公开(公告)号：US11003099B2

公开(公告)日：2021-05-11

申请号：US16593132

申请日：2019-10-04

Applicant: ASML Netherlands B.V.

Inventor： Maurits Van Der Schaar ,  Murat Bozkurt ,  Patrick Warnaar ,  Stefan Cornelis Theodorus Van Der Sanden

IPC: G03F9/00 ,  G03F7/20 ,  G01N21/956

Abstract: A method and apparatus are described for providing an accurate and robust measurement of a lithographic characteristic or metrology parameter. The method includes providing a range or a plurality of values for each of a plurality of metrology parameters of a metrology target, providing a constraint for each of the plurality of metrology parameters, and calculating, by a processor to optimize/modify these parameters within the range of the plurality of values, resulting in a plurality of metrology target designs having metrology parameters meeting the constraints.

公开(公告)号：US09291916B2

公开(公告)日：2016-03-22

申请号：US14613687

申请日：2015-02-04

Applicant: ASML Netherlands B.V.

Inventor： Stefan Cornelis Theodorus Van Der Sanden ,  Richard Johannes Franciscus Van Haren ,  Hubertus Johannes Gertrudus Simons ,  Remi Daniel Marie Edart ,  Xiuhong Wei ,  Irina Lyulina ,  Michael Kubis

IPC: G03F7/20 ,  G03F9/00

CPC classification number: G03F7/70616 ,  G03F7/70141 ,  G03F7/70633 ,  G03F9/7003 ,  G03F9/7088

Abstract: A substrate is loaded onto a substrate support of a lithographic apparatus, after which the apparatus measures locations of substrate alignment marks. These measurements define first correction information allowing the apparatus to apply a pattern at one or more desired locations on the substrate. Additional second correction information is used to enhance accuracy of pattern positioning, in particular to correct higher order distortions of a nominal alignment grid. The second correction information may be based on measurements of locations of alignment marks made when applying a previous pattern to the same substrate. The second correction information may alternatively or in addition be based on measurements made on similar substrates that have been patterned prior to the current substrate.

公开(公告)号：US11592753B2

公开(公告)日：2023-02-28

申请号：US17715112

申请日：2022-04-07

Applicant: ASML NETHERLANDS B.V.

Inventor： Weitian Kou ,  Alexander Ypma ,  Marc Hauptmann ,  Michiel Kupers ,  Lydia Marianna Vergaij-Huizer ,  Erik Johannes Maria Wallerbos ,  Erik Henri Adriaan Delvigne ,  Willem Seine Christian Roelofs ,  Hakki Ergün Cekli ,  Stefan Cornelis Theodorus Van Der Sanden ,  Cédric Désiré Grouwstra ,  David Frans Simon Deckers ,  Manuel Giollo ,  Iryna Dovbush

IPC: G03F7/20

Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.

公开(公告)号：US20200033741A1

公开(公告)日：2020-01-30

申请号：US16593132

申请日：2019-10-04

Applicant: ASML Netherlands B.V

Inventor： Maurits Van Der Schaar ,  Murat Bozkurt ,  Patrick Warnaar ,  Stefan Cornelis Theodorus Van Der Sanden

IPC: G03F9/00 ,  G03F7/20 ,  G01N21/956

Abstract: A method and apparatus are described for providing an accurate and robust measurement of a lithographic characteristic or metrology parameter. The method includes providing a range or a plurality of values for each of a plurality of metrology parameters of a metrology target, providing a constraint for each of the plurality of metrology parameters, and calculating, by a processor to optimize/modify these parameters within the range of the plurality of values, resulting in a plurality of metrology target designs having metrology parameters meeting the constraints.

公开(公告)号：US09753377B2

公开(公告)日：2017-09-05

申请号：US14420311

申请日：2013-06-27

Applicant: ASML Netherlands B.V.

Inventor： Hakki Ergun Cekli ,  Irina Lyulina ,  Manfred Gawein Tenner ,  Richard Johannes Franciscus Van Haren ,  Stefan Cornelis Theodorus Van Der Sanden

IPC: G03B27/32 ,  G03B27/74 ,  G03F7/20 ,  G03F9/00

CPC classification number: G03F7/70258 ,  G03F7/70483 ,  G03F7/70616 ,  G03F7/70633 ,  G03F9/7003 ,  G03F9/7019

Abstract: A deformation pattern recognition method including providing one or more deformation patterns, each deformation pattern being associated with a deformation of a substrate that may be caused by a processing device; transferring a first pattern to a substrate, the first pattern including at least N alignment marks, wherein each alignment mark is positioned at a respective predefined nominal position; processing the substrate; measuring a position of N alignment marks and determining an alignment mark displacement for the N alignment marks by comparing the respective nominal position with the respective measured position; fitting at least one deformation pattern to the measured alignment mark displacements; determining an accuracy value for each fitted deformation pattern, the accuracy value being representative of the accuracy of the corresponding fit; using the determined accuracy value, determining whether an associated deformation pattern is present.

公开(公告)号：US10025193B2

公开(公告)日：2018-07-17

申请号：US15109784

申请日：2014-10-23

Applicant: ASML Netherlands B.V.

