公开(公告)号：US11942343B2

公开(公告)日：2024-03-26

申请号：US17162108

申请日：2021-01-29

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Chien-Li Chen ,  Steven R. Walther

IPC: H01L21/67 ,  C23C14/48 ,  C23C14/54 ,  G01B7/06 ,  G01B11/08 ,  G01K3/00 ,  G01S7/481 ,  G01S17/08 ,  H01L21/265 ,  H01L21/324 ,  H01L21/66

CPC classification number: H01L21/67248 ,  C23C14/48 ,  C23C14/541 ,  G01B7/08 ,  G01B11/08 ,  G01K3/005 ,  G01S7/4814 ,  G01S17/08 ,  H01L21/265 ,  H01L21/324 ,  H01L21/67115 ,  H01L22/12 ,  H01L22/26

Abstract: The present disclosure relates generally to ion implantation, and more particularly, to systems and processes for measuring the temperature of a wafer within an ion implantation system. An exemplary ion implantation system may include a robotic arm, one or more load lock chambers, a pre-implantation station, an ion implanter, a post-implantation station, and a controller. The pre-implantation station is configured to heat or cool a wafer prior to the wafer being implanted with ions by the ion implanter. The post-implantation station is configured to heat or cool a wafer after the wafer is implanted with ions by the ion implanter. The pre-implantation station and/or post-implantation station are further configured to measure a current temperature of a wafer. The controller is configured to control the various components and processes described above, and to determine a current temperature of a wafer based on information received from the pre-implantation station and/or post-implantation station.

公开(公告)号：US10984524B2

公开(公告)日：2021-04-20

申请号：US16185133

申请日：2018-11-09

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Chien-Li Chen ,  Yu-Ho Ni ,  Chien-Cheng Kuo ,  Te-min Wang

IPC: G06T7/00 ,  G06T7/73 ,  H01L21/68

Abstract: A method for calibrating element in a semiconductor processing device with a camera is provided. The method for calibrating element in a semiconductor processing device with a camera includes taking a first picture of a first element by a camera; providing a first actuator to move the first element an increment along a first direction; taking a second picture of the first element by the camera; and comparing the first picture and the second picture to calibrate the first element. A system for calibrating element in a semiconductor processing device with a camera is also provided.

公开(公告)号：US20190197675A1

公开(公告)日：2019-06-27

申请号：US16185133

申请日：2018-11-09

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Chien-Li Chen ,  Yu-Ho Ni ,  Chien-Cheng Kuo ,  Te-min Wang

IPC: G06T7/00 ,  H01L21/68 ,  G06T7/73

CPC classification number: G06T7/001 ,  G06T7/74 ,  G06T2207/30164 ,  H01L21/681

Abstract: A method for calibrating element in a semiconductor processing device with a camera is provided. The method for calibrating element in a semiconductor processing device with a camera includes taking a first picture of a first element by a camera; providing a first actuator to move the first element an increment along a first direction; taking a second picture of the first element by the camera; and comparing the first picture and the second picture to calibrate the first element. A system for calibrating element in a semiconductor processing device with a camera is also provided.