公开(公告)号：US08203912B2

公开(公告)日：2012-06-19

申请号：US12671108

申请日：2008-07-31

申请人： Aarnoud Laurens Roest ,  Klaus Reimann ,  Mareike Klee ,  Jozef Thomas Martinus van Beek ,  John Douglas Fraser

发明人： Aarnoud Laurens Roest ,  Klaus Reimann ,  Mareike Klee ,  Jozef Thomas Martinus van Beek ,  John Douglas Fraser

IPC分类号： H04R19/00 ,  H04R17/00

CPC分类号： B06B1/0292

摘要： A capacitive ultrasound transducer includes a first electrode, a second electrode, and a third electrode, the third electrode including a central region disposed in collapsibly spaced relation with the first electrode, and a peripheral region disposed outward of the central region and disposed in collapsibly spaced relation with the second electrode. The transducer further includes a layer of a high dielectric constant material disposed between the third electrode and the first electrode, and between the third electrode and the second electrode. The transducer may be operable in a collapsed mode wherein the peripheral region of the third electrode oscillates relative to the second electrode, and the central region of the third electrode is fully collapsed with respect to the first electrode such that the dielectric layer is sandwiched therebetween. Piezoelectric actuation, such as d31 and d33 mode piezoelectric actuation, may further be included. A medical imaging system includes an array of such capacitive ultrasound transducers disposed on a common substrate.

摘要翻译： 电容式超声波换能器包括第一电极，第二电极和第三电极，所述第三电极包括与所述第一电极以可折叠间隔开的关系设置的中心区域，以及设置在所述中心区域外侧的周边区域， 与第二电极的关系。 换能器还包括设置在第三电极和第一电极之间以及第三电极和第二电极之间的高介电常数材料层。 换能器可以以折叠模式操作，其中第三电极的周边区域相对于第二电极振荡，并且第三电极的中心区域相对于第一电极完全折叠，使得介电层夹在其间。 可以进一步包括诸如d31和d33模式压电致动的压电致动。 医疗成像系统包括设置在公共基底上的这种电容式超声换能器阵列。

公开(公告)号：US20100202254A1

公开(公告)日：2010-08-12

申请号：US12671108

申请日：2008-07-31

申请人： Aarnoud Laurens Roest ,  Klaus Reimann ,  Mareike Klee ,  Jozef Thomas Martinus Van Beek ,  John Douglas Fraser

发明人： Aarnoud Laurens Roest ,  Klaus Reimann ,  Mareike Klee ,  Jozef Thomas Martinus Van Beek ,  John Douglas Fraser

IPC分类号： B06B1/06

CPC分类号： B06B1/0292

摘要： A capacitive ultrasound transducer includes a first electrode, a second electrode, and a third electrode, the third electrode including a central region disposed in collapsibly spaced relation with the first electrode, and a peripheral region disposed outward of the central region and disposed in collapsibly spaced relation with the second electrode. The transducer further includes a layer of a high dielectric constant material disposed between the third electrode and the first electrode, and between the third electrode and the second electrode. The transducer may be operable in a collapsed mode wherein the peripheral region of the third electrode oscillates relative to the second electrode, and the central region of the third electrode is fully collapsed with respect to the first electrode such that the dielectric layer is sandwiched therebetween. Piezoelectric actuation, such as d31 and d33 mode piezoelectric actuation, may further be included. A medical imaging system includes an array of such capacitive ultrasound transducers disposed on a common substrate.

