CMUTs with a high-k dielectric
    1.
    发明授权
    CMUTs with a high-k dielectric 有权
    具有高k电介质的CMUT

    公开(公告)号:US08203912B2

    公开(公告)日:2012-06-19

    申请号:US12671108

    申请日:2008-07-31

    IPC分类号: H04R19/00 H04R17/00

    CPC分类号: B06B1/0292

    摘要: A capacitive ultrasound transducer includes a first electrode, a second electrode, and a third electrode, the third electrode including a central region disposed in collapsibly spaced relation with the first electrode, and a peripheral region disposed outward of the central region and disposed in collapsibly spaced relation with the second electrode. The transducer further includes a layer of a high dielectric constant material disposed between the third electrode and the first electrode, and between the third electrode and the second electrode. The transducer may be operable in a collapsed mode wherein the peripheral region of the third electrode oscillates relative to the second electrode, and the central region of the third electrode is fully collapsed with respect to the first electrode such that the dielectric layer is sandwiched therebetween. Piezoelectric actuation, such as d31 and d33 mode piezoelectric actuation, may further be included. A medical imaging system includes an array of such capacitive ultrasound transducers disposed on a common substrate.

    摘要翻译: 电容式超声波换能器包括第一电极,第二电极和第三电极,所述第三电极包括与所述第一电极以可折叠间隔开的关系设置的中心区域,以及设置在所述中心区域外侧的周边区域, 与第二电极的关系。 换能器还包括设置在第三电极和第一电极之间以及第三电极和第二电极之间的高介电常数材料层。 换能器可以以折叠模式操作,其中第三电极的周边区域相对于第二电极振荡,并且第三电极的中心区域相对于第一电极完全折叠,使得介电层夹在其间。 可以进一步包括诸如d31和d33模式压电致动的压电致动。 医疗成像系统包括设置在公共基底上的这种电容式超声换能器阵列。

    CMUTS WITH A HIGH-K DIELECTRIC
    2.
    发明申请
    CMUTS WITH A HIGH-K DIELECTRIC 有权
    具有高K电介质的CMUTS

    公开(公告)号:US20100202254A1

    公开(公告)日:2010-08-12

    申请号:US12671108

    申请日:2008-07-31

    IPC分类号: B06B1/06

    CPC分类号: B06B1/0292

    摘要: A capacitive ultrasound transducer includes a first electrode, a second electrode, and a third electrode, the third electrode including a central region disposed in collapsibly spaced relation with the first electrode, and a peripheral region disposed outward of the central region and disposed in collapsibly spaced relation with the second electrode. The transducer further includes a layer of a high dielectric constant material disposed between the third electrode and the first electrode, and between the third electrode and the second electrode. The transducer may be operable in a collapsed mode wherein the peripheral region of the third electrode oscillates relative to the second electrode, and the central region of the third electrode is fully collapsed with respect to the first electrode such that the dielectric layer is sandwiched therebetween. Piezoelectric actuation, such as d31 and d33 mode piezoelectric actuation, may further be included. A medical imaging system includes an array of such capacitive ultrasound transducers disposed on a common substrate.

    摘要翻译: 电容式超声波换能器包括第一电极,第二电极和第三电极,所述第三电极包括与所述第一电极以可折叠间隔开的关系设置的中心区域,以及设置在所述中心区域外侧的周边区域, 与第二电极的关系。 换能器还包括设置在第三电极和第一电极之间以及第三电极和第二电极之间的高介电常数材料层。 换能器可以以折叠模式操作,其中第三电极的周边区域相对于第二电极振荡,并且第三电极的中心区域相对于第一电极完全折叠,使得介电层夹在其间。 可以进一步包括诸如d31和d33模式压电致动的压电致动。 医疗成像系统包括设置在公共基底上的这种电容式超声换能器阵列。

    GENERATING AND EXPLOITING AN ASYMMETRIC CAPACITANCE HYSTERESIS OF FERROELECTRIC MIM CAPACITORS
    3.
    发明申请
    GENERATING AND EXPLOITING AN ASYMMETRIC CAPACITANCE HYSTERESIS OF FERROELECTRIC MIM CAPACITORS 有权
    生成和开发电磁MIM电容器的不对称电容滞后

    公开(公告)号:US20110198725A1

    公开(公告)日:2011-08-18

    申请号:US13125822

    申请日:2009-10-24

    IPC分类号: H01L27/06 G01R31/12 G11C11/22

    摘要: The present invention relates to an electric component comprising at least one first MIM capacitor having a ferroelectric insulator with a dielectric constant of at least 100 between a first capacitor electrode of a first electrode material and a second capacitor electrode of a second electrode material. The first and second electrode materials are selected such that the first MIM capacitor exhibits, as a function of a DC voltage applicable between the first and second electrodes, an asymmetric capacity hysteresis that lets the first MIM capacitor, in absence of the DC voltage, assume one of at least two possible distinct capacitance values, in dependence on a polarity of a switching voltage last applied to the capacitor, the switching voltage having an amount larger than a threshold-voltage amount. The invention is applicable for ESD sensors, memories and high-frequency devices.

