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公开(公告)号：US20150268559A1
公开(公告)日：2015-09-24
申请号：US14439476
申请日：2013-10-03
Applicant: ASML NETHERLANDS B.V.
Inventor： Ramin Badie , Vadim Yevgenyevich Banine , Johan Frederik Dijksman , Antonius Theodorus Wilhelmus Kempen , Andrei Mikhailovich Yakunin , Hendrikus Robertus Marie Van Greevenbroek , Koen Gerhardus Winkels
CPC classification number: G03F7/70033 , H05G2/003 , H05G2/006 , H05G2/008
Abstract: A radiation source (e.g., LPP— laser produced plasma source) for generation of extreme UV (EUV) radiation has at least two fuel particle streams having different trajectories. Each stream is directed to cross the path of an excitation (laser) beam focused at a plasma formation region, but the trajectories are spaced apart at the plasma formation region, and the streams phased, so that only one stream has a fuel particle in the plasma formation region at any time, and so that when a fuel particle from one stream is generating plasma and EUV radiation at the plasma generation region, other fuel particles are sufficiently spaced so as to be substantially unaffected by the plasma. The arrangement permits potential doubling of the radiation intensity achievable for a particular fuel particle size.
Abstract translation: 用于产生极端UV（EUV）辐射的辐射源（例如，LPP激光产生的等离子体源）具有至少两个具有不同轨迹的燃料粒子流。 每个流被引导以跨过等离子体形成区域聚焦的激发（激光）束的路径，但是轨迹在等离子体形成区域处被间隔开，并且流被相位化，使得仅一条流在 等离子体形成区域，并且使得当来自一个流的燃料粒子在等离子体产生区域产生等离子体和EUV辐射时，其它燃料颗粒被充分间隔开，以致基本上不受等离子体的影响。 该布置允许对于特定燃料粒子尺寸可实现的辐射强度的潜在加倍。
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公开(公告)号：US20180364580A1
公开(公告)日：2018-12-20
申请号：US16061847
申请日：2016-12-15
Applicant: ASML Netherlands B.V.
Inventor： Johan Frederik Dijksman , Bastiaan Lambertus Wilhelmus Marinus van de Ven , Koen Gerhardus Winkels , Theodorus Wilhelmus Driessen , Georgiy O. Vaschenko , Peter Michael Baumgart , Wilhelmus Henricus Theodorus Maria Aangenent , Jan Okke Nieuwenkamp , Wim Ronald Kampinga , Jari Ruotsalainen
CPC classification number: G03F7/70033 , H05G2/006 , H05G2/008
Abstract: Droplet generators, such as used in an EUV radiation source, and associated EUV radiation sources and lithographic apparatuses. A droplet generator can include a nozzle assembly to emit the fuel as droplets, the nozzle assembly being within a pressurized environment at substantially the same pressure as the fuel pressure within the droplet generator. A droplet generator can include an actuator in contact with and biased against a pump chamber by means of a biasing mechanism having an actuator support biased against the actuator. The actuator acts on the fuel within the pump chamber to create droplets. The actuator support has a material with a greater coefficient of thermal expansion than its surrounding structure, such that it is moveable within the surrounding structure at ambient temperature, but expands against the surrounding structure at an operating temperature, so as to clamp the actuator support against the surrounding structure at the operating temperature.
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公开(公告)号：US11709988B2
公开(公告)日：2023-07-25
申请号：US17416314
申请日：2019-12-13
Applicant: ASML NETHERLANDS B.V.
IPC: G06F30/30 , G03F7/20 , G06F30/28 , G06F30/398 , G03F7/00 , G06F30/3308 , G06F119/18 , G06F111/10
CPC classification number: G06F30/398 , G03F7/705 , G06F30/28 , G06F30/3308 , G03F7/70608 , G03F7/70625 , G06F2111/10 , G06F2119/18
Abstract: A method for determining a deformation of a resist in a patterning process. The method involves obtaining a resist deformation model of a resist having a pattern, the resist deformation model configured to simulate a fluid flow of the resist due to capillary forces acting on a contour of at least one feature of the pattern; and determining, via the resist deformation model, a deformation of a resist pattern to be developed based on an input pattern to the resist deformation model.