摘要翻译： 电容式超声波换能器包括第一电极，第二电极和第三电极，所述第三电极包括与所述第一电极以可折叠间隔开的关系设置的中心区域，以及设置在所述中心区域外侧的周边区域， 与第二电极的关系。 换能器还包括设置在第三电极和第一电极之间以及第三电极和第二电极之间的高介电常数材料层。 换能器可以以折叠模式操作，其中第三电极的周边区域相对于第二电极振荡，并且第三电极的中心区域相对于第一电极完全折叠，使得介电层夹在其间。 可以进一步包括诸如d31和d33模式压电致动的压电致动。 医疗成像系统包括设置在公共基底上的这种电容式超声换能器阵列。

公开(公告)号：US20110198725A1

公开(公告)日：2011-08-18

申请号：US13125822

申请日：2009-10-24

申请人： Aarnoud Laurens Roest ,  Mareike Klee ,  Rudiger Mauczox ,  Klaus Reimann ,  Michael Joehren

发明人： Aarnoud Laurens Roest ,  Mareike Klee ,  Rudiger Mauczox ,  Klaus Reimann ,  Michael Joehren

IPC分类号： H01L27/06 ,  G01R31/12 ,  G11C11/22

CPC分类号： H01L27/0251 ,  G11C11/22 ,  G11C11/221 ,  H01L27/11502 ,  H01L28/55

摘要： The present invention relates to an electric component comprising at least one first MIM capacitor having a ferroelectric insulator with a dielectric constant of at least 100 between a first capacitor electrode of a first electrode material and a second capacitor electrode of a second electrode material. The first and second electrode materials are selected such that the first MIM capacitor exhibits, as a function of a DC voltage applicable between the first and second electrodes, an asymmetric capacity hysteresis that lets the first MIM capacitor, in absence of the DC voltage, assume one of at least two possible distinct capacitance values, in dependence on a polarity of a switching voltage last applied to the capacitor, the switching voltage having an amount larger than a threshold-voltage amount. The invention is applicable for ESD sensors, memories and high-frequency devices.

摘要翻译： 本发明涉及一种电气部件，包括至少一个第一MIM电容器，其具有在第一电极材料的第一电容器电极和第二电极材料的第二电容器电极之间具有至少100的介电常数的铁电绝缘体。 选择第一和第二电极材料，使得第一MIM电容器作为可应用于第一和第二电极之间的DC电压的函数表现出不对称的电容滞后，使第一MIM电容器在没有直流电压的情况下呈现 根据最后施加到电容器的开关电压的极性，开关电压具有大于阈值电压量的量的至少两个可能的不同电容值中的一个。 本发明适用于ESD传感器，存储器和高频器件。

公开(公告)号：US08531862B2

公开(公告)日：2013-09-10

申请号：US13125822

申请日：2009-10-24

申请人： Aarnoud Laurens Roest ,  Mareike Klee ,  Rudiger Mauczok ,  Klaus Reimann ,  Michael Joehren

发明人： Aarnoud Laurens Roest ,  Mareike Klee ,  Rudiger Mauczok ,  Klaus Reimann ,  Michael Joehren

IPC分类号： G11C11/22 ,  H02H3/22 ,  H03B5/20

CPC分类号： H01L27/0251 ,  G11C11/22 ,  G11C11/221 ,  H01L27/11502 ,  H01L28/55

摘要： The present invention relates to an electric component comprising at least one first MIM capacitor having a ferroelectric insulator with a dielectric constant of at least 100 between a first capacitor electrode of a first electrode material and a second capacitor electrode of a second electrode material. The first and second electrode materials are selected such that the first MIM capacitor exhibits, as a function of a DC voltage applicable between the first and second electrodes, an asymmetric capacitance hysteresis that lets the first MIM capacitor, in absence of the DC voltage, assume one of at least two possible distinct capacitance values, in dependence on a polarity of a switching voltage last applied to the capacitor, the switching voltage having an amount larger than a threshold-voltage amount. The invention is applicable for ESD sensors, memories and high-frequency devices.