    摘要翻译: 本发明涉及一种电气部件,包括至少一个第一MIM电容器,其具有在第一电极材料的第一电容器电极和第二电极材料的第二电容器电极之间具有至少100的介电常数的铁电绝缘体。 选择第一和第二电极材料,使得第一MIM电容器作为可应用于第一和第二电极之间的DC电压的函数表现出不对称的电容滞后,使第一MIM电容器在没有直流电压的情况下呈现 根据最后施加到电容器的开关电压的极性,开关电压具有大于阈值电压量的量的至少两个可能的不同电容值中的一个。 本发明适用于ESD传感器,存储器和高频器件。

    Generating and exploiting an asymmetric capacitance hysteresis of ferroelectric MIM capacitors
    4.
    发明授权
    Generating and exploiting an asymmetric capacitance hysteresis of ferroelectric MIM capacitors 有权
    产生和利用铁电MIM电容器的非对称电容滞后

    公开(公告)号:US08531862B2

    公开(公告)日:2013-09-10

    申请号:US13125822

    申请日:2009-10-24

    IPC分类号: G11C11/22 H02H3/22 H03B5/20

    摘要: The present invention relates to an electric component comprising at least one first MIM capacitor having a ferroelectric insulator with a dielectric constant of at least 100 between a first capacitor electrode of a first electrode material and a second capacitor electrode of a second electrode material. The first and second electrode materials are selected such that the first MIM capacitor exhibits, as a function of a DC voltage applicable between the first and second electrodes, an asymmetric capacitance hysteresis that lets the first MIM capacitor, in absence of the DC voltage, assume one of at least two possible distinct capacitance values, in dependence on a polarity of a switching voltage last applied to the capacitor, the switching voltage having an amount larger than a threshold-voltage amount. The invention is applicable for ESD sensors, memories and high-frequency devices.

    摘要翻译: 本发明涉及一种电气部件,包括至少一个第一MIM电容器,其具有在第一电极材料的第一电容器电极和第二电极材料的第二电容器电极之间具有至少100的介电常数的铁电绝缘体。 选择第一和第二电极材料,使得第一MIM电容器作为可应用于第一和第二电极之间的DC电压的函数表现出不对称电容滞后,其使第一MIM电容器在没有DC电压的情况下呈现 根据最后施加到电容器的开关电压的极性,开关电压具有大于阈值电压量的量的至少两个可能的不同电容值中的一个。 本发明适用于ESD传感器,存储器和高频器件。

    3D integration of a MIM capacitor and a resistor
    5.
    发明授权
    3D integration of a MIM capacitor and a resistor 有权
    MIM电容和电阻的3D集成

    公开(公告)号:US08901705B2

    公开(公告)日:2014-12-02

    申请号:US13126233

    申请日:2009-10-22

    摘要: The present invention relates to an electronic component, that comprises, on a substrate, at least one integrated MIM capacitor, (114) an electrically insulating first cover layer (120) which partly or fully covers the top capacitor electrode (118) and is made of a lead-containing dielectric material, and a top barrier layer (122) on the first cover layer. The top barrier layer serves for avoiding a reduction of lead atoms comprised by the first cover layer under exposure of the first cover layer to a reducing substance. An electrically insulating second cover layer (124) on the top barrier layer has a dielectric permittivity smaller than that of the first cover layer establishes a low parasitic capacitance of the cover-layer structure. The described cover-layer structure with the intermediate top barrier layer allows to fabricate a high-accuracy resistor layer (126.1) on top.

