公开(公告)号：US20140245948A1

公开(公告)日：2014-09-04

申请号：US14345891

申请日：2012-10-02

Applicant: ASML Netherlands B.V.

Inventor： Thanh Trung Nguyen ,  Jozef Maria Finders ,  Wilhelmus Sebastianus Marcus Maria Ketelaars ,  Sander Frederik Wuister ,  Eddy Cornelis Antonius Van Der Heijden ,  Hieronymus Johannus Christiaan Meessen ,  Roelof Koole ,  Emiel Peeters ,  Christianus Martinus Van Heesch ,  Aurelie Marie Andree Brizard ,  Henri Marie Joseph Boots ,  Tamara Druzhinina ,  Jessica Marggaretha De Ruiter

IPC: C30B1/12

CPC classification number: C30B1/12 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y30/00 ,  G03F7/0002 ,  H01L21/0337 ,  Y10T117/10

Abstract: A graphoepitaxy template to align a self-assembled block polymer adapted to self-assemble into a 2-D array having parallel rows of discontinuous first domains extending parallel to a first axis, mutually spaced along an orthogonal second axis, and separated by a continuous second domain. The graphoepitaxy template has first and second substantially parallel side walls extending parallel to and defining the first axis and mutually spaced along the second axis to provide a compartment to hold at least one row of discontinuous first domains of the self-assembled block copolymer on the substrate between and parallel to the side walls, and separated therefrom by a continuous second domain. The compartment has a graphoepitaxial nucleation feature arranged to locate at least one of the discontinuous first domains at a specific position within the compartment. Methods for forming the graphoepitaxy template and its use for device lithography are also disclosed.

Abstract translation: 用于使自组装嵌段聚合物对准以将其自组装成具有平行于第一轴延伸的不连续第一域的平行排的二维阵列，并且沿着正交的第二轴互相间隔并由连续的第二轴 域。 所述方解石模板具有第一和第二基本上平行的侧壁，所述第一和第二基本平行的侧壁平行于并限定第一轴线并且限定第一轴线并且沿着第二轴线相互间隔延伸，以提供隔室，以将自组装嵌段共聚物的至少一排不连续的第一区域保持在基板上 在侧壁之间并平行于侧壁，并通过连续的第二结构域与之隔开。 隔室具有图案外延成核特征，布置成将隔离物内的特定位置处的不连续的第一结构域中的至少一个定位。 还公开了用于形成图案石墨模板的方法及其用于器件光刻的方法。

公开(公告)号：US09229324B2

公开(公告)日：2016-01-05

申请号：US14385047

申请日：2013-03-06

Applicant: ASML Netherlands B.V.

Inventor： Harmeet Singh ,  Vadim Yevgenyevich Banine ,  Jozef Maria Finders ,  Sander Frederik Wuister ,  Roelof Koole ,  Emiel Peeters

IPC: G03F7/16 ,  G03F7/038 ,  G03F7/00 ,  G03F7/20 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/30 ,  G03F7/40 ,  H01L21/027

CPC classification number: G03F7/162 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/038 ,  G03F7/165 ,  G03F7/2022 ,  G03F7/2024 ,  G03F7/30 ,  G03F7/40 ,  H01L21/027

Abstract: A method is disclosed to form a patterned template on a substrate, to direct orientation of a self-assemblable block copolymer. The method involves providing a resist layer of a positive tone resist on the substrate and overexposing the resist with actinic (e.g. UV) radiation by photolithography to expose a continuous region of the resist layer with a sub-resolution unexposed resist portion at the interface between the resist and the substrate. The resist portion remaining at the interface, after removal of the exposed region, provides a basis for a chemical epitaxy template. The method may allow for simple, direct photolithography to form a patterned chemical epitaxy template and optionally include an accurately co-aligned graphoepitaxy feature and/or a substrate alignment feature.

Abstract translation: 公开了一种在基底上形成图案化模板以引导自组装嵌段共聚物取向的方法。 该方法包括在衬底上提供正色调抗蚀剂的抗蚀剂层，并通过光刻法用光化（例如UV）辐射过度曝光抗蚀剂，以在抗蚀剂层的连接区域之间的界面处暴露抗蚀剂层的亚分辨率未曝光抗蚀剂部分 抗蚀剂和基材。 在除去暴露区域之后残留在界面处的抗蚀剂部分为化学外延模板提供了基础。 该方法可以允许简单的直接光刻以形成图案化的化学外延模板，并且可选地包括精确地共同对准的图案电子特征和/或衬底对准特征。

公开(公告)号：US20150136324A1

公开(公告)日：2015-05-21

申请号：US14605637

申请日：2015-01-26

Applicant: ASML NETHERLANDS B.V.

