公开(公告)号：US11448973B2

公开(公告)日：2022-09-20

申请号：US16954384

申请日：2018-11-20

申请人： ASML NETHERLANDS B.V.

发明人： Manouk Rijpstra ,  Cornelis Johannes Henricus Lambregts ,  Wim Tjibbo Tel ,  Sarathi Roy ,  Cédric Désiré Grouwstra ,  Chi-Fei Nien ,  Weitian Kou ,  Chang-Wei Chen ,  Pieter Gerardus Jacobus Smorenberg

IPC分类号： G03F7/20

摘要： A method for determining a correction to a patterning process. The method includes obtaining a plurality of qualities of the patterning process (e.g., a plurality of parameter maps, or one or more corrections) derived from metrology data and data of an apparatus used in the patterning process, selecting, by a hardware computer system, a representative quality from the plurality of qualities, and determining, by the hardware computer system, a correction to the patterning process based on the representative quality.

公开(公告)号：US11709434B2

公开(公告)日：2023-07-25

申请号：US17633781

申请日：2020-07-14

申请人： ASML NETHERLANDS B.V.

发明人： Rizvi Rahman ,  Cornelis Johannes Henricus Lambregts ,  Wolfgang Helmut Henke

IPC分类号： G03F7/20 ,  G03F7/00

CPC分类号： G03F7/70633 ,  G03F7/70641

摘要： A device manufacturing method including: performing a first exposure on a substrate using a first lithographic apparatus to form a first patterned layer including first features; processing the substrate to transfer the first features into the substrate; and performing a second exposure on the substrate using a second lithographic apparatus to form a second patterned layer including second features, wherein: the first lithographic apparatus has first and second control inputs effective to control first and second parameters of the first features at least partly independently; the second lithographic apparatus has a third control input effective to control the first and second parameters of the second features together; and the first exposure is performed with the first and/or second control input set to pre-bias the first and/or second parameter.

公开(公告)号：US11372338B2

公开(公告)日：2022-06-28

申请号：US16979056

申请日：2019-02-13

申请人： ASML NETHERLANDS B.V.

发明人： Ivo Matteo Leonardus Weijden ,  Jeroen Van Dongen ,  Cornelis Johannes Henricus Lambregts ,  Theo Wilhelmus Maria Thijssen ,  Ruud Rudolphus Johannes Catharinus De Wit ,  Hans Marinus Struijs ,  Erik Mathijs Maria Crombag ,  Roy Werkman ,  Maria Helena Schut ,  Erwin Riemens ,  Menno Meeldijk

IPC分类号： G03F7/20 ,  G01N21/95 ,  G03F9/00 ,  H01L21/66

摘要： A method for determining a preferred control strategy relating to control of a manufacturing process for manufacturing an integrated circuit. The method includes: obtaining process data associated with a design of said integrated circuit; and obtaining a plurality of candidate control strategies configured to control the manufacturing process based on the process data, each candidate control strategy including an associated cost metric based on an associated requirement to implement the candidate control strategy. A quality metric related to an expected performance of the manufacturing process is determined for each candidate control strategies, and a preferred control strategy is selected based on the determined quality metrics and associated cost metrics for each candidate control strategy.