Abstract:
A system for an extreme ultraviolet (EUV) light source includes an optical amplifier including a gain medium positioned on a beam path, the optical amplifier configured to receive a light beam at an input and to emit an output light beam for an EUV light source at an output; a feedback system that measures a property of the output light beam and produces a feedback signal based on the measured property; and an adaptive optic positioned in the beam path and configured to receive the feedback signal and to adjust a property of the output light beam in response to the feedback signal.
Abstract:
Techniques for forming a target and for producing extreme ultraviolet light include releasing an initial target material toward a target location, the target material including a material that emits extreme ultraviolet (EUV) light when converted to plasma; directing a first amplified light beam toward the initial target material, the first amplified light beam having an energy sufficient to form a collection of pieces of target material from the initial target material, each of the pieces being smaller than the initial target material and being spatially distributed throughout a hemisphere shaped volume; and directing a second amplified light beam toward the collection of pieces to convert the pieces of target material to plasma that emits EUV light.
Abstract:
A method and apparatus for protecting the seed laser a laser produced plasma (LPP) extreme ultraviolet (EUV) light system are disclosed. An isolation stage positioned on an optical path diverts light reflected from further components in the LPP EUV light system from reaching the seed laser. The isolation stage comprises two AOMs that are separated by a delay line. The AOMs, when open, direct light onto the optical path and, when closed, direct light away from the optical path. The delay introduced by the delay line is determined so that the opening and the closing of the AOMs can be timed to direct a forward-moving pulse onto the optical path and to divert reflected light at other times. The isolation stage can be positioned between gain elements to prevent amplified reflected light from reaching the seed laser and other potentially harmful effects.
Abstract:
A system for an extreme ultraviolet (EUV) light source includes an optical amplifier including a gain medium positioned on a beam path, the optical amplifier configured to receive a light beam at an input and to emit an output light beam for an EUV light source at an output; a feedback system that measures a property of the output light beam and produces a feedback signal based on the measured property; and an adaptive optic positioned in the beam path and configured to receive the feedback signal and to adjust a property of the output light beam in response to the feedback signal.
Abstract:
Techniques for forming a target and for producing extreme ultraviolet light include releasing an initial target material toward a target location, the target material including a material that emits extreme ultraviolet (EUV) light when converted to plasma; directing a first amplified light beam toward the initial target material, the first amplified light beam having an energy sufficient to form a collection of pieces of target material from the initial target material, each of the pieces being smaller than the initial target material and being spatially distributed throughout a hemisphere shaped volume; and directing a second amplified light beam toward the collection of pieces to convert the pieces of target material to plasma that emits EUV light.
Abstract:
Techniques for forming a target and for producing extreme ultraviolet light include releasing an initial target material toward a target location, the target material including a material that emits extreme ultraviolet (EUV) light when converted to plasma; directing a first amplified light beam toward the initial target material, the first amplified light beam having an energy sufficient to form a collection of pieces of target material from the initial target material, each of the pieces being smaller than the initial target material and being spatially distributed throughout a hemisphere shaped volume; and directing a second amplified light beam toward the collection of pieces to convert the pieces of target material to plasma that emits EUV light.
Abstract:
Techniques for forming a target and for producing extreme ultraviolet light include releasing an initial target material toward a target location, the target material including a material that emits extreme ultraviolet (EUV) light when converted to plasma; directing a first amplified light beam toward the initial target material, the first amplified light beam having an energy sufficient to form a collection of pieces of target material from the initial target material, each of the pieces being smaller than the initial target material and being spatially distributed throughout a hemisphere shaped volume; and directing a second amplified light beam toward the collection of pieces to convert the pieces of target material to plasma that emits EUV light.