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    THERMAL INSULATOR AND METHOD OF MANUFACTURING THE SAME
    1.
    发明申请
    THERMAL INSULATOR AND METHOD OF MANUFACTURING THE SAME 审中-公开
    热绝缘体及其制造方法

    公开(公告)号：US20130266801A1

    公开(公告)日：2013-10-10

    申请号：US13993849

    申请日：2011-12-13

    申请人： Akifumi Sakamoto ,  Yoshihiko Goto ,  Yasuo Ito ,  Ken Maeda

    发明人： Akifumi Sakamoto ,  Yoshihiko Goto ,  Yasuo Ito ,  Ken Maeda

    IPC分类号： B28B11/24 ,  F27D7/06

    CPC分类号： C04B35/6269 ,  B28B11/24 ,  B28B11/243 ,  B28B11/247 ,  C04B30/02 ,  C04B2111/28 ,  F27D7/06 ,  Y10T428/268 ,  C04B14/062 ,  C04B14/4631 ,  C04B38/0038 ,  C04B40/0259 ,  C04B40/0263

    摘要： A thermal insulator with both excellent heat insulation and strength and a method of manufacturing the thermal insulator are provided. A thermal insulator according to the present invention includes metal oxide fine particles with an average particle diameter equal to or smaller than 50 nm and a reinforcing fiber, wherein the thermal insulator has a bridge structure between the metal oxide fine particles which is formed by elution of part of the metal oxide fine particles. A method of manufacturing a thermal insulator according to the present invention includes a curing step of curing a dry pressed compact including metal oxide fine particles with an average particle diameter equal to or smaller than 50 nm and a reinforcing fiber under a pressurized vapor saturated atmosphere at a temperature equal to or higher than 100° C. for four hours and a drying step of drying the cured dry pressed compact.

    摘要翻译： 提供绝热性和绝缘性优异的绝热体和制造绝热体的方法。 根据本发明的绝热体包括平均粒径等于或小于50nm的金属氧化物微粒和增强纤维，其中所述绝热体在通过溶出形成的金属氧化物细颗粒之间具有桥结构 部分金属氧化物细颗粒。 根据本发明的制造绝热体的方法包括固化步骤，其将包含平均粒径等于或小于50nm的金属氧化物细颗粒的干式压制体和在加压蒸汽饱和气氛下的增强纤维固化 温度等于或高于100℃4小时，干燥步骤干燥固化的干压制成型体。

    Process for producing 1,1,1-trifluoroacetone
    5.
    发明授权
    Process for producing 1,1,1-trifluoroacetone 失效
    制备1,1,1-三氟丙酮的方法

    公开(公告)号：US06340776B2

    公开(公告)日：2002-01-22

    申请号：US09789001

    申请日：2001-02-21

    申请人： Yoshihiko Goto ,  Ryo Nadano ,  Takashi Sakaya ,  Takayuki Nishimiya

    发明人： Yoshihiko Goto ,  Ryo Nadano ,  Takashi Sakaya ,  Takayuki Nishimiya

    IPC分类号： C07C4563

    CPC分类号： C07C45/65 ,  C07C49/167

    摘要： A process for producing 1,1,1-trifluoroacetone includes the step of conducting a hydrogenolysis of a halogenated trifluoroacetone, which is represented by the general formula (1), by a hydrogen gas in the presence of a catalyst containing a transition metal, where X represents a chlorine, bromine or iodine, and n represents an integer from 1 to 3. It is possible to obtain 1,1,1-trifluoroacetone with a high yield by using the special catalyst.

    摘要翻译： 制备1,1,1-三氟丙酮的方法包括在含有过渡金属的催化剂存在下，通过氢气进行由通式（1）表示的卤代三氟丙酮的氢解的步骤，其中 X表示氯，溴或碘，n表示1〜3的整数。通过使用特殊催化剂，可以获得高收率的1,1,1-三氟丙酮。

    Thin-film multilayered electrode, high-frequency resonator, and high-frequency transmission line
    6.
    发明授权
    Thin-film multilayered electrode, high-frequency resonator, and high-frequency transmission line 失效
    薄膜多层电极，高频谐振器和高频传输线

