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公开(公告)号：US09798225B2
公开(公告)日：2017-10-24
申请号：US15034105
申请日：2014-10-14
Applicant: ASML Netherlands B.V.
CPC classification number: G03F1/24 , G03F1/22 , G03F1/38 , G03F1/44 , G03F1/68 , G03F1/70 , G03F7/2004 , G03F7/70433 , G03F7/70616 , G03F7/70625 , G03F7/70683
Abstract: A method of characterizing a lithographic mask type uses a mask having thereon test pattern units of linear features at different orientations. The mask is exposed, rotated by angle, exposed again, rotated by a further angle, exposed, etc. The printed features are measured to determine one or more characteristics of the mask. The method can be used to model shadowing effects of a EUV mask with a thick absorber illuminated at an angle.
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公开(公告)号：US11287748B2
公开(公告)日：2022-03-29
申请号：US16965130
申请日：2019-02-19
Applicant: ASML NETHERLANDS B.V.
Abstract: A method for inspection of a patterning device. The method includes obtaining (i) patterning device apparatus data of a patterning device making process, (ii) a patterning device substrate map based on the patterning device apparatus data, and (iii) predicted process window limiting pattern locations corresponding to the patterning device based on the patterning device substrate map, and based on the process window limiting pattern locations, guiding a patterning device inspection apparatus to the process window limiting pattern locations for defect inspection.
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公开(公告)号：US20190171109A1
公开(公告)日：2019-06-06
申请号：US16257955
申请日：2019-01-25
Applicant: ASML Netherlands B.V.
Inventor： Marcus Adrianus VAN DE KERKHOF , Anton Bernhard Van Oosten , Hans Butler , Erik Roelof Loopstra , Marc Wilhelmus Maria Van Der Wijst , Koen Jacobus Johannes Maria Zaal
Abstract: Disclosed is a system configured to project a beam of radiation onto a target portion of a substrate within a lithographic apparatus. The system comprises a mirror having an actuator for positioning the mirror and/or configuring the shape of the mirror, the actuator also providing active damping to the mirror, and a controller for generating actuator control signals for control of said actuator(s). A first coordinate system is used for control of said actuator(s) when positioning said mirror and/or configuring the shape of said mirror and a second coordinate system is used for control of said actuator(s) when providing active damping to said mirror.
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公开(公告)号：US11460782B2
公开(公告)日：2022-10-04
申请号：US17265632
申请日：2019-08-12
Applicant: ASML NETHERLANDS B.V.
Inventor： Anton Bernhard Van Oosten
Abstract: A method for reducing apparatus performance variation. The method includes obtaining (i) a reference performance (e.g., CD) of a reference apparatus (e.g., a reference scanner), (ii) a set of initial leading degrees of freedom selected from a plurality of degrees of freedom of a plurality of pupil facet mirrors of an apparatus (e.g., to be matched scanner) that is selected to reproduce the reference performance, and (iii) exposure data related to one or more parameters (e.g., CD, overlay, focus, etc.) of the patterning process indicating a performance of the apparatus based on the set of initial leading degrees of freedom; and determining a matching pupil of the apparatus based on the set of initial leading degrees of freedom and the exposure data such that the matching pupil reduces a difference between the performance of the apparatus and the reference performance.
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公开(公告)号：US11054754B2
公开(公告)日：2021-07-06
申请号：US16626690
申请日：2018-05-28
Applicant: ASML Netherlands B.V.
Inventor： Frank Staals , Anton Bernhard Van Oosten , Yasri Yudhistira , Carlo Cornelis Maria Luijten , Bert Verstraeten , Jan-Willem Gemmink
IPC: G03F7/20
Abstract: Focus metrology patterns and methods are disclosed which do not rely on sub-resolution features. Focus can be measured by measuring asymmetry of the printed pattern (T), or complementary pairs of printed patterns (TN/TM). Asymmetry can be measured by scatterometry. Patterns may be printed using EUV radiation or DUV radiation. A first type of focus metrology pattern comprises first features (422) interleaved with second features (424) A minimum dimension (w1) of each first feature is close to a printing resolution. A maximum dimension (w2) of each second feature in the direction of periodicity is at least twice the minimum dimension of the first features. Each first feature is positioned between two adjacent second features such that a spacing (w1′) and its nearest second feature is between one half and twice the minimum dimension of the first features. A second type of focus metrology pattern comprises features (1122, 1124) arranged in pairs.
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Patent Agency Ranking
公开(公告)号：US12112260B2
公开(公告)日：2024-10-08
申请号：US16424811
申请日：2019-05-29
Applicant: ASML Netherlands B.V.