    摘要翻译: 电子部件技术领域本发明涉及一种电子部件,其在基板上包括至少一个集成MIM电容器,(114)部分地或完全覆盖顶部电容器电极(118)并被制成的电绝缘的第一覆盖层(120) 的含铅介电材料,以及在第一覆盖层上的顶部阻挡层(122)。 顶部阻挡层用于避免在第一覆盖层暴露于还原物质时第一覆盖层所包含的引线原子的还原。 在顶部阻挡层上的电绝缘的第二覆盖层(124)的介电常数比第一覆盖层的介电常数小,从而形成覆盖层结构的低寄生电容。 所描述的具有中间顶部阻挡层的覆盖层结构允许在顶部制造高精度电阻层(126.1)。

    3D INTEGRATION OF A MIM CAPACITOR AND A RESISTOR
    6.
    发明申请
    3D INTEGRATION OF A MIM CAPACITOR AND A RESISTOR 有权
    MIM电容器和电阻器的3D集成

    公开(公告)号:US20110204480A1

    公开(公告)日:2011-08-25

    申请号:US13126233

    申请日:2009-10-22

    IPC分类号: H01L29/92 H01L21/02

    摘要: The present invention relates to an electronic component, that comprises, on a substrate, at least one integrated MIM capacitor, (114) an electrically insulating first cover layer (120) which partly or fully covers the top capacitor electrode (118) and is made of a lead-containing dielectric material, and a top barrier layer (122) on the first cover layer. The top barrier layer serves for avoiding a reduction of lead atoms comprised by the first cover layer under exposure of the first cover layer to a reducing substance. An electrically insulating second cover layer (124) on the top barrier layer has a dielectric permittivity smaller than that of the first cover layer establishes a low parasitic capacitance of the cover-layer structure. The described cover-layer structure with the intermediate top barrier layer allows to fabricate a high-accuracy resistor layer (126.1) on top.

    摘要翻译: 电子部件技术领域本发明涉及一种电子部件,其在基板上包括至少一个集成MIM电容器,(114)部分地或完全覆盖顶部电容器电极(118)并被制成的电绝缘的第一覆盖层(120) 的含铅介电材料,以及在第一覆盖层上的顶部阻挡层(122)。 顶部阻挡层用于避免在第一覆盖层暴露于还原物质时第一覆盖层所包含的引线原子的还原。 在顶部阻挡层上的电绝缘的第二覆盖层(124)的介电常数比第一覆盖层的介电常数小,从而形成覆盖层结构的低寄生电容。 所描述的具有中间顶部阻挡层的覆盖层结构允许在顶部制造高精度电阻层(126.1)。

    Tunable capacitor
    7.
    发明授权
    Tunable capacitor 有权
    可调谐电容

    公开(公告)号:US08767373B2

    公开(公告)日:2014-07-01

    申请号:US12990044

    申请日:2009-04-29

    IPC分类号: H01G5/00

    CPC分类号: H01G7/04

    摘要: The invention relates to electronic device having an operation temperature range, wherein the electronic device comprises a tunable capacitor (CST) comprising a first electrode (BE), a second electrode (TE), and a dielectric (FEL) arranged between the first electrode (BE) and the second electrode (TE). The dielectric (FEL) comprises dielectric material (FEL) having a value of a relative dielectric constant (∈r) varying at least within the operation temperature range. The electronic device further comprises a temperature varying means (RES) being thermally coupled to the tunable capacitor for providing a temperature of the dielectric (FEL) causing a predetermined capacitance of the tunable capacitor (CST). The invention, which relies on the idea of varying temperature to vary a capacitance of a capacitor stack, provides an alternative tunable capacitor type for the known types. Advantageous embodiments feature high-tuning ratio, small device area, and stable capacitance value in case the temperature is well controlled. The invention further relates to a semiconductor device comprising the electronic device in accordance with the invention, to an electronic circuit comprising such electronic device, and to a method of manufacturing such electronic device.

    摘要翻译: 本发明涉及具有操作温度范围的电子设备,其中电子设备包括可调谐电容器(CST),该可调谐电容器(CST)包括第一电极(BE),第二电极(TE)和电介质(FEL) BE)和第二电极(TE)。 电介质(FEL)包括具有至少在操作温度范围内变化的相对介电常数(εr)的值的电介质材料(FEL)。 电子设备还包括热耦合到可调电容器的温度变化装置(RES),用于提供导致可调谐电容器(CST)的预定电容的电介质的温度(FEL)。 依靠改变温度来改变电容器堆叠的电容的想法的本发明为已知类型提供了替代的可调谐电容器类型。 有利的实施例在温度受到良好控制的情况下具有高调节率,小的器件面积和稳定的电容值。 本发明还涉及包括根据本发明的电子设备的半导体器件,包括这种电子器件的电子电路以及制造这种电子器件的方法。

