Abstract:
A system for an extreme ultraviolet (EUV) light source includes an optical amplifier including a gain medium positioned on a beam path, the optical amplifier configured to receive a light beam at an input and to emit an output light beam for an EUV light source at an output; a feedback system that measures a property of the output light beam and produces a feedback signal based on the measured property; and an adaptive optic positioned in the beam path and configured to receive the feedback signal and to adjust a property of the output light beam in response to the feedback signal.
Abstract:
A target material is provided at a target location, the target material including a material that emits extreme ultraviolet light when converted to plasma, and the target material extending in a first extent along a first direction and in a second extent along a second direction; an amplified light beam is directed along a direction of propagation toward the target location; and the amplified light beam is focused in a focal plane, where the target location is outside of the focal plane and an interaction between the amplified light beam and the target material converts at least part of the target material to plasma that emits EUV light.
Abstract:
A system for an extreme ultraviolet (EUV) light source includes an optical amplifier including a gain medium positioned on a beam path, the optical amplifier configured to receive a light beam at an input and to emit an output light beam for an EUV light source at an output; a feedback system that measures a property of the output light beam and produces a feedback signal based on the measured property; and an adaptive optic positioned in the beam path and configured to receive the feedback signal and to adjust a property of the output light beam in response to the feedback signal.
Abstract:
A target material is provided at a target location, the target material including a material that emits extreme ultraviolet light when converted to plasma, and the target material extending in a first extent along a first direction and in a second extent along a second direction; an amplified light beam is directed along a direction of propagation toward the target location; and the amplified light beam is focused in a focal plane, where the target location is outside of the focal plane and an interaction between the amplified light beam and the target material converts at least part of the target material to plasma that emits EUV light.
Abstract:
A device is disclosed herein which may comprise a droplet generator producing droplets of target material; a sensor providing an intercept time signal when a droplet reaches a preselected location; a delay circuit coupled with said sensor, the delay circuit generating a trigger signal delayed from the intercept time signal; a laser source responsive to a trigger signal to produce a laser pulse; and a system controlling said delay circuit to provide a trigger signal delayed from the intercept time by a first delay time to generate a light pulse that is focused on a droplet and a trigger signal delayed from the intercept time by a second delay time to generate a light pulse which is not focused on a droplet.
Abstract:
A target material is provided at a target location, the target material including a material that emits extreme ultraviolet light when converted to plasma, and the target material extending in a first extent along a first direction and in a second extent along a second direction; an amplified light beam is directed along a direction of propagation toward the target location; and the amplified light beam is focused in a focal plane, where the target location is outside of the focal plane and an interaction between the amplified light beam and the target material converts at least part of the target material to plasma that emits EUV light.
Abstract:
A target material is provided at a target location, the target material including a material that emits extreme ultraviolet light when converted to plasma, and the target material extending in a first extent along a first direction and in a second extent along a second direction; an amplified light beam is directed along a direction of propagation toward the target location; and the amplified light beam is focused in a focal plane, where the target location is outside of the focal plane and an interaction between the amplified light beam and the target material converts at least part of the target material to plasma that emits EUV light.