Inventor： Lorenzo Tripodi , Patrick Warnaar , Grzegorz Grzela , Mohammadreza Hajiahmadi , Farzad Farhadzadeh , Patricius Aloysius Jacobus Tinnemans , Scott Anderson Middlebrooks , Adrianus Cornelis Matheus Koopman , Frank Staals , Brennan Peterson , Anton Bernhard Van Oosten
CPC classification number: G06N3/08 , G01B11/02 , G01N21/55 , G06T7/0006 , G06T7/001 , G01B2210/56 , G06T2207/20081 , G06T2207/20084 , G06T2207/30148
Abstract: Disclosed is a method of determining a characteristic of interest relating to a structure on a substrate formed by a lithographic process, the method comprising: obtaining an input image of the structure; and using a trained neural network to determine the characteristic of interest from said input image. Also disclosed is a reticle comprising a target forming feature comprising more than two sub-features each having different sensitivities to a characteristic of interest when imaged onto a substrate to form a corresponding target structure on said substrate. Related methods and apparatuses are also described.
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公开(公告)号：US11314174B2
公开(公告)日：2022-04-26
申请号：US16645672
申请日：2018-08-03
Applicant: ASML Netherlands B.V.
Inventor： Laurentius Cornelius De Winter , Roland Pieter Stolk , Frank Staals , Anton Bernhard Van Oosten , Paul Christiaan Hinnen , Marinus Jochemsen , Thomas Theeuwes , Eelco Van Setten
Abstract: Disclosed is a method of measuring focus performance of a lithographic apparatus, and corresponding patterning device and lithographic apparatus. The method comprises using the lithographic apparatus to print one or more first printed structures and second printed structures. The first printed structures are printed by illumination having a first non-telecentricity and the second printed structures being printed by illumination having a second non-telecentricity, different to said first non-telecentricity. A focus dependent parameter related to a focus-dependent positional shift between the first printed structures and the second printed structures on said substrate is measured and a measurement of focus performance based at least in part on the focus dependent parameter is derived therefrom.
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公开(公告)号：US11150560B2
公开(公告)日：2021-10-19
申请号：US16881109
申请日：2020-05-22
Applicant: ASML Netherlands B.V.
Inventor： Marcus Adrianus Van De Kerkhof , Anton Bernhard Van Oosten , Hans Butler , Erik Roelof Loopstra , Marc Wilhelmus Maria Van Der Wijst , Koen Jacobus Johannes Maria Zaal
Abstract: Disclosed is a system configured to project a beam of radiation onto a target portion of a substrate within a lithographic apparatus. The system includes a radiation source. The radiation source includes a grating structure operable to suppress the zeroth order of reflected radiation for at least a first component wavelength. The grating structure has a periodic profile including regularly spaced structures providing three surface levels, such that radiation diffracted by the grating structure includes radiation of three phases which destructively interfere for at least the zeroth order of the reflected radiation for the first component wavelength. The grating structure is on a radiation collector within the source.
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公开(公告)号：US11079687B2
公开(公告)日：2021-08-03
申请号：US16955483
申请日：2018-12-17
Applicant: ASML NETHERLANDS B.V.
Inventor： Abraham Slachter , Stefan Hunsche , Wim Tjibbo Tel , Anton Bernhard Van Oosten , Koenraad Van Ingen Schenau , Gijsbert Rispens , Brennan Peterson
IPC: G03F7/20
Abstract: A method including obtaining (i) measurements of a parameter of the feature, (ii) data related to a process variable of a patterning process, (iii) a functional behavior of the parameter defined as a function of the process variable based on the measurements of the parameter and the data related to the process variable, (iv) measurements of a failure rate of the feature, and (v) a probability density function of the process variable for a setting of the process variable, converting the probability density function of the process variable to a probability density function of the parameter based on a conversion function, where the conversion function is determined based on the function of the process variable, and determining a parameter limit of the parameter based on the probability density function of the parameter and the measurements of the failure rate.
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10.发明授权公开(公告)号：US10054862B2
公开(公告)日：2018-08-21
申请号：US15179509
申请日：2016-06-10
Applicant: ASML Netherlands B.V.
Inventor： Anton Bernhard Van Oosten , Paul Christiaan Hinnen , Robertus Cornelis Martinus De Kruif , Robert John Socha
CPC classification number: G03F7/70558 , G03F1/44 , G03F7/70516 , G03F7/70525 , G03F7/70625 , G03F7/70641
Abstract: Disclosed is a method of monitoring a focus parameter during a lithographic process. The method comprises acquiring first and second measurements of, respectively first and second targets, wherein the first and second targets have been exposed with a relative best focus offset. The method then comprises determining the focus parameter from first and second measurements. Also disclosed are corresponding measurement and lithographic apparatuses, a computer program and a method of manufacturing devices.
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