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公开(公告)号:US10884339B2
公开(公告)日:2021-01-05
申请号:US16435630
申请日:2019-06-10
Applicant: ASML NETHERLANDS B.V.
Inventor: Wouter Joep Engelen , Otger Jan Luiten , Andrey Alexandrovich Nikipelov , Vadim Yevgenyevich Banine , Pieter Willem Herman De Jager , Erik Roelof Loopstra
IPC: G03B27/42 , H01J31/48 , G03F7/20 , G01J1/04 , G02B1/06 , G02B5/20 , G21K1/10 , G02B26/02 , G01J1/26 , G01J1/42 , H01S3/09 , H05H7/04 , H01S3/00
Abstract: A method of patterning lithographic substrates, the method including using a free electron laser to generate EUV radiation and delivering the EUV radiation to a lithographic apparatus which projects the EUV radiation onto lithographic substrates, wherein the method further includes reducing fluctuations in the power of EUV radiation delivered to the lithographic substrates by using a feedback-based control loop to monitor the free electron laser and adjust operation of the free electron laser accordingly.
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公开(公告)号:US10900829B2
公开(公告)日:2021-01-26
申请号:US16525641
申请日:2019-07-30
Applicant: ASML NETHERLANDS B.V.
Inventor: Vadim Yevgenyevich Banine , Gerrit Jacobus Hendrik Brussaard , Willem Jakobus Cornelis Koppert , Otger Jan Luiten , Han-Kwang Nienhuys , Job Beckers , Ruud Martinus Van Der Horst
Abstract: A radiation sensor apparatus for determining a position and/or power of a radiation beam, the radiation sensor apparatus including a chamber to contain a gas, one or more sensors, and a processor. The chamber has a first opening and a second opening such that a radiation beam can enter the chamber through the first opening, propagate through the chamber generally along an axis, and exit the chamber through the second opening. Each of the one or more sensors is arranged to receive and detect radiation emitted from a region of the chamber around the axis. The processor is operable to use the radiation detected by the one or more sensors to determine a position and/or power of the radiation beam.
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公开(公告)号:US20190353521A1
公开(公告)日:2019-11-21
申请号:US16525641
申请日:2019-07-30
Applicant: ASML NETHERLANDS B.V.
Inventor: Vadim Yevgenyevich Banine , Gerrit Jacobus Hendrik Brussaard , Willem Jakobus Cornelis Koppert , Otger Jan Luiten , Han-Kwang Nienhuys , Job Beckers , Ruud Martinus Van Der Horst
Abstract: A radiation sensor apparatus for determining a position and/or power of a radiation beam, the radiation sensor apparatus including a chamber to contain a gas, one or more sensors, and a processor. The chamber has a first opening and a second opening such that a radiation beam can enter the chamber through the first opening, propagate through the chamber generally along an axis, and exit the chamber through the second opening. Each of the one or more sensors is arranged to receive and detect radiation emitted from a region of the chamber around the axis. The processor is operable to use the radiation detected by the one or more sensors to determine a position and/or power of the radiation beam.
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公开(公告)号:US09823572B2
公开(公告)日:2017-11-21
申请号:US14900110
申请日:2014-06-17
Applicant: ASML Netherlands B.V.
Inventor: Andrey Alexandrovich Nikipelov , Olav Waldemar Vladimir Frijns , Gosse Charles De Vries , Erik Roelof Loopstra , Vadim Yevgenyevich Banine , Pieter Willem Herman De Jager , Rilpho Ludovicus Donker , Han-Kwang Nienhuys , Borgert Kruizinga , Wouter Joep Engelen , Otger Jan Luiten , Johannes Antonius Gerardus Akkermans , Leonardus Adrianus Gerardus Grimminck , Vladimir Litvinenko
IPC: G03B27/42 , G03B27/58 , G03F7/20 , H01S3/09 , G01J1/04 , G02B1/06 , G02B5/20 , G21K1/10 , G02B26/02 , G01J1/26 , G01J1/42 , H05H7/04 , H01S3/00
CPC classification number: G03F7/70033 , G01J1/0407 , G01J1/0418 , G01J1/26 , G01J1/429 , G02B1/06 , G02B5/205 , G02B26/023 , G03F7/70008 , G03F7/7055 , G03F7/70558 , G03F7/7085 , G21K1/10 , H01S3/005 , H01S3/0085 , H01S3/0903 , H05H7/04
Abstract: A method of patterning lithographic substrates that includes using a free electron laser to generate EUV radiation and delivering the EUV radiation to a lithographic apparatus which projects the EUV radiation onto lithographic substrates. The method further includes reducing fluctuations in the power of EUV radiation delivered to the lithographic substrates by using a feedback-based control loop to monitor the free electron laser and adjust operation of the free electron laser accordingly, and applying variable attenuation to EUV radiation that has been output by the free electron laser in order to further control the power of EUV radiation delivered to the lithographic apparatus.
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