摘要翻译： 本发明涉及一种电气部件，包括至少一个第一MIM电容器，其具有在第一电极材料的第一电容器电极和第二电极材料的第二电容器电极之间具有至少100的介电常数的铁电绝缘体。 选择第一和第二电极材料，使得第一MIM电容器作为可应用于第一和第二电极之间的DC电压的函数表现出不对称电容滞后，其使第一MIM电容器在没有DC电压的情况下呈现 根据最后施加到电容器的开关电压的极性，开关电压具有大于阈值电压量的量的至少两个可能的不同电容值中的一个。 本发明适用于ESD传感器，存储器和高频器件。

公开(公告)号：US08901705B2

公开(公告)日：2014-12-02

申请号：US13126233

申请日：2009-10-22

申请人： Aarnoud Laurens Roest ,  Mareike Klee ,  Rudiger Gunter Mauczok ,  Linda Van Leuken-Peters ,  Robertus Adrianus Maria Wolters

发明人： Aarnoud Laurens Roest ,  Mareike Klee ,  Rudiger Gunter Mauczok ,  Linda Van Leuken-Peters ,  Robertus Adrianus Maria Wolters

IPC分类号： H01L27/06 ,  H01L49/02 ,  H01L23/522

CPC分类号： H01L28/55 ,  H01L23/5223 ,  H01L23/5228 ,  H01L27/0688 ,  H01L28/20 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention relates to an electronic component, that comprises, on a substrate, at least one integrated MIM capacitor, (114) an electrically insulating first cover layer (120) which partly or fully covers the top capacitor electrode (118) and is made of a lead-containing dielectric material, and a top barrier layer (122) on the first cover layer. The top barrier layer serves for avoiding a reduction of lead atoms comprised by the first cover layer under exposure of the first cover layer to a reducing substance. An electrically insulating second cover layer (124) on the top barrier layer has a dielectric permittivity smaller than that of the first cover layer establishes a low parasitic capacitance of the cover-layer structure. The described cover-layer structure with the intermediate top barrier layer allows to fabricate a high-accuracy resistor layer (126.1) on top.

摘要翻译： 电子部件技术领域本发明涉及一种电子部件，其在基板上包括至少一个集成MIM电容器，（114）部分地或完全覆盖顶部电容器电极（118）并被制成的电绝缘的第一覆盖层（120） 的含铅介电材料，以及在第一覆盖层上的顶部阻挡层（122）。 顶部阻挡层用于避免在第一覆盖层暴露于还原物质时第一覆盖层所包含的引线原子的还原。 在顶部阻挡层上的电绝缘的第二覆盖层（124）的介电常数比第一覆盖层的介电常数小，从而形成覆盖层结构的低寄生电容。 所描述的具有中间顶部阻挡层的覆盖层结构允许在顶部制造高精度电阻层（126.1）。

公开(公告)号：US20110204480A1

公开(公告)日：2011-08-25

申请号：US13126233

申请日：2009-10-22

申请人： Aarnoud Laurens Roest ,  Mareike Klee ,  Rudiger Gunter Mauczok ,  Linda Van Leuken-Peters ,  Robertus Adrianus Maria Wolters

发明人： Aarnoud Laurens Roest ,  Mareike Klee ,  Rudiger Gunter Mauczok ,  Linda Van Leuken-Peters ,  Robertus Adrianus Maria Wolters

IPC分类号： H01L29/92 ,  H01L21/02

CPC分类号： H01L28/55 ,  H01L23/5223 ,  H01L23/5228 ,  H01L27/0688 ,  H01L28/20 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention relates to an electronic component, that comprises, on a substrate, at least one integrated MIM capacitor, (114) an electrically insulating first cover layer (120) which partly or fully covers the top capacitor electrode (118) and is made of a lead-containing dielectric material, and a top barrier layer (122) on the first cover layer. The top barrier layer serves for avoiding a reduction of lead atoms comprised by the first cover layer under exposure of the first cover layer to a reducing substance. An electrically insulating second cover layer (124) on the top barrier layer has a dielectric permittivity smaller than that of the first cover layer establishes a low parasitic capacitance of the cover-layer structure. The described cover-layer structure with the intermediate top barrier layer allows to fabricate a high-accuracy resistor layer (126.1) on top.