Inventor： Hakki Ergün Cekli ,  Xing Lan Liu ,  Daan Maurits Slotboom ,  Wim Tjibbo Tel ,  Stefan Cornelis Theodorus Van Der Sanden ,  Richard Johannes Franciscus Van Haren

IPC: G03F7/20 ,  G03F9/00

Abstract: A lithographic apparatus applies a pattern repeatedly to target portions across a substrate. Prior to applying the pattern an alignment sensor measures positions of marks in the plane of the substrate and a level sensor measures height deviations in a direction normal to the plane of the substrate. The apparatus applies the pattern to the substrate while positioning the applied pattern using the positions measured by the alignment sensor and using the height deviations measured by the level sensor. The apparatus is further arranged to calculate and apply corrections in the positioning of the applied pattern, based on derivatives of the measured height deviations. The corrections may be calculated on an intrafield and/or interfield basis. The corrections may be based on changes between the observed height deviations and height deviations measured previously on the same substrate.

公开(公告)号：US20150205213A1

公开(公告)日：2015-07-23

申请号：US14420311

申请日：2013-06-27

Applicant: ASML NETHERLANDS B.V.

Inventor： Hakki Ergun Cekli ,  Irina Lyulina ,  Manfred Gawein Tenner ,  Richard Johannes Franciscus Van Haren ,  Stefan Cornelis Theodorus Van Der Sanden

IPC: G03F7/20 ,  G03F9/00

CPC classification number: G03F7/70258 ,  G03F7/70483 ,  G03F7/70616 ,  G03F7/70633 ,  G03F9/7003 ,  G03F9/7019

Abstract: A deformation pattern recognition method including providing one or more deformation patterns, each deformation pattern being associated with a deformation of a substrate that may be caused by a processing device; transferring a first pattern to a substrate, the first pattern including at least N alignment marks, wherein each alignment mark is positioned at a respective predefined nominal position; processing the substrate; measuring a position of N alignment marks and determining an alignment mark displacement for the N alignment marks by comparing the respective nominal position with the respective measured position; fitting at least one deformation pattern to the measured alignment mark displacements; determining an accuracy value for each fitted deformation pattern, the accuracy value being representative of the accuracy of the corresponding fit; using the determined accuracy value, determining whether an associated deformation pattern is present.

Abstract translation: 一种变形图案识别方法，包括提供一个或多个变形图案，每个变形图案与可由处理装置引起的基板的变形相关联; 将第一图案转印到基板，所述第一图案至少包括N个对准标记，其中每个对准标记位于相应的预定标称位置; 处理基板; 通过将相应的标称位置与相应的测量位置进行比较来测量N个对准标记的位置并确定N个对准标记的对准标记位移; 将至少一个变形图案拟合到所测量的对准标记位移; 确定每个拟合变形模式的精度值，精度值代表相应拟合精度; 使用所确定的精度值，确定是否存在相关联的变形模式。

公开(公告)号：US11782349B2

公开(公告)日：2023-10-10

申请号：US18100662

申请日：2023-01-24

Applicant: ASML NETHERLANDS B.V.

Inventor： Weitian Kou ,  Alexander Ypma ,  Marc Hauptmann ,  Michiel Kupers ,  Lydia Marianna Vergaij-Huizer ,  Erik Johannes Maria Wallerbos ,  Erik Henri Adriaan Delvigne ,  Willem Seine Christian Roelofs ,  Hakki Ergün Cekli ,  Stefan Cornelis Theodorus Van Der Sanden ,  Cédric Désiré Grouwstra ,  David Frans Simon Deckers ,  Manuel Giollo ,  Iryna Dovbush

IPC: G03F7/20 ,  G03F7/00

CPC classification number: G03F7/70508 ,  G03F7/705 ,  G03F7/70633

Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.

公开(公告)号：US11493851B2

公开(公告)日：2022-11-08

申请号：US17482630

申请日：2021-09-23

Applicant: ASML Netherlands B.V.

Inventor： Hakki Ergün Cekli ,  Xing Lan Liu ,  Stefan Cornelis Theodorus Van Der Sanden ,  Richard Johannes Franciscus Van Haren

IPC: G03F7/20 ,  G03F9/00

Abstract: A method includes exposing number of fields on a substrate, obtaining data about a field and correcting exposure of the field in subsequent exposures. The method includes defining one or more sub-fields of the field based on the obtained data. Data relating to each sub-field is processed to produce sub-field correction information. A subsequent exposure of the one or more sub-fields is corrected using the sub-field correction information. By controlling a lithographic apparatus by reference to data of a particular sub-field within a field, overlay error can be reduced or minimized for a critical feature, rather than being averaged over the whole field. By controlling a lithographic apparatus with reference to a sub-field rather than only the whole field, a residual error can be reduced in each sub-field.

公开(公告)号：US11327407B2

公开(公告)日：2022-05-10

申请号：US17102850

申请日：2020-11-24

Applicant: ASML NETHERLANDS B.V.

Inventor： Weitian Kou ,  Alexander Ypma ,  Marc Hauptmann ,  Michiel Kupers ,  Lydia Marianna Vergaij-Huizer ,  Erik Johannes Maria Wallerbos ,  Erik Henri Adriaan Delvigne ,  Willem Seine Christian Roelofs ,  Hakki Ergün Cekli ,  Stefan Cornelis Theodorus Van Der Sanden ,  Cédric Désiré Grouwstra ,  David Frans Simon Deckers ,  Manuel Giollo ,  Iryna Dovbush

IPC: G03F7/20

Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.