METHODS AND APPARATUS FOR OBTAINING DIAGNOSTIC INFORMATION RELATING TO AN INDUSTRIAL PROCESS
    2.
    发明申请
    METHODS AND APPARATUS FOR OBTAINING DIAGNOSTIC INFORMATION RELATING TO AN INDUSTRIAL PROCESS 有权
    获取与工业过程相关的诊断信息的方法和装置

    公开(公告)号:US20160246185A1

    公开(公告)日:2016-08-25

    申请号:US15025856

    申请日:2014-09-05

    Abstract: In a lithographic process, product units such as semiconductor wafers are subjected to lithographic patterning operations and chemical and physical processing operations. Alignment data or other measurements are made at stages during the performance of the process to obtain object data representing positional deviation or other parameters measured at points spatially distributed across each unit. This object data is used to obtain diagnostic information by performing a multivariate analysis to decompose a set of vectors representing the units in said multidimensional space into one or more component vectors. Diagnostic information about the industrial process is extracted using the component vectors. The performance of the industrial process for subsequent product units can be controlled based on the extracted diagnostic information.

    Abstract translation: 在光刻工艺中,诸如半导体晶片的产品单元经受光刻图案化操作和化学和物理处理操作。 在执行过程期间分阶段进行对准数据或其他测量,以获得表示在空间上分布在每个单元上的点处测量的位置偏差或其他参数的对象数据。 该对象数据用于通过执行多变量分析来获取诊断信息,以将表示所述多维空间中的单位的向量集合分解为一个或多个分量向量。 使用分量向量提取关于工业过程的诊断信息。 可以基于提取的诊断信息来控制后续产品单元的工业过程的性能。

    METHOD TO DETERMINE THE USEFULNESS OF ALIGNMENT MARKS TO CORRECT OVERLAY, AND A COMBINATION OF A LITHOGRAPHIC APPARATUS AND AN OVERLAY MEASUREMENT SYSTEM
    10.
    发明申请
    METHOD TO DETERMINE THE USEFULNESS OF ALIGNMENT MARKS TO CORRECT OVERLAY, AND A COMBINATION OF A LITHOGRAPHIC APPARATUS AND AN OVERLAY MEASUREMENT SYSTEM 有权
    确定对准标记的有效性以纠正重叠的方法,以及一个平面设备和叠加测量系统的组合

    公开(公告)号:US20150146188A1

    公开(公告)日:2015-05-28

    申请号:US14403577

    申请日:2013-04-23

    CPC classification number: G03F7/70141 G01B11/14 G03F7/70633 G03F9/7046

    Abstract: A method to determine the usefulness of an alignment mark of a first pattern in transferring a second pattern to a substrate relative to the first pattern already present on the substrate includes measuring the position of the alignment mark, modeling the position of the alignment mark, determining the model error between measured and modeled position, measuring a corresponding overlay error between first and second pattern and comparing the model error with the overlay error to determine the usefulness of the alignment mark. Subsequently this information can be used when processing next substrates thereby improving the overlay for these substrates. A lithographic apparatus and/or overlay measurement system may be operated in accordance with the method.

    Abstract translation: 确定第一图案的对准标记在基板上相对于已经存在于基板上的第一图案的第二图案的有用性的方法包括测量对准标记的位置,对对准标记的位置进行建模,确定 测量和建模位置之间的模型误差,测量第一和第二模式之间的对应覆盖误差,并将模型误差与覆盖误差进行比较,以确定对准标记的有用性。 随后,当处理下一个基板时,可以使用该信息,从而改善这些基板的覆盖层。 可以根据该方法操作光刻设备和/或覆盖测量系统。

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