摘要翻译： 电子部件技术领域本发明涉及一种电子部件，其在基板上包括至少一个集成MIM电容器，（114）部分地或完全覆盖顶部电容器电极（118）并被制成的电绝缘的第一覆盖层（120） 的含铅介电材料，以及在第一覆盖层上的顶部阻挡层（122）。 顶部阻挡层用于避免在第一覆盖层暴露于还原物质时第一覆盖层所包含的引线原子的还原。 在顶部阻挡层上的电绝缘的第二覆盖层（124）的介电常数比第一覆盖层的介电常数小，从而形成覆盖层结构的低寄生电容。 所描述的具有中间顶部阻挡层的覆盖层结构允许在顶部制造高精度电阻层（126.1）。

公开(公告)号：US20110137166A1

公开(公告)日：2011-06-09

申请号：US13058370

申请日：2009-08-10

申请人： Mareike Klee ,  Michael Harald Kuhn ,  Karen Irene Trovato ,  Christianus Martinus Van Heesch ,  Ruediger Mauczok ,  Marco De Wild ,  Biju Kumar Sreedharan Nair ,  Klaus Reimann

发明人： Mareike Klee ,  Michael Harald Kuhn ,  Karen Irene Trovato ,  Christianus Martinus Van Heesch ,  Ruediger Mauczok ,  Marco De Wild ,  Biju Kumar Sreedharan Nair ,  Klaus Reimann

IPC分类号： A61B8/00

CPC分类号： A61B8/485 ,  A61B8/4281 ,  A61B8/4416 ,  A61B8/4472 ,  A61B8/4483 ,  A61B8/4494 ,  A61B2562/0204 ,  A61B2562/164 ,  B06B1/0292 ,  G01H11/06 ,  G10K9/125

摘要： The present invention relates to a transducer arrangement, particularly a transducer arrangement for acquiring tissue information, a method for using a transducer arrangement for acquiring tissue information and a glove which comprises a transducer arrangement. The transducer arrangement 21 for analysing material 40 comprises: a first transducer element 51 for inducing and receiving mechanical displacements in the material to be analysed 40; and an analysing unit 30. The transducer arrangement is arranged such as to be flexible in order to conform with a curved surface of the material to be analysed 40; and the transducer arrangement 21 is adapted to derive a first signal from a low frequency spectrum of mechanical displacements which first signal correlates to sono-elastographical properties of a material to be analysed 40; and the transducer arrangement 21 is adapted to derive a second signal from a high frequency spectrum of mechanical displacements received by the first transducer element 51 which second signal correlates to ultrasonic properties of a material to be analysed 40. With a transducer arrangement according to the invention it may be possible to generate information about the topographical anatomy and information about elastical properties of the material to be analyzed in parallel, whereby the transducer arrangement may be adapted to the unevenness of the material's surface optimally due to its flexibility which may allow the examiner or user of the transducer arrangement to analyze regions which normally may have an uneven surface profile, which may only be reached with difficulty or whose examination may cause inconvenience to the examiner as well as to the person that is being examined.

摘要翻译： 本发明涉及一种换能器装置，特别是一种用于获取组织信息的换能器装置，一种使用换能器装置来获取组织信息的方法和一种包括换能器装置的手套。 用于分析材料40的换能器装置21包括：用于诱导和接收待分析材料40中的机械位移的第一换能器元件51; 和分析单元30.换能器装置布置成柔性以便与要分析的材料40的曲面一致; 并且换能器装置21适于从低频谱的机械位移导出第一信号，第一信号与要分析的材料40的声弹性特性相关; 并且换能器装置21适于从由第一换能器元件51接收的机械位移的高频谱导出第二信号，第二信号与待分析的材料的超声波属性相关。使用根据本发明的换能器装置 有可能产生关于地形解剖学的信息和关于要分析的材料的弹性特性的信息并行地进行，由此，换能器装置可以由于其灵活性而适应于材料表面的不均匀性，其灵活性可允许检查者或 换能器装置的使用者分析通常可能具有不平坦表面轮廓的区域，其可能只能难以达到或者检查可能对检查者以及被检查者造成不便。