Inventor： Sander Frederik WUISTER ,  Vadim Yevgenyevich Banine ,  Johan Frederik Dijksman ,  Yvonne Wendela Kruijt-Stegeman ,  Jeroen Herman Lammers ,  Roelof Koole

IPC: B29C43/34 ,  B29C43/02 ,  B29C43/58

CPC classification number: B29C43/34 ,  B29C43/021 ,  B29C43/58 ,  B29C2043/025 ,  B29K2101/12 ,  B44C1/20 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002

Abstract: In an embodiment, there is provided an imprint lithography method that includes providing a first amount of imprintable medium on a first area of a substrate, the first amount of imprintable medium, when fixed, having a first etch rate; and providing a second amount of imprintable medium on a second, different area of the substrate, the second amount of imprintable medium, when fixed, having a second, different etch rate.

Abstract translation: 在一个实施例中，提供了压印光刻方法，其包括在衬底的第一区域上提供第一量的可压印介质，当固定时，第一量的可压印介质具有第一蚀刻速率; 以及在所述基板的第二不同区域上提供第二量的可压印介质，所述第二量的可压印介质在固定时具有第二不同的蚀刻速率。

公开(公告)号：US20150034594A1

公开(公告)日：2015-02-05

申请号：US14385047

申请日：2013-03-06

Applicant: ASML NETHERLANDS B.V.

Inventor： Harmeet Singh ,  Vadim Yevgenyevich Banine ,  Jozef Maria Finders ,  Sander Frederik Wuister ,  Roelof Koole ,  Emiel Peeters

IPC: G03F7/16 ,  G03F7/20 ,  G03F7/40 ,  G03F7/30

CPC classification number: G03F7/162 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/038 ,  G03F7/165 ,  G03F7/2022 ,  G03F7/2024 ,  G03F7/30 ,  G03F7/40 ,  H01L21/027

Abstract: A method is disclosed to form a patterned template on a substrate, to direct orientation of a self-assemblable block copolymer. The method involves providing a resist layer of a positive tone resist on the substrate and overexposing the resist with actinic (e.g. UV) radiation by photolithography to expose a continuous region of the resist layer with a sub-resolution unexposed resist portion at the interface between the resist and the substrate. The resist portion remaining at the interface, after removal of the exposed region, provides a basis for a chemical epitaxy template. The method may allow for simple, direct photolithography to form a patterned chemical epitaxy template and optionally include an accurately co-aligned graphoepitaxy feature and/or a substrate alignment feature.

Abstract translation: 公开了一种在基底上形成图案化模板以引导自组装嵌段共聚物的取向的方法。 该方法包括在衬底上提供正色调抗蚀剂的抗蚀剂层，并通过光刻法用光化（例如UV）辐射过度曝光抗蚀剂，以在抗蚀剂层的连接区域之间的界面处暴露抗蚀剂层的亚分辨率未曝光抗蚀剂部分 抗蚀剂和基材。 在除去暴露区域之后残留在界面处的抗蚀剂部分为化学外延模板提供了基础。 该方法可以允许简单的直接光刻以形成图案化的化学外延模板，并且可选地包括精确地共同对准的图案电子特征和/或衬底对准特征。

公开(公告)号：US20140346141A1

公开(公告)日：2014-11-27

申请号：US14369958

申请日：2012-12-18

Applicant: ASML Netherlands B.V.

Inventor： Aurelie Marie Andree Brizard ,  Roelof Koole ,  Emiel Peeters

IPC: B05D3/10 ,  B05D1/00 ,  B05D1/28 ,  B05D3/00

CPC classification number: B05D3/107 ,  B05D1/28 ,  B05D1/60 ,  B05D3/007 ,  B82Y40/00 ,  C08L53/00 ,  G03F7/0002

Abstract: A method of forming a self-assembled block polymer layer, oriented to form an ordered array of alternating domains, is disclosed. The method involves providing a layer of the self-assemblable block copolymer on the substrate and depositing a first surfactant onto the external surface of the layer prior to inducing self-assembly of the layer to form the ordered array of domains. The first surfactant has a hydrophobic tail and a hydrophilic head group and acts to reduce the interfacial energy at the external surface of the block copolymer layer in order to promote formation of assembly of the block copolymer polymer into an ordered array having the alternating domains.

