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    Method for adjusting a target feature in a model of a patterning process based on local electric fields
    1.
    发明授权
    Method for adjusting a target feature in a model of a patterning process based on local electric fields 有权

    公开(公告)号：US12189308B2

    公开(公告)日：2025-01-07

    申请号：US18129169

    申请日：2023-03-31

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Richard Johannes Franciscus Van Haren ,  Leon Paul Van Dijk ,  Oktay Yildirim ,  Orion Jonathan Pierre Mouraille

    IPC: G03F7/00 ,  G03F1/70

    Abstract: A method for determining a target feature in a model of a patterning process based on local electric fields estimated for the patterning process. The method includes obtaining a mask stack region of interest. The mask stack region of interest has one or more characteristics associated with propagation of electromagnetic waves through the mask stack region of interest. The mask stack region of interest includes the target feature. The method includes estimating a local electric field based on the one or more characteristics associated with the propagation of electromagnetic waves through the mask stack region of interest. The local electric field is estimated for a portion of the mask stack region of interest in proximity to the target feature. The method includes determining the target feature based on the estimated local electric field.

    Method for adjusting a target feature in a model of a patterning process based on local electric fields
    3.
    发明授权
    Method for adjusting a target feature in a model of a patterning process based on local electric fields 有权

    公开(公告)号：US11619884B2

    公开(公告)日：2023-04-04

    申请号：US17298640

    申请日：2019-11-12

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Richard Johannes Franciscus Van Haren ,  Leon Paul Van Dijk ,  Oktay Yildirim ,  Orion Jonathan Pierre Mouraille

    IPC: G03F7/20 ,  G03F1/70

    Abstract: A method for determining a target feature in a model of a patterning process based on local electric fields estimated for the patterning process is described. The method includes obtaining a mask stack region of interest. The mask stack region of interest has one or more characteristics associated with propagation of electromagnetic waves through the mask stack region of interest. The mask stack region of interest includes the target feature. The method includes estimating a local electric field based on the one or more characteristics associated with the propagation of electromagnetic waves through the mask stack region of interest. The local electric field is estimated for a portion of the mask stack region of interest in proximity to the target feature. The method includes determining the target feature based on the estimated local electric field.

    METHODS OF PROVIDING PATTERNED CHEMICAL EPITAXY TEMPLATES FOR SELF-ASSEMBLABLE BLOCK COPOLYMERS FOR USE IN DEVICE LITHOGRAPHY
    6.
    发明申请
    METHODS OF PROVIDING PATTERNED CHEMICAL EPITAXY TEMPLATES FOR SELF-ASSEMBLABLE BLOCK COPOLYMERS FOR USE IN DEVICE LITHOGRAPHY 有权
    提供用于自组装嵌段共聚物的图案化学外延模板用于器件平台的方法

    公开(公告)号：US20150010869A1

    公开(公告)日：2015-01-08

    申请号：US14380911

    申请日：2013-02-06

    Applicant: ASML Netherlands B.V.

    Inventor： Emiel Peeters ,  Wilhelmus Sebastianus Marcus Maria Ketelaars ,  Sander Frederik Wuister ,  Roelof Koole ,  Christianus Martinus Van Heesch ,  Aurelie Marie Andree Brizard ,  Henri Marie Joseph Boots ,  Thanh Trung Nguyen ,  Oktay Yildirim

    IPC: G03F7/20 ,  G03F7/038

    CPC classification number: G03F7/20 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/038 ,  G03F7/2002

    Abstract: A method of forming a patterned chemical epitaxy template, for orientation of a self-assemblable block copolymer including first and second polymer blocks, on a surface of a substrate, the method including applying a primer layer of a primer composition to the surface, the primer composition including a first polymer moiety having a chemical affinity with the first polymer blocks and a second polymer moiety having a chemical affinity with the second polymer blocks, selectively exposing the surface, the primer layer and any overlying layer to actinic radiation to provide exposed and unexposed regions, to render labile the first polymer moiety in the exposed region, and removing the labile first polymer moiety from the exposed region to deplete the primer layer surface in the exposed region of first polymer moiety to form the patterned chemical epitaxy template.

    Abstract translation: 一种形成图案化学外延模板的方法，用于在基材表面上包含第一和第二聚合物嵌段的自组装嵌段共聚物的取向，该方法包括将底漆组合物的底漆层施加到表面，引物 组合物，其包含与第一聚合物嵌段具有化学亲合力的第一聚合物部分和与第二聚合物嵌段具有化学亲合力的第二聚合物部分，选择性地将表面，底漆层和任何上覆层暴露于光化辐射以提供暴露和未曝光 使得暴露区域中的第一聚合物部分不稳定，以及从暴露区域除去不稳定的第一聚合物部分，以消除第一聚合物部分的暴露区域中的底漆层表面，以形成图案化的化学外延模板。

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