公开(公告)号：US12267961B2

公开(公告)日：2025-04-01

申请号：US18420528

申请日：2024-01-23

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Chien-Fan Chen ,  Chien-Hao Wang

IPC: H05K1/18 ,  H01L21/48 ,  H01L21/56 ,  H01L23/538

Abstract: A manufacturing method of an embedded component package structure includes the following steps: providing a carrier and forming a semi-cured first dielectric layer on the carrier, the semi-cured first dielectric layer having a first surface; providing a component on the semi-cured first dielectric layer, and respectively providing heat energies from a top and a bottom of the component to cure the semi-cured first dielectric layer; forming a second dielectric layer on the first dielectric layer to cover the component; and forming a patterned circuit layer on the second dielectric layer, the patterned circuit layer being electrically connected to the component.

公开(公告)号：US11882660B2

公开(公告)日：2024-01-23

申请号：US18095511

申请日：2023-01-10

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Chien-Fan Chen ,  Chien-Hao Wang

IPC: H05K1/18 ,  H01L21/48 ,  H01L23/538 ,  H01L21/56

CPC classification number: H05K1/183 ,  H01L21/486 ,  H01L21/4857 ,  H01L21/568 ,  H01L23/5383 ,  H01L23/5386 ,  H01L2224/04105 ,  H01L2924/11 ,  H01L2924/15153 ,  H05K2201/10

Abstract: A manufacturing method of an embedded component package structure includes the following steps: providing a carrier and forming a semi-cured first dielectric layer on the carrier, the semi-cured first dielectric layer having a first surface; providing a component on the semi-cured first dielectric layer, and respectively providing heat energies from a top and a bottom of the component to cure the semi-cured first dielectric layer; forming a second dielectric layer on the first dielectric layer to cover the component; and forming a patterned circuit layer on the second dielectric layer, the patterned circuit layer being electrically connected to the component.

公开(公告)号：US10950551B2

公开(公告)日：2021-03-16

申请号：US16397539

申请日：2019-04-29

Applicant: ADVANCED SEMICONDUCTOR ENGINEERING, INC.

Inventor： Yu-Ju Liao ,  Chien-Fan Chen ,  Chien-Hao Wang

IPC: H01L23/538 ,  H01L21/48 ,  H05K3/46 ,  H01L21/67 ,  H01L23/31

Abstract: An embedded component package structure including a dielectric structure and a component is provided. The component is embedded in the dielectric structure and is provided with a plurality of conductive pillars. The conductive pillars are exposed from an upper surface of the dielectric structure and have a first thickness and a second thickness, respectively, and the first thickness is not equal to the second thickness.

公开(公告)号：US11296030B2

公开(公告)日：2022-04-05

申请号：US16397530

申请日：2019-04-29

Applicant: ADVANCED SEMICONDUCTOR ENGINEERING, INC.

Inventor： Yu-Ju Liao ,  Chien-Fan Chen ,  Chien-Hao Wang

IPC: H05K3/46 ,  H01L23/538 ,  H01L21/48

Abstract: An embedded component package structure including a dielectric structure, a semiconductor chip, a first polymer layer, and a patterned conductive layer is provided. The semiconductor chip is embedded in the dielectric structure. The first polymer layer covers the semiconductor chip and has a first thickness, and the first thickness is greater than a second thickness of the dielectric structure above the first polymer layer. The patterned conductive layer covers an upper surface of the dielectric structure and extends over the first polymer layer, and the patterned conductive layer is electrically connected to the semiconductor chip.

公开(公告)号：US11553596B2

公开(公告)日：2023-01-10

申请号：US17342363

申请日：2021-06-08

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Chien-Fan Chen ,  Chien-Hao Wang

IPC: H05K7/00 ,  H05K1/18 ,  H01L21/48 ,  H01L23/538 ,  H01L21/56

Abstract: A manufacturing method of an embedded component package structure includes the following steps: providing a carrier and forming a semi-cured first dielectric layer on the carrier, the semi-cured first dielectric layer having a first surface; providing a component on the semi-cured first dielectric layer, and respectively providing heat energies from a top and a bottom of the component to cure the semi-cured first dielectric layer; forming a second dielectric layer on the first dielectric layer to cover the component; and forming a patterned circuit layer on the second dielectric layer, the patterned circuit layer being electrically connected to the component.

公开(公告)号：US11277917B2

公开(公告)日：2022-03-15

申请号：US16351026

申请日：2019-03-12

Applicant: ADVANCED SEMICONDUCTOR ENGINEERING, INC.

Inventor： Yu-Ju Liao ,  Chien-Fan Chen ,  Chien-Hao Wang ,  I-Chia Lin

IPC: H05K1/18 ,  H01L21/48 ,  H01L23/00 ,  H01L23/498

Abstract: An embedded component package structure including a circuit substrate, an embedded component and a stress compensation layer is provided. The circuit substrate includes a core layer and an asymmetric circuit structure, and the core layer has a first thickness. The embedded component is disposed in the core layer. The stress compensation layer is disposed on one side of the core layer, and the stress compensation layer has a second thickness between 4 μm and 351 μm.

公开(公告)号：US11032911B2

公开(公告)日：2021-06-08

申请号：US16942609

申请日：2020-07-29

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Chien-Fan Chen ,  Chien-Hao Wang

IPC: H05K7/00 ,  H05K1/18 ,  H01L21/48 ,  H01L23/538 ,  H01L21/56

Abstract: A manufacturing method of an embedded component package structure includes the following steps: providing a carrier and forming a semi-cured first dielectric layer on the carrier, the semi-cured first dielectric layer having a first surface; providing a component on the semi-cured first dielectric layer, and respectively providing heat energies from a top and a bottom of the component to cure the semi-cured first dielectric layer; forming a second dielectric layer on the first dielectric layer to cover the component; and forming a patterned circuit layer on the second dielectric layer, the patterned circuit layer being electrically connected to the component.

公开(公告)号：US10757813B2

公开(公告)日：2020-08-25

申请号：US16159264

申请日：2018-10-12

Applicant: ADVANCED SEMICONDUCTOR ENGINEERING, INC.

Inventor： Chien-Fan Chen ,  Chien-Hao Wang

IPC: H05K1/18 ,  H01L21/48 ,  H01L23/538 ,  H01L21/56

Abstract: A manufacturing method of an embedded component package structure includes the following steps: providing a carrier and forming a semi-cured first dielectric layer on the carrier, the semi-cured first dielectric layer having a first surface; providing a component on the semi-cured first dielectric layer, and respectively providing heat energies from a top and a bottom of the component to cure the semi-cured first dielectric layer; forming a second dielectric layer on the first dielectric layer to cover the component; and forming a patterned circuit layer on the second dielectric layer, the patterned circuit layer being electrically connected to the component.