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公开(公告)号：US10481498B2
公开(公告)日：2019-11-19
申请号：US16061847
申请日：2016-12-15
Applicant: ASML Netherlands B.V.
Inventor： Johan Frederik Dijksman , Bastiaan Lambertus Wilhelmus Marinus van de Ven , Koen Gerhardus Winkels , Theodorus Wilhelmus Driessen , Georgiy O. Vaschenko , Peter Michael Baumgart , Wilhelmus Henricus Theodorus Maria Aangenent , Jan Okke Nieuwenkamp , Wim Ronald Kampinga , Jari Ruotsalainen
Abstract: Droplet generators, such as used in an EUV radiation source, and associated EUV radiation sources and lithographic apparatuses. A droplet generator can include a nozzle assembly to emit the fuel as droplets, the nozzle assembly being within a pressurized environment at substantially the same pressure as the fuel pressure within the droplet generator. A droplet generator can include an actuator in contact with and biased against a pump chamber by means of a biasing mechanism having an actuator support biased against the actuator. The actuator acts on the fuel within the pump chamber to create droplets. The actuator support has a material with a greater coefficient of thermal expansion than its surrounding structure, such that it is moveable within the surrounding structure at ambient temperature, but expands against the surrounding structure at an operating temperature, so as to clamp the actuator support against the surrounding structure at the operating temperature.
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Patent Agency Ranking
公开(公告)号：US10904994B2
公开(公告)日：2021-01-26
申请号：US16671348
申请日：2019-11-01
Applicant: ASML Netherlands B.V.
Inventor： Koen Gerhardus Winkels , Georgiy O. Vaschenko , Theodorus Wilhelmus Driessen , Johan Frederik Dijksman , Bastiaan Lambertus Wilhelmus Marinus van de Ven , Wilhelmus Henricus Theodorus Maria Aangenent
Abstract: A supply system for an extreme ultraviolet (EUV) light source includes an apparatus configured to be fluidly coupled to a reservoir configured to contain target material that produces EUV light in a plasma state, the apparatus including two or more target formation units, each one of the target formation units including: a nozzle structure configured to receive the target material from the reservoir, the nozzle structure including an orifice configured to emit the target material to a plasma formation location. The supply system further includes a control system configured to select a particular one of the target formation units for emitting the target material to the plasma formation location. An apparatus for a supply system of an extreme ultraviolet (EUV) light source includes a MEMS system fabricated in a semiconductor device fabrication technology, and the MEMS system including a nozzle structure configured to be fluidly coupled to a reservoir.
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公开(公告)号：US09442380B2
公开(公告)日：2016-09-13
申请号：US14439476
申请日：2013-10-03
Applicant: ASML Netherlands B.V.
Inventor： Ramin Badie , Vadim Yevgenyevich Banine , Johan Frederik Dijksman , Antonius Theodorus Wilhelmus Kempen , Andrei Mikhailovich Yakunin , Hendrikus Robertus Marie Van Greevenbroek , Koen Gerhardus Winkels
CPC classification number: G03F7/70033 , H05G2/003 , H05G2/006 , H05G2/008
Abstract: A radiation source (e.g., LPP—laser produced plasma source) for generation of extreme UV (EUV) radiation has at least two fuel particle streams having different trajectories. Each stream is directed to cross the path of an excitation (laser) beam focused at a plasma formation region, but the trajectories are spaced apart at the plasma formation region, and the streams phased, so that only one stream has a fuel particle in the plasma formation region at any time, and so that when a fuel particle from one stream is generating plasma and EUV radiation at the plasma generation region, other fuel particles are sufficiently spaced so as to be substantially unaffected by the plasma. The arrangement permits potential doubling of the radiation intensity achievable for a particular fuel particle size.
