公开(公告)号：US09291916B2

公开(公告)日：2016-03-22

申请号：US14613687

申请日：2015-02-04

Applicant: ASML Netherlands B.V.

Inventor： Stefan Cornelis Theodorus Van Der Sanden ,  Richard Johannes Franciscus Van Haren ,  Hubertus Johannes Gertrudus Simons ,  Remi Daniel Marie Edart ,  Xiuhong Wei ,  Irina Lyulina ,  Michael Kubis

IPC: G03F7/20 ,  G03F9/00

CPC classification number: G03F7/70616 ,  G03F7/70141 ,  G03F7/70633 ,  G03F9/7003 ,  G03F9/7088

Abstract: A substrate is loaded onto a substrate support of a lithographic apparatus, after which the apparatus measures locations of substrate alignment marks. These measurements define first correction information allowing the apparatus to apply a pattern at one or more desired locations on the substrate. Additional second correction information is used to enhance accuracy of pattern positioning, in particular to correct higher order distortions of a nominal alignment grid. The second correction information may be based on measurements of locations of alignment marks made when applying a previous pattern to the same substrate. The second correction information may alternatively or in addition be based on measurements made on similar substrates that have been patterned prior to the current substrate.

公开(公告)号：US20150146188A1

公开(公告)日：2015-05-28

申请号：US14403577

申请日：2013-04-23

Applicant: ASML NETHERLANDS B.V.

Inventor： Irina Lyulina ,  Franciscus Godefridus Casper Bijnen ,  Remi Daniel Marie Edart ,  Antoine Gaston Marie Kiers ,  Michael Kubis

IPC: G03F7/20 ,  G01B11/14

CPC classification number: G03F7/70141 ,  G01B11/14 ,  G03F7/70633 ,  G03F9/7046

Abstract: A method to determine the usefulness of an alignment mark of a first pattern in transferring a second pattern to a substrate relative to the first pattern already present on the substrate includes measuring the position of the alignment mark, modeling the position of the alignment mark, determining the model error between measured and modeled position, measuring a corresponding overlay error between first and second pattern and comparing the model error with the overlay error to determine the usefulness of the alignment mark. Subsequently this information can be used when processing next substrates thereby improving the overlay for these substrates. A lithographic apparatus and/or overlay measurement system may be operated in accordance with the method.

Abstract translation: 确定第一图案的对准标记在基板上相对于已经存在于基板上的第一图案的第二图案的有用性的方法包括测量对准标记的位置，对对准标记的位置进行建模，确定 测量和建模位置之间的模型误差，测量第一和第二模式之间的对应覆盖误差，并将模型误差与覆盖误差进行比较，以确定对准标记的有用性。 随后，当处理下一个基板时，可以使用该信息，从而改善这些基板的覆盖层。 可以根据该方法操作光刻设备和/或覆盖测量系统。

公开(公告)号：US09454084B2

公开(公告)日：2016-09-27

申请号：US14403577

申请日：2013-04-23

Applicant: ASML NETHERLANDS B.V.

Inventor： Irina Lyulina ,  Franciscus Godefridus Casper Bijnen ,  Remi Daniel Marie Edart ,  Antoine Gaston Marie Kiers ,  Michael Kubis

IPC: G03B27/42 ,  G03F7/20 ,  G03F9/00 ,  G01B11/14

CPC classification number: G03F7/70141 ,  G01B11/14 ,  G03F7/70633 ,  G03F9/7046

Abstract: A method to determine the usefulness of an alignment mark of a first pattern in transferring a second pattern to a substrate relative to the first pattern already present on the substrate includes measuring the position of the alignment mark, modeling the position of the alignment mark, determining the model error between measured and modeled position, measuring a corresponding overlay error between first and second pattern and comparing the model error with the overlay error to determine the usefulness of the alignment mark. Subsequently this information can be used when processing next substrates thereby improving the overlay for these substrates. A lithographic apparatus and/or overlay measurement system may be operated in accordance with the method.

Abstract translation: 确定第一图案的对准标记在基板上相对于已经存在于基板上的第一图案的第二图案的有用性的方法包括测量对准标记的位置，对对准标记的位置进行建模，确定 测量和建模位置之间的模型误差，测量第一和第二模式之间的对应覆盖误差，并将模型误差与覆盖误差进行比较，以确定对准标记的有用性。 随后，当处理下一个基板时，可以使用该信息，从而改善这些基板的覆盖层。 可以根据该方法操作光刻设备和/或覆盖测量系统。