thereby transform the material that is adjacent the non-electrically conductive body from a first state into the plasma state. The plasma state of the material includes plasma particles, at least some of which are free radicals of the material. The method also includes enabling the plasma particles to pass over the structure surface to remove debris from the structure surface without removing the structure from the chamber of the EUV light source.
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公开(公告)号：US20220179328A1
公开(公告)日：2022-06-09
申请号：US17680784
申请日：2022-02-25
Applicant: ASML Netherlands B.V.
Inventor： Chunguang Xia , Jonghoon Baek , John Tom Stewart, IV , Andrew David LaForge , Deniz Van Heijnsbergen , David Robert Evans , Nina Vladimirovna Dziomkina , Yue Ma
Abstract: In some general aspects, a surface of a structure within a chamber of an extreme ultraviolet (EUV) light source is cleaned using a method. The method includes generating a plasma state of a material that is present at a location adjacent to a non-electrically conductive body that is within the chamber. The generation of the plasma state of the material includes electromagnetically inducing an electric current at the location adjacent the non-electrically conductive body to thereby transform the material that is adjacent the non-electrically conductive body from a first state into the plasma state. The plasma state of the material includes plasma particles, at least some of which are free radicals of the material. The method also includes enabling the plasma particles to pass over the structure surface to remove debris from the structure surface without removing the structure from the chamber of the EUV light source.
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Patent Agency Ranking
公开(公告)号：US20190080811A1
公开(公告)日：2019-03-14
申请号：US16186993
申请日：2018-11-12
Applicant: ASML Netherlands B.V.
Inventor： Alexander I. ERSHOV , John Tom Stewart, IV , Igor V. FOMENKOV , Christianus W.J. BERENDSEN
Abstract: Disclosed is an EUV system in which a source control loop is established to maintain and optimize debris flux while not unduly affecting optimum EUV generation conditions. One or more temperature sensors, e.g., thermocouples may be installed in the vessel to measure respective local gas temperatures. The respective local temperature as measured by the one or more thermocouples can be used as one or more inputs to the source control loop. The source control loop may then adjust the laser targeting to permit optimization of debris generation and deposition while not affecting EUV production, thus extending the lifetime of the source and its collector.
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公开(公告)号：US20160255708A1
公开(公告)日：2016-09-01
申请号：US15148255
申请日：2016-05-06
Applicant: ASML Netherlands B.V.
Inventor： Yezheng Tao , John Tom Stewart, IV , Jordan Jur , Daniel Brown
IPC: H05G2/00
Abstract: An initial pulse of radiation is generated; a section of the initial pulse of radiation is extracted to form a modified pulse of radiation, the modified pulse of radiation including a first portion and a second portion, the first portion being temporally connected to the second portion, and the first portion having a maximum energy that is less than a maximum energy of the second portion; the first portion of the modified pulse of radiation is interacted with a target material to form a modified target; and the second portion of the modified pulse of radiation is interacted with the modified target to generate plasma that emits extreme ultraviolet (EUV) light.
Abstract translation: 产生辐射的初始脉冲; 提取辐射的初始脉冲的一部分以形成修改的辐射脉冲，所述修改的辐射脉冲包括第一部分和第二部分，所述第一部分在时间上连接到所述第二部分，并且所述第一部分具有最大值 能量小于第二部分的最大能量; 修改的辐射脉冲的第一部分与靶材料相互作用以形成修饰的靶; 并且修改的辐射脉冲的第二部分与修饰的靶相互作用以产生发射极紫外（EUV）光的等离子体。
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公开(公告)号：US20180330841A1
公开(公告)日：2018-11-15
申请号：US15593732
申请日：2017-05-12
Applicant: ASML Netherlands B.V.
Inventor： Alexander I. Ershov , John Tom Stewart, IV , Igor V. Fomenkov , Christianus W.J. Berendsen
Abstract: Disclosed is an EUV system in which a source control loop is established to maintain and optimize debris flux while not unduly affecting optimum EUV generation conditions. One or more temperature sensors, e.g., thermocouples may be installed in the vessel to measure respective local gas temperatures. The respective local temperature as measured by the one or more thermocouples can be used as one or more inputs to the source control loop. The source control loop may then adjust the laser targeting to permit optimization of debris generation and deposition while not affecting EUV production, thus extending the lifetime of the source and its collector.
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公开(公告)号：US10128017B1
公开(公告)日：2018-11-13
申请号：US15593732
申请日：2017-05-12
Applicant: ASML Netherlands B.V.
Inventor： Alexander I. Ershov , John Tom Stewart, IV , Igor V. Fomenkov , Christianus W. J. Berendsen
Abstract: Disclosed is an EUV system in which a source control loop is established to maintain and optimize debris flux while not unduly affecting optimum EUV generation conditions. One or more temperature sensors, e.g., thermocouples may be installed in the vessel to measure respective local gas temperatures. The respective local temperature as measured by the one or more thermocouples can be used as one or more inputs to the source control loop. The source control loop may then adjust the laser targeting to permit optimization of debris generation and deposition while not affecting EUV production, thus extending the lifetime of the source and its collector.
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公开(公告)号：US09826616B2
公开(公告)日：2017-11-21
申请号：US15148255
申请日：2016-05-06
Applicant: ASML Netherlands B.V.
Inventor： Yezheng Tao , John Tom Stewart, IV , Jordan Jur , Daniel Brown
IPC: H05G2/00
Abstract: An initial pulse of radiation is generated; a section of the initial pulse of radiation is extracted to form a modified pulse of radiation, the modified pulse of radiation including a first portion and a second portion, the first portion being temporally connected to the second portion, and the first portion having a maximum energy that is less than a maximum energy of the second portion; the first portion of the modified pulse of radiation is interacted with a target material to form a modified target; and the second portion of the modified pulse of radiation is interacted with the modified target to generate plasma that emits extreme ultraviolet (EUV) light.
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