    公开(公告)号：US5920244A

    公开(公告)日：1999-07-06

    申请号：US786691

    申请日：1997-01-22

    申请人： Masato Kobayashi ,  Yoshihiko Goto ,  Yukio Yoshino ,  Yuzo Katayama

    发明人： Masato Kobayashi ,  Yoshihiko Goto ,  Yukio Yoshino ,  Yuzo Katayama

    IPC分类号： H01P1/203 ,  H01P3/08 ,  H01P3/18 ,  H01P7/10 ,  H01P3/00 ,  H01P7/00

    CPC分类号： H01P3/088 ,  H01P1/203 ,  H01P7/10

    摘要： An inexpensive and reliable thin-film multilayered electrode which is formable on a dielectric substrate such as a ceramic substrate. A thin-film multilayered electrode has thin-film conductors and thin-film dielectrics formed by alternately layering on a dielectric substrate with a predetermined dielectric constant. The dielectric constant for each of the thin-film dielectrics is selected such that the electromagnetic field created in the dielectric substrate and the electromagnetic field created in each of the thin-film dielectrics are substantially in phase with each other when the thin-film multilayered electrode is used at a predetermined frequency, and the film thickness of each of the thin-film dielectrics falls between 0.2 .mu.m and 2 .mu.m; and the film thickness of each of the thin-film conductors, other than a thin-film conductor formed most distant from the dielectric substrate, is thinner than the skin depth at the predetermined frequency.

    摘要翻译： 一种廉价可靠的薄膜多层电极，其可以在诸如陶瓷衬底的电介质衬底上形成。 薄膜多层电极具有薄膜导电体和薄膜电介质，薄膜电介质是通过在介电基片上以预定的介电常数交替分层而形成的。 选择每个薄膜电介质的介电常数，使得当电介质基板中产生的电磁场和在每个薄膜电介质中产生的电磁场基本上彼此同相时，薄膜多层电极 以预定频率使用，薄膜电介质的膜厚在0.2μm〜2μm之间; 并且除了形成在最远离电介质基板的薄膜导体之外的每个薄膜导​​体的薄膜厚度比预定频率处的趋肤深度薄。

    Method for producing 3,3-dichloro-1,1,1-triflouroacetone
    8.
    发明授权
    Method for producing 3,3-dichloro-1,1,1-triflouroacetone 失效
    3,3-二氯-1,1,1-三氟丙酮的制备方法

    公开(公告)号：US5905174A

    公开(公告)日：1999-05-18

    申请号：US60180

    申请日：1998-04-15

    申请人： Masatomi Kanai ,  Takashi Sakaya ,  Mineo Watanabe ,  Yoshihiko Goto ,  Ryo Nadano

    发明人： Masatomi Kanai ,  Takashi Sakaya ,  Mineo Watanabe ,  Yoshihiko Goto ,  Ryo Nadano

    IPC分类号： B01J27/08 ,  B01J27/125 ,  C07C45/63 ,  C07C45/82 ,  C07C45/83 ,  C07C45/00

    CPC分类号： C07C45/82 ,  B01J27/08 ,  B01J27/125 ,  C07C45/63 ,  C07C45/83

    摘要： The invention relates to a method for producing 3,3-dichloro-1,1,1-trifluoroacetone. This method includes a step of fluorinating pentachloroacetone by hydrogen fluoride in the presence of a fluorination catalyst. This fluorination may be conducted in a liquid phase in the presence of an antimony compound as the fluorination catalyst. Alternatively, the fluorination may be conducted in a gas phase in the presence of a fluorination catalyst which may be a fluorinated alumina or at least one compound of at least one metal selected from Al, Cr, Mn, Ni, and Co. The method is suited to an industrial scale production of 3,3-dichloro-1,1,1-trifluoroacetone. The invention further relates to another method for producing 3,3-dichloro-1,1,1-trifluoroacetone. This method includes a step of purifying a crude 3,3-dichloro-1,1,1-trifluoroacetone by a distillation in the presence of water, thereby to produce 3,3-dichloro-1,1,1-trifluoroacetone which is substantially free of organic matters other than 3,3-dichloro-1,1,1-trifluoroacetone. This crude 3,3-dichloro-1,1,1-trifluoroacetone may be the reaction products of the fluorination of pentachloroacetone in a gas phase. Due to the provision of the another method, 3,3-dichloro-1,1,1-trifluoroacetone can be produced with high yield.

    摘要翻译： 本发明涉及一种生产3,3-二氯-1,1,1-三氟丙酮的方法。 该方法包括在氟化催化剂存在下用氟化氢氟化五氯丙酮的步骤。 该氟化可以在作为氟化催化剂的锑化合物的存在下在液相中进行。 或者，氟化可以在可以是氟化氧化铝或至少一种选自Al，Cr，Mn，Ni和Co的至少一种金属的化合物的氟化催化剂的存在下在气相中进行。该方法是 适合工业规模生产3,3-二氯-1,1,1-三氟丙酮。 本发明还涉及制备3,3-二氯-1,1,1-三氟丙酮的另一种方法。 该方法包括在水存在下通过蒸馏纯化粗制3,3-二氯-1,1,1-三氟丙酮的步骤，从而产生3,3-二氯-1,1,1-三氟丙酮，其基本上 不含3,3-二氯-1,1,1-三氟丙酮以外的有机物。 该粗的3,3-二氯-1,1,1-三氟丙酮可以是五氯丙酮在气相中氟化的反应产物。 由于提供另一种方法，可以高产率制备3,3-二氯-1,1,1-三氟丙酮。