公开(公告)号：US08193685B2

公开(公告)日：2012-06-05

申请号：US12666831

申请日：2008-06-30

申请人： Mareike Klee ,  Ronald Dekker ,  Harry Van Esch ,  Marco De Wild ,  Ruediger Mauczok ,  Chris Van Heesch ,  Willem Franke Pasveer ,  Engel Johannes Knibbe ,  Remco Alphonsus Hendrikus Breen ,  Klaus Reimann ,  Biju Kumar Sreedharan Nair ,  Roger Peter Anna Delnoij ,  Henri Marie Joseph Boots ,  Christina Adriana Renders ,  Olaf Wunnicke ,  Derk Reefman ,  Peter Dirksen

发明人： Mareike Klee ,  Ronald Dekker ,  Harry Van Esch ,  Marco De Wild ,  Ruediger Mauczok ,  Chris Van Heesch ,  Willem Franke Pasveer ,  Engel Johannes Knibbe ,  Remco Alphonsus Hendrikus Breen ,  Klaus Reimann ,  Biju Kumar Sreedharan Nair ,  Roger Peter Anna Delnoij ,  Henri Marie Joseph Boots ,  Christina Adriana Renders ,  Olaf Wunnicke ,  Derk Reefman ,  Peter Dirksen

IPC分类号： H01L41/08

CPC分类号： B06B1/0603 ,  B06B1/0292 ,  G08B13/1645 ,  H01L27/20 ,  H01L41/0973 ,  H01L41/314 ,  Y10T29/42

摘要： A transducer (800) is provided where a membrane (830) is formed over a front substrate (615); and a piezoelectric layer (820) is formed over the membrane (830) at an active portion (821) and peripheral portions located adjacent the active portion (821). A patterned conductive layer including first and second electrodes (840, 845) is formed over the piezoelectric layer (820). Further, a back substrate structure is provided having supports (822, 824) located at the peripheral portions adjacent the active portion (821). The height (826) of the supports (822, 824) is greater than a combined height (828) of the patterned piezoelectric layer and the patterned conductive layer. Many transducers may be connected to form an array, where a controller may be provided for controlling the array, such as steering a beam of the array, and processing signals received by the array, for presence or motion detection and/or imaging, for example.

摘要翻译： 提供换能器（800），其中膜（830）形成在前基板（615）上方; 并且在有源部分（821）和靠近有效部分（821）的周边部分之间在膜（830）上形成压电层（820）。 包括第一和第二电极（840,845）的图案化导电层形成在压电层（820）上方。 此外，背面基板结构设置有位于与活动部分（821）相邻的周边部分处的支撑件（822,824）。 支撑件（822,824）的高度（826）大于图案化压电层和图案化导电层的组合高度（828）。 可以连接许多换能器以形成阵列，其中可以提供用于控制阵列的控制器，例如转向阵列的波束，以及处理由阵列接收的信号，用于存在或运动检测和/或成像，例如 。

公开(公告)号：US20100277040A1

公开(公告)日：2010-11-04

申请号：US12666831

申请日：2008-06-30

申请人： Mareike Klee ,  Klaus Reimann ,  Biju K. Sreedharan Nair ,  Roger Peter Anna Delnoij ,  Henri M. J. Boots ,  Christina A. Renders ,  Olaf Wunnicke ,  Derk Reefman ,  Peter Dirksen ,  Ronald Dekker ,  Harry Van Esch ,  Marco De Wild ,  Ruediger Mauczok ,  Chris Van Heesch ,  Willem F. Pasveer ,  Engel Johannes Knibbe ,  Remco A.H. Breen

发明人： Mareike Klee ,  Klaus Reimann ,  Biju K. Sreedharan Nair ,  Roger Peter Anna Delnoij ,  Henri M. J. Boots ,  Christina A. Renders ,  Olaf Wunnicke ,  Derk Reefman ,  Peter Dirksen ,  Ronald Dekker ,  Harry Van Esch ,  Marco De Wild ,  Ruediger Mauczok ,  Chris Van Heesch ,  Willem F. Pasveer ,  Engel Johannes Knibbe ,  Remco A.H. Breen

