公开(公告)号：US11592753B2

公开(公告)日：2023-02-28

申请号：US17715112

申请日：2022-04-07

Applicant: ASML NETHERLANDS B.V.

Inventor： Weitian Kou ,  Alexander Ypma ,  Marc Hauptmann ,  Michiel Kupers ,  Lydia Marianna Vergaij-Huizer ,  Erik Johannes Maria Wallerbos ,  Erik Henri Adriaan Delvigne ,  Willem Seine Christian Roelofs ,  Hakki Ergün Cekli ,  Stefan Cornelis Theodorus Van Der Sanden ,  Cédric Désiré Grouwstra ,  David Frans Simon Deckers ,  Manuel Giollo ,  Iryna Dovbush

IPC: G03F7/20

Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.

公开(公告)号：US11782349B2

公开(公告)日：2023-10-10

申请号：US18100662

申请日：2023-01-24

Applicant: ASML NETHERLANDS B.V.

Inventor： Weitian Kou ,  Alexander Ypma ,  Marc Hauptmann ,  Michiel Kupers ,  Lydia Marianna Vergaij-Huizer ,  Erik Johannes Maria Wallerbos ,  Erik Henri Adriaan Delvigne ,  Willem Seine Christian Roelofs ,  Hakki Ergün Cekli ,  Stefan Cornelis Theodorus Van Der Sanden ,  Cédric Désiré Grouwstra ,  David Frans Simon Deckers ,  Manuel Giollo ,  Iryna Dovbush

IPC: G03F7/20 ,  G03F7/00

CPC classification number: G03F7/70508 ,  G03F7/705 ,  G03F7/70633

Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.

公开(公告)号：US11327407B2

公开(公告)日：2022-05-10

申请号：US17102850

申请日：2020-11-24

Applicant: ASML NETHERLANDS B.V.

Inventor： Weitian Kou ,  Alexander Ypma ,  Marc Hauptmann ,  Michiel Kupers ,  Lydia Marianna Vergaij-Huizer ,  Erik Johannes Maria Wallerbos ,  Erik Henri Adriaan Delvigne ,  Willem Seine Christian Roelofs ,  Hakki Ergün Cekli ,  Stefan Cornelis Theodorus Van Der Sanden ,  Cédric Désiré Grouwstra ,  David Frans Simon Deckers ,  Manuel Giollo ,  Iryna Dovbush

IPC: G03F7/20

Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.

公开(公告)号：US11669017B2

公开(公告)日：2023-06-06

申请号：US16762982

申请日：2018-11-09

Applicant: ASML NETHERLANDS B.V.

Inventor： Roy Werkman ,  Bijoy Rajasekharan ,  Lydia Marianna Vergaij-Huizer ,  Jochem Sebastiaan Wildenberg ,  Ronald Van Ittersum ,  Pieter Gerardus Jacobus Smorenberg ,  Robertus Wilhelmus Van Der Heijden ,  Xiuhong Wei ,  Hadi Yagubizade

IPC: G03F7/20

CPC classification number: G03F7/70458 ,  G03F7/70616

Abstract: A method for determining a plurality of corrections for control of at least one manufacturing apparatus used in a manufacturing process for providing product structures to a substrate in a plurality of layers, the method including: determining the plurality of corrections including a correction for each layer, based on an actuation potential of the applicable manufacturing apparatus used in the formation of each layer, wherein the determining includes determining corrections for each layer simultaneously in terms of a matching parameter.