Abstract translation: 公开了一种形成自组装嵌段聚合物层的方法，其被定向以形成交替畴的有序阵列。 该方法包括在基底上提供一层可自组装的嵌段共聚物，并在引导层的自组装形成畴的有序阵列之前，将第一表面活性剂沉积到该层的外表面上。 第一表面活性剂具有疏水性尾巴和亲水性头基，并且用于降低嵌段共聚物层的外表面处的界面能，以促进嵌段共聚物聚合物组装成具有交替域的有序阵列。

公开(公告)号：US20150050599A1

公开(公告)日：2015-02-19

申请号：US14387186

申请日：2013-03-19

Applicant: ASML Netherlands B.V.

Inventor： Sander Frederik Wuister ,  Vadim Yevgenyevich Banine ,  Jozef Maria Finders ,  Roelof Koole ,  Emiel Peeters ,  Harmeet Singh

IPC: G03F7/26 ,  B05D1/32 ,  B05D3/10 ,  G03F7/20

CPC classification number: G03F7/26 ,  B05D1/32 ,  B05D3/107 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/20 ,  G03F7/2022

Abstract: A method is disclosed to form a patterned epitaxy template, on a substrate, to direct self-assembly of block copolymer for device lithography. A resist layer on a substrate is selectively exposed with actinic (e.g. UV or DUV) radiation by photolithography to provide exposed portions in a regular lattice pattern of touching or overlapping shapes arranged to leave unexposed resist portions between the shapes. Exposed or unexposed resist is removed with remaining resist portions providing the basis for a patterned epitaxy template for the orientation of the self-assemblable block copolymer as a hexagonal or square array. The method allows for simple, direct UV lithography to form patterned epitaxy templates with sub-resolution features.

Abstract translation: 公开了一种在衬底上形成图案化外延模板以引导用于器件光刻的嵌段共聚物的自组装的方法。 基板上的抗蚀剂层通过光刻法选择性地用光化（例如UV或DUV）曝光，以提供布置成在形状之间留下未曝光的抗蚀剂部分的接触或重叠形状的规则格子图案的暴露部分。 用剩余的抗蚀剂部分除去曝光或未曝光的抗蚀剂，为用于可自组装嵌段共聚物取向的图案化外延模板提供六边形或正方形阵列的基础。 该方法允许简单的直接UV光刻形成具有亚分辨率特征的图案化外延模板。

公开(公告)号：US10240250B2

公开(公告)日：2019-03-26

申请号：US14345891

申请日：2012-10-02

Applicant: ASML Netherlands B.V.

Inventor： Thanh Trung Nguyen ,  Jozef Maria Finders ,  Wilhelmus Sebastianus Marcus Maria Ketelaars ,  Sander Frederik Wuister ,  Eddy Cornelis Antonius Van der Heijden ,  Hieronymus Johannus Christiaan Meessen ,  Roelof Koole ,  Emiel Peeters ,  Christianus Martinus Van Heesch ,  Aurelie Marie Andree Brizard ,  Henri Marie Joseph Boots ,  Tamara Druzhinina ,  Jessica Margaretha De Ruiter

IPC: C30B1/12 ,  B81C1/00 ,  G03F7/00 ,  B82Y30/00 ,  H01L21/033

Abstract: A graphoepitaxy template to align a self-assembled block polymer adapted to self-assemble into a 2-D array having parallel rows of discontinuous first domains extending parallel to a first axis, mutually spaced along an orthogonal second axis, and separated by a continuous second domain. The graphoepitaxy template has first and second substantially parallel side walls extending parallel to and defining the first axis and mutually spaced along the second axis to provide a compartment to hold at least one row of discontinuous first domains of the self-assembled block copolymer on the substrate between and parallel to the side walls, and separated therefrom by a continuous second domain. The compartment has a graphoepitaxial nucleation feature arranged to locate at least one of the discontinuous first domains at a specific position within the compartment. Methods for forming the graphoepitaxy template and its use for device lithography are also disclosed.

公开(公告)号：US09513553B2

公开(公告)日：2016-12-06

申请号：US14387186

申请日：2013-03-19

Applicant: ASML Netherlands B.V.