IPC分类号： H01L41/04 ,  H04R17/00 ,  H01L41/053

CPC分类号： B06B1/0603 ,  B06B1/0292 ,  G08B13/1645 ,  H01L27/20 ,  H01L41/0973 ,  H01L41/314 ,  Y10T29/42

摘要： A transducer (800) is provided where a membrane (830) is formed over a front substrate (615); and a piezoelectric layer (820) is formed over the membrane (830) at an active portion (821) and peripheral portions located adjacent the active portion (821). A patterned conductive layer including first and second electrodes (840, 845) is formed over the piezoelectric layer (820). Further, a back substrate structure is provided having supports (822, 824) located at the peripheral portions adjacent the active portion (821). The height (826) of the supports (822, 824) is greater than a combined height (828) of the patterned piezoelectric layer and the patterned conductive layer. Many transducers may be connected to form an array, where a controller may be provided for controlling the array, such as steering a beam of the array, and processing signals received by the array, for presence or motion detection and/or imaging, for example.

摘要翻译： 提供换能器（800），其中膜（830）形成在前基板（615）上方; 并且在有源部分（821）和靠近有效部分（821）的周边部分之间在膜（830）上形成压电层（820）。 包括第一和第二电极（840,845）的图案化导电层形成在压电层（820）上方。 此外，背面基板结构设置有位于与活动部分（821）相邻的周边部分处的支撑件（822,824）。 支撑件（822,824）的高度（826）大于图案化压电层和图案化导电层的组合高度（828）。 可以连接许多换能器以形成阵列，其中可以提供用于控制阵列的控制器，例如控制阵列的波束，以及处理由阵列接收的信号，用于存在或运动检测和/或成像，例如 。

公开(公告)号：US20100182730A1

公开(公告)日：2010-07-22

申请号：US12447078

申请日：2007-10-19

申请人： Danielle Beelen ,  Mareike Klee ,  Klaus Reimann ,  Wilhelmus C. Keur ,  Rüdiger Mauczok

发明人： Danielle Beelen ,  Mareike Klee ,  Klaus Reimann ,  Wilhelmus C. Keur ,  Rüdiger Mauczok

IPC分类号： H01G7/06 ,  H01G7/00

CPC分类号： H01G7/06 ,  H01G7/028

摘要： The present invention relates to a ferroelectric varactor (400) that comprises a dielectric-layer stack (408) between electrodes (406, 410). The dielectric-layer stack comprises an alternating layer sequence of at least three dielectric layers. At cc least two first dielectric layers of the dielectric-layer stack are made of a non-single-crystalline first dielectric material having a first dielectric constant, at least one second dielectric layer of the dielectric-layer stack is made of a non-single-crystalline second dielectric material with a second dielectric constant that differs from the first dielectric constant. One of the first and second dielectric materials exhibits a weaker ferroelectric hysteresis. The dielectric material with the weaker ferroelectric hysteresis makes up more than 20% of the total volume of the dielectric-layer stack. The ferroelectric varactor of the present invention achieves high relative dielectric permittivities in the dielectric layers, a high breakdown voltage, a large tuning range at low voltages, and low dielectric losses.

摘要翻译： 本发明涉及一种铁电变容二极管（400），其包括电极（406,410）之间的电介质层叠层（408）。 介电层堆叠包括至少三个电介质层的交替层序列。 在cc的介电层堆叠的至少两个第一电介质层由具有第一介电常数的非单晶第一介电材料制成，介电层堆叠的至少一个第二介电层由非单一的 具有不同于第一介电常数的第二介电常数的晶体第二电介质材料。 第一和第二介电材料之一表现出较弱的铁电滞后。 具有较弱的铁电滞后的电介质材料占电介质层叠层总体积的20％以上。 本发明的铁电变容二极管在电介质层中实现高相对介电常数，高击穿电压，低电压下的大调谐范围以及低介电损耗。