    TUNABLE CAPACITOR
    8.
    发明申请
    TUNABLE CAPACITOR 有权
    TUNABLE电容器

    公开(公告)号:US20110051309A1

    公开(公告)日:2011-03-03

    申请号:US12990044

    申请日:2009-04-29

    IPC分类号: H01G7/04

    CPC分类号: H01G7/04

    摘要: The invention relates to electronic device having an operation temperature range, wherein the electronic device comprises a tunable capacitor (CST) comprising a first electrode (BE), a second electrode (TE), and a dielectric (FEL) arranged between the first electrode (BE) and the second electrode (TE). The dielectric (FEL) comprises dielectric material (FEL) having a value of a relative dielectric constant (εr) varying at least within the operation temperature range. The electronic device further comprises a temperature varying means (RES) being thermally coupled to the tunable capacitor for providing a temperature of the dielectric (FEL) causing a predetermined capacitance of the tunable capacitor (CST). The invention, which relies on the idea of varying temperature to vary a capacitance of a capacitor stack, provides an alternative tunable capacitor type for the known types. Advantageous embodiments feature high-tuning ratio, small device area, and stable capacitance value in case the temperature is well controlled. The invention further relates to a semiconductor device comprising the electronic device in accordance with the invention, to an electronic circuit comprising such electronic device, and to a method of manufacturing such electronic device.

    摘要翻译: 本发明涉及具有操作温度范围的电子设备,其中电子设备包括可调谐电容器(CST),该可调谐电容器(CST)包括第一电极(BE),第二电极(TE)和电介质(FEL) BE)和第二电极(TE)。 电介质(FEL)包括具有至少在操作温度范围内变化的相对介电常数值(& r)的电介质材料(FEL)。 电子设备还包括热耦合到可调电容器的温度变化装置(RES),用于提供导致可调谐电容器(CST)的预定电容的电介质的温度(FEL)。 依靠改变温度来改变电容器堆叠的电容的想法的本发明为已知类型提供了替代的可调谐电容器类型。 有利的实施例在温度受到良好控制的情况下具有高调节率,小的器件面积和稳定的电容值。 本发明还涉及包括根据本发明的电子设备的半导体器件,包括这种电子器件的电子电路以及制造这种电子器件的方法。

    MEMS electrostatic actuator
    9.
    发明授权

    公开(公告)号:US09734951B2

    公开(公告)日:2017-08-15

    申请号:US13255479

    申请日:2010-03-10

    IPC分类号: H01G5/013 H01G5/011 H01G5/16

    CPC分类号: H01G5/0136 H01G5/011 H01G5/16

    摘要: A MEMS electrostatic actuator comprises first and second opposing electrode arrangements, wherein at least one of the electrode arrangements is movable. A dielectric material (24) is adjacent the one of the electrode arrangements (22). The second electrode arrangement is patterned such that it includes electrode areas (26) and spaces adjacent the electrode areas, wherein the dielectric material (24) extends at least partially in or over the spaces. The invention uses a multitude of electrode portions as one plate. The electric field lines thus form clusters between the individual electrode portions and the opposing electrode. This arrangement provides an extended range of continuous actuation and tunability.

    MEMS ELECTROSTATIC ACTUATOR
    10.
    发明申请
    MEMS ELECTROSTATIC ACTUATOR 有权
    MEMS静电执行器

    公开(公告)号:US20120055768A1

    公开(公告)日:2012-03-08

    申请号:US13255479

    申请日:2010-03-10

    IPC分类号: H01H59/00

    CPC分类号: H01G5/0136 H01G5/011 H01G5/16

    摘要: A MEMS electrostatic actuator comprises first and second opposing electrode arrangements, wherein at least one of the electrode arrangements is movable. A dielectric material (24) is adjacent the one of the electrode arrangements (22). The second electrode arrangement is patterned such that it includes electrode areas (26) and spaces adjacent the electrode areas, wherein the dielectric material (24) extends at least partially in or over the spaces. The invention uses a multitude of electrode portions as one plate. The electric field lines thus form clusters between the individual electrode portions and the opposing electrode. This arrangement provides an extended range of continuous actuation and tunability.

    摘要翻译: MEMS静电致动器包括第一和第二相对电极装置,其中电极装置中的至少一个是可移动的。 电介质材料(24)与电极装置(22)中的一个相邻。 第二电极布置被图案化,使得其包括电极区域(26)和邻近电极区域的空间,其中电介质材料(24)至少部分地延伸到空间中或上方。 本发明使用多个电极部分作为一个板。 因此,电场线在单个电极部分和相对电极之间形成簇。 这种布置提供了连续致动和可调性的延伸范围。