Inventor： Sander Frederik Wuister ,  Vadim Yevgenyevich Banine ,  Jozef Maria Finders ,  Roelof Koole ,  Emiel Peeters ,  Harmeet Singh

IPC: G03F7/20 ,  G03F7/26 ,  G03F7/00 ,  B82Y10/00 ,  B82Y40/00 ,  B05D1/32 ,  B05D3/10

CPC classification number: G03F7/26 ,  B05D1/32 ,  B05D3/107 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/20 ,  G03F7/2022

Abstract: A method is disclosed to form a patterned epitaxy template, on a substrate, to direct self-assembly of block copolymer for device lithography. A resist layer on a substrate is selectively exposed with actinic (e.g. UV or DUV) radiation by photolithography to provide exposed portions in a regular lattice pattern of touching or overlapping shapes arranged to leave unexposed resist portions between the shapes. Exposed or unexposed resist is removed with remaining resist portions providing the basis for a patterned epitaxy template for the orientation of the self-assemblable block copolymer as a hexagonal or square array. The method allows for simple, direct UV lithography to form patterned epitaxy templates with sub-resolution features.

Abstract translation: 公开了一种在衬底上形成图案化外延模板以引导用于器件光刻的嵌段共聚物的自组装的方法。 基板上的抗蚀剂层通过光刻法选择性地用光化（例如UV或DUV）曝光，以提供布置成在形状之间留下未曝光的抗蚀剂部分的接触或重叠形状的规则格子图案的暴露部分。 用剩余的抗蚀剂部分除去曝光或未曝光的抗蚀剂，为用于可自组装嵌段共聚物取向的图案化外延模板提供六边形或正方形阵列的基础。 该方法允许简单的直接UV光刻形成具有亚分辨率特征的图案化外延模板。

公开(公告)号：US09278466B2

公开(公告)日：2016-03-08

申请号：US14605637

申请日：2015-01-26

Applicant: ASML NETHERLANDS B.V.

Inventor： Sander Frederik Wuister ,  Vadim Yevgenyevich Banine ,  Johan Frederik Dijksman ,  Yvonne Wendela Kruijt-Stegeman ,  Jeroen Herman Lammers ,  Roelof Koole

IPC: C03C15/00 ,  B29C43/34 ,  B44C1/20 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/00 ,  B29C43/02 ,  B29C43/58 ,  B29K101/12

CPC classification number: B29C43/34 ,  B29C43/021 ,  B29C43/58 ,  B29C2043/025 ,  B29K2101/12 ,  B44C1/20 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002

Abstract: In an embodiment, there is provided an imprint lithography method that includes providing a first amount of imprintable medium on a first area of a substrate, the first amount of imprintable medium, when fixed, having a first etch rate; and providing a second amount of imprintable medium on a second, different area of the substrate, the second amount of imprintable medium, when fixed, having a second, different etch rate.

公开(公告)号：US09235125B2

公开(公告)日：2016-01-12

申请号：US14380911

申请日：2013-02-06

Applicant: ASML Netherlands B.V.

Inventor： Emiel Peeters ,  Wilhelmus Sebastianus Marcus Maria Ketelaars ,  Sander Frederik Wuister ,  Roelof Koole ,  Christianus Martinus Van Heesch ,  Aurelie Marie Andree Brizard ,  Henri Marie Joseph Boots ,  Thanh Trung Nguyen ,  Oktay Yildirim

IPC: G03F7/20 ,  G03F7/038 ,  G03F7/00 ,  B82Y10/00 ,  B82Y40/00

CPC classification number: G03F7/20 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/038 ,  G03F7/2002

Abstract: A method of forming a patterned chemical epitaxy template, for orientation of a self-assemblable block copolymer including first and second polymer blocks, on a surface of a substrate, the method including applying a primer layer of a primer composition to the surface, the primer composition including a first polymer moiety having a chemical affinity with the first polymer blocks and a second polymer moiety having a chemical affinity with the second polymer blocks, selectively exposing the surface, the primer layer and any overlying layer to actinic radiation to provide exposed and unexposed regions, to render labile the first polymer moiety in the exposed region, and removing the labile first polymer moiety from the exposed region to deplete the primer layer surface in the exposed region of first polymer moiety to form the patterned chemical epitaxy template.

Abstract translation: 一种形成图案化学外延模板的方法，用于在基材表面上包含第一和第二聚合物嵌段的自组装嵌段共聚物的取向，该方法包括将底漆组合物的底漆层施加到表面，引物 组合物，其包含与第一聚合物嵌段具有化学亲合力的第一聚合物部分和与第二聚合物嵌段具有化学亲合力的第二聚合物部分，选择性地将表面，底漆层和任何上覆层暴露于光化辐射以提供暴露和未曝光 使得暴露区域中的第一聚合物部分不稳定，以及从暴露区域除去不稳定的第一聚合物部分，以消除第一聚合物部分的暴露区域中的底漆层表面，以形成图案化的化学外延模板。