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    CLEANING A STRUCTURE SURFACE IN AN EUV CHAMBER
    3.
    发明申请
    CLEANING A STRUCTURE SURFACE IN AN EUV CHAMBER 有权

    公开(公告)号：US20210063899A1

    公开(公告)日：2021-03-04

    申请号：US16961747

    申请日：2019-02-12

    Applicant: ASML Netherlands B.V.

    Inventor： Chunguang Xia ,  Jonghoon Baek ,  John Tom Stewart, IV ,  Andrew David LaForge ,  Deniz Van Heijnsbergen ,  David Robert Evans ,  Nina Vladimirovna Dziomkina ,  Yue MA

    IPC: G03F7/20 ,  H01J37/32 ,  H05G2/00 ,  H05H1/46

    Abstract: In some general aspects, a surface of a structure within a chamber of an extreme ultraviolet (EUV) light source is cleaned using a method. The method includes generating a plasma state of a material that is present at a location adjacent to a non-electrically conductive body that is within the chamber. The generation of the plasma state of the material includes electromagnetically inducing an electric current at the location adjacent the non-electrically conductive body to thereby transform the material that is adjacent the non-electrically conductive body from a first state into the plasma state. The plasma state of the material includes plasma particles, at least some of which are free radicals of the material. The method also includes enabling the plasma particles to pass over the structure surface to remove debris from the structure surface without removing the structure from the chamber of the EUV light source.

    Cleaning a structure surface in an EUV chamber
    6.
    发明授权
    Cleaning a structure surface in an EUV chamber 有权

    公开(公告)号：US12189313B2

    公开(公告)日：2025-01-07

    申请号：US17680784

    申请日：2022-02-25

    Applicant: ASML Netherlands B.V.

    Inventor： Chunguang Xia ,  Jonghoon Baek ,  John Tom Stewart, IV ,  Andrew David LaForge ,  Deniz Van Heijnsbergen ,  David Robert Evans ,  Nina Vladimirovna Dziomkina ,  Yue Ma

    IPC: G03F7/00 ,  H01J37/32 ,  H05H1/46

    Abstract: In some general aspects, a surface of a structure within a chamber of an extreme ultraviolet (EUV) light source is cleaned using a method. The method includes generating a plasma state of a material that is present at a location adjacent to a non-electrically conductive body that is within the chamber. The generation of the plasma state of the material includes electromagnetically inducing an electric current at the location adjacent the non-electrically conductive body to thereby transform the material that is adjacent the non-electrically conductive body from a first state into the plasma state. The plasma state of the material includes plasma particles, at least some of which are free radicals of the material. The method also includes enabling the plasma particles to pass over the structure surface to remove debris from the structure surface without removing the structure from the chamber of the EUV light source.

    CLEANING A STRUCTURE SURFACE IN AN EUV CHAMBER
    8.
    发明申请
    CLEANING A STRUCTURE SURFACE IN AN EUV CHAMBER 有权

    公开(公告)号：US20220179328A1

    公开(公告)日：2022-06-09

    申请号：US17680784

    申请日：2022-02-25

    Applicant: ASML Netherlands B.V.

    Inventor： Chunguang Xia ,  Jonghoon Baek ,  John Tom Stewart, IV ,  Andrew David LaForge ,  Deniz Van Heijnsbergen ,  David Robert Evans ,  Nina Vladimirovna Dziomkina ,  Yue Ma

    IPC: G03F7/20 ,  H01J37/32 ,  H05G2/00 ,  H05H1/46

    Abstract: In some general aspects, a surface of a structure within a chamber of an extreme ultraviolet (EUV) light source is cleaned using a method. The method includes generating a plasma state of a material that is present at a location adjacent to a non-electrically conductive body that is within the chamber. The generation of the plasma state of the material includes electromagnetically inducing an electric current at the location adjacent the non-electrically conductive body to thereby transform the material that is adjacent the non-electrically conductive body from a first state into the plasma state. The plasma state of the material includes plasma particles, at least some of which are free radicals of the material. The method also includes enabling the plasma particles to pass over the structure surface to remove debris from the structure surface without removing the structure from the chamber of the EUV light source.

    CLEANING A STRUCTURE SURFACE IN AN EUV CHAMBER
    10.
    发明申请
    CLEANING A STRUCTURE SURFACE IN AN EUV CHAMBER 有权

    公开(公告)号：US20250085643A1

    公开(公告)日：2025-03-13

    申请号：US18962837

    申请日：2024-11-27

    Applicant: ASML Netherlands B.V.

    Inventor： Chunguang Xia ,  Jonghoon Baek ,  John Tom Stewart, IV ,  Andrew David LaForge ,  Deniz Van Heijnsbergen ,  David Robert Evans ,  Nina Vladimirovna Dziomkina ,  Yue Ma

    IPC: G03F7/00 ,  H01J37/32 ,  H05H1/46

    Abstract: In some general aspects, a surface of a structure within a chamber of an extreme ultraviolet (EUV) light source is cleaned using a method. The method includes generating a plasma state of a material that is present at a location adjacent to a non-electrically conductive body that is within the chamber. The generation of the plasma state of the material includes electromagnetically inducing an electric current at the location adjacent the non-electrically conductive body to thereby transform the material that is adjacent the non-electrically conductive body from a first state into the plasma state. The plasma state of the material includes plasma particles, at least some of which are free radicals of the material. The method also includes enabling the plasma particles to pass over the structure surface to remove debris from the structure surface without removing the structure from the chamber of the EUV light source.

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