    Thin-film multilayered electrode and method of fabricating same
    9.
    发明授权
    Thin-film multilayered electrode and method of fabricating same 失效
    薄膜多层电极及其制造方法

    公开(公告)号：US5770988A

    公开(公告)日：1998-06-23

    申请号：US701384

    申请日：1996-08-22

    申请人： Yoshihiko Goto ,  Masato Kobayashi ,  Yukio Yoshino ,  Yuzo Katayama

    发明人： Yoshihiko Goto ,  Masato Kobayashi ,  Yukio Yoshino ,  Yuzo Katayama

    IPC分类号： C23C14/06 ,  C23C14/08 ,  C23C14/34 ,  H01P1/203 ,  H01P3/08 ,  H01P3/18 ,  H01P7/08 ,  H01P11/00 ,  H05K1/02

    CPC分类号： H01P7/082 ,  H01P1/203 ,  H01P3/081 ,  H01P3/18 ,  H05K1/0237

    摘要： A thin-film multilayered electrode of a high frequency electromagnetic field coupled type is disclosed. The thin-film multilayered electrode comprises thin-film conductors and dielectric thin films alternately stacked on a dielectric substrate so that a plurality of TEM mode transmission lines are multilayered. A film thickness of each of the dielectric thin films is set so that phase velocities of TEM waves which propagate through at least two of the plurality of TEM mode transmission lines are made substantially equal to each other, and a film thickness of each of the thin-film conductors is set so as to be smaller than a skin depth of a frequency which is used so that electromagnetic fields of at least two of the plurality of TEM mode transmission lines are coupled with each other. The thin-film conductors include at least one adhesive layer having a large adhesion strength at one or more of interfaces between the dielectric substrate and the thin-film conductor and the interfaces between the thin film conductors and the dielectric thin films.

    摘要翻译： 公开了一种高频电磁场耦合型薄膜多层电极。 薄膜多层电极包括交替层叠在电介质基板上的薄膜导体和电介质薄膜，使得多个TEM模式传输线是多层的。 设置每个电介质薄膜的膜厚，使得传播通过多个TEM模式传输线中的至少两个的TEM波的相速度基本上彼此相等，并且每个薄膜的膜厚度 薄膜导体被设置为小于使用多个TEM模式传输线中的至少两个的电磁场彼此耦合的频率的趋肤深度。 薄膜导体包括在电介质基板和薄膜导体之间的一个或多个界面处以及薄膜导体与电介质薄膜之间的界面处具有较大粘合强度的至少一个粘结层。

    Preparation of trifluoromethyltoluene from halomethylbenzotrifluoride
    10.
    发明授权
    Preparation of trifluoromethyltoluene from halomethylbenzotrifluoride 失效
    由卤代甲基三氟甲苯制备三氟甲基甲苯

    公开(公告)号：US4849557A

    公开(公告)日：1989-07-18

    申请号：US193061

    申请日：1988-05-12

    申请人： Takeshi Kondo ,  Junji Negishi ,  Yoshihiko Goto ,  Matsue Minezaki ,  Toshikazu Kawai

    发明人： Takeshi Kondo ,  Junji Negishi ,  Yoshihiko Goto ,  Matsue Minezaki ,  Toshikazu Kawai

    IPC分类号： C07C17/23 ,  C07C17/38 ,  C07C22/08

    CPC分类号： C07C22/08 ,  C07C17/23 ,  C07C17/38

    摘要： Trifluoromethyltoluene is obtained from a halomethylbenzotrifluoride, which is a relatively inexpensive material, by hydrogenating the halomethyl group of the starting compound to methyl group with hydrogen gas in the presence of a hydrogenation catalyst and an acid acceptor. Suitable examples of the halomethyl group to be hydrogenated are --CH.sub.2 Cl, --CH.sub.2 F, --CHClF, --CClF.sub.2 and --CF.sub.3. When the starting compound is bis(trifluromethyl)benzene, addition of either an alcohol or an alkali metal fluoride to the reaction system is effective for suppression of formation of xylene as a by-product, and xylene still contained in the reaction product can completely be removed by treatment with a sulfonating agent such as fuming sulfuric acid.

    摘要翻译： 通过在氢化催化剂和酸受体的存在下，用氢气将起始化合物的卤代甲基氢化成甲基，由相对便宜的卤代甲基三氟甲苯得到三氟甲基甲苯。 待氢化的卤代甲基的合适实例是-CH 2 Cl，-CH 2 F，-CHClF，-CClF 2和-CF 3。 当起始化合物为双（三氟甲基）苯时，向反应体系中加入醇或碱金属氟化物对于抑制作为副产物形成二甲苯是有效的，反应产物中仍含有的二甲苯可以完全 通过用磺化剂如发烟硫酸处理除去。