Abstract translation: 用于产生极端UV（EUV）辐射的辐射源（例如，LPP激光产生的等离子体源）具有至少两个具有不同轨迹的燃料粒子流。 每个流被引导以跨过等离子体形成区域聚焦的激发（激光）束的路径，但是轨迹在等离子体形成区域处被间隔开，并且流被相位化，使得仅一条流在 等离子体形成区域，并且使得当来自一个流的燃料粒子在等离子体产生区域产生等离子体和EUV辐射时，其它燃料颗粒被充分间隔开，以致基本上不受等离子体的影响。 该布置允许对于特定燃料粒子尺寸可实现的辐射强度的潜在加倍。
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公开(公告)号：US12242204B2
公开(公告)日：2025-03-04
申请号：US17775361
申请日：2020-10-16
Applicant: ASML NETHERLANDS B.V.
Inventor： Ruud Antonius Catharina Maria Beerens , Koen Gerhardus Winkels , Dirk Willem Harberts , Lucas Henricus Johannes Stevens , Dennis Dominic Van Der Voort , Edwin Johannes Cornelis Bos , George Alois Leonie Leenknegt , Nicolaas Ten Kate
IPC: G03F7/20 , G03F7/00 , H01L21/67 , H01L21/687
Abstract: A substrate support configured to support a substrate. The substrate support has a plurality of burls protruding from a base surface of the substrate support. The burls have distal ends for supporting a lower surface of the substrate with a gap between the base surface of the substrate support and the lower surface of the substrate. The substrate support has a liquid supply channel configured to supply a conductive liquid to the gap so as to bridge the gap between the base surface of the substrate support and the lower surface of the substrate, to allow charge to pass between the substrate support and the substrate. The substrate support has a controlled electrical potential such that charge distribution at the lower surface of the substrate can be manipulated.
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公开(公告)号：US11914942B2
公开(公告)日：2024-02-27
申请号：US18206029
申请日：2023-06-05
Applicant: ASML NETHERLANDS B.V.
IPC: G06F30/30 , G06F30/28 , G03F7/00 , G06F30/398 , G06F30/3308 , G06F119/18 , G06F111/10
CPC classification number: G06F30/398 , G03F7/705 , G06F30/28 , G06F30/3308 , G03F7/70608 , G03F7/70625 , G06F2111/10 , G06F2119/18
Abstract: A method for determining a deformation of a resist in a patterning process. The method involves obtaining a resist deformation model of a resist having a pattern, the resist deformation model configured to simulate a fluid flow of the resist due to capillary forces acting on a contour of at least one feature of the pattern; and determining, via the resist deformation model, a deformation of a resist pattern to be developed based on an input pattern to the resist deformation model.
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公开(公告)号：US20180368242A1
公开(公告)日：2018-12-20
申请号：US15962307
申请日：2018-04-25
Applicant: ASML Netherlands B.V.
Inventor： Koen Gerhardus Winkels , Georgiy O. Vaschenko , Theodorus Wilhelmus Driessen , Johan Frederik Dijksman , Bastiaan Lambertus Wilhelmus Marinus van de Ven , Wilhelmus Henricus Theodorus Maria Aangenent
Abstract: A supply system for an extreme ultraviolet (EUV) light source includes an apparatus configured to be fluidly coupled to a reservoir configured to contain target material that produces EUV light in a plasma state, the apparatus including two or more target formation units, each one of the target formation units including: a nozzle structure configured to receive the target material from the reservoir, the nozzle structure including an orifice configured to emit the target material to a plasma formation location. The supply system further includes a control system configured to select a particular one of the target formation units for emitting the target material to the plasma formation location. An apparatus for a supply system of an extreme ultraviolet (EUV) light source includes a MEMS system fabricated in a semiconductor device fabrication technology, and the MEMS system including a nozzle structure configured to be fluidly coupled to a reservoir.
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