公开(公告)号：US07378916B2

公开(公告)日：2008-05-27

申请号：US11057453

申请日：2005-02-14

申请人： Takeo Oita ,  Minoru Fukuda ,  Takaaki Ishikawa ,  Akihiro Nakamura ,  Kozo Ono ,  Fumio Asamura

发明人： Takeo Oita ,  Minoru Fukuda ,  Takaaki Ishikawa ,  Akihiro Nakamura ,  Kozo Ono ,  Fumio Asamura

IPC分类号： H03B5/32

CPC分类号： H03B5/04 ,  H03B5/366

摘要： The crystal oscillator device for simultaneously generating oscillator signals with a plurality of oscillation modes of a crystal unit, comprising: a primary resonator unit filtering the oscillator signal with a primary oscillation mode, which is one of the oscillation modes, from the output of the crystal unit, a secondary resonator unit filtering the oscillation signal, bearing a different resonance frequency from that of the primary resonator unit, with the primary oscillation mode from the output of the crystal unit, a primary phase synthesis unit, synthesizing the phases of the output signal of the primary resonator unit and the output signal of the secondary resonator unit, a tertiary resonator unit, a quaternary resonator unit, and a secondary phase synthesis unit.

摘要翻译： 一种用于同时产生具有晶体单元的多个振荡模式的振荡器信号的晶体振荡器装置，包括：从所述晶体的输出以主振荡模式（其为振荡模式之一）对所述振荡器信号进行滤波的主谐振器单元 单元，次级谐振器单元滤波振荡信号，与主谐振器单元的谐振频率不同，具有来自晶体单元的输出的主振荡模式，主相合成单元，合成输出信号的相位 的主谐振器单元和次谐波单元的输出信号，三次谐振器单元，四元谐振器单元和次级相位合成单元。

公开(公告)号：US20050184819A1

公开(公告)日：2005-08-25

申请号：US11057453

申请日：2005-02-14

申请人： Takeo Oita ,  Minoru Fukuda ,  Takaaki Ishikawa ,  Akihiro Nakamura ,  Kozo Ono ,  Fumio Asamura

发明人： Takeo Oita ,  Minoru Fukuda ,  Takaaki Ishikawa ,  Akihiro Nakamura ,  Kozo Ono ,  Fumio Asamura

IPC分类号： H05B3/12 ,  H03B5/04 ,  H03B5/32 ,  H03B5/36 ,  H03B5/30

CPC分类号： H03B5/04 ,  H03B5/366

摘要： The crystal oscillator device for simultaneously generating oscillator signals with a plurality of oscillation modes of a crystal unit, comprising: a primary resonator unit filtering the oscillator signal with a primary oscillation mode, which is one of the oscillation modes, from the output of the crystal unit, a secondary resonator unit filtering the oscillation signal, bearing a different resonance frequency from that of the primary resonator unit, with the primary oscillation mode from the output of the crystal unit, a primary phase synthesis unit, synthesizing the phases of the output signal of the primary resonator unit and the output signal of the secondary resonator unit, a tertiary resonator unit, a quaternary resonator unit, and a secondary phase synthesis unit.

摘要翻译： 一种用于同时产生具有晶体单元的多个振荡模式的振荡器信号的晶体振荡器装置，包括：从所述晶体的输出以主振荡模式（其为振荡模式之一）对所述振荡器信号进行滤波的主谐振器单元 单元，次级谐振器单元滤波振荡信号，与主谐振器单元的谐振频率不同，具有来自晶体单元的输出的主振荡模式，主相合成单元，合成输出信号的相位 的主谐振器单元和次谐波单元的输出信号，三次谐振器单元，四元谐振器单元和次级相位合成单元。

公开(公告)号：US20070241828A1

公开(公告)日：2007-10-18

申请号：US11726167

申请日：2007-03-21

申请人： Akihiro Nakamura ,  Minoru Fukuda

发明人： Akihiro Nakamura ,  Minoru Fukuda

IPC分类号： H03B5/32

CPC分类号： H03B5/368 ,  H03B2200/0008 ,  H03B2200/007

摘要： Provided is a dual mode quartz oscillator capable of suppressing a B mode interference securely and also accomplishing a stable third and fifth overtone oscillations. A dual mode quartz oscillation circuit, including a first oscillation unit for oscillating a third order overtone oscillation against a fundamental wave oscillation of a quartz oscillator; a second oscillation unit for oscillating a fifth order overtone oscillation against a fundamental wave oscillation of the quartz oscillator; and a band restriction unit for inhibiting an interference of the fifth overtone oscillation between the quartz oscillator and either one of the first or second oscillation unit.

摘要翻译： 提供了一种双模式石英振荡器，其能够安全地抑制B模式干扰，并且还实现稳定的第三和第五泛音振荡。 一种双模石英振荡电路，包括用于振荡与石英振荡器的基波振荡相关的第三阶泛音振荡的第一振荡单元; 第二振荡单元，用于相对于所述石英振荡器的基波振荡振荡第五级泛音振荡; 以及频带限制单元，用于抑制石英振荡器与第一或第二振荡单元中的任一个之间的第五泛音振荡的干扰。

公开(公告)号：US09595377B2

公开(公告)日：2017-03-14

申请号：US13602812

申请日：2012-09-04

申请人： Akihiro Nakamura ,  Atsushi Yamamoto ,  Yuko Nomiya

发明人： Akihiro Nakamura ,  Atsushi Yamamoto ,  Yuko Nomiya

IPC分类号： H01F5/00 ,  B32B37/14 ,  H01F17/00 ,  H01F1/34 ,  H01F17/04 ,  C04B35/26

CPC分类号： H01F41/041 ,  B32B15/20 ,  B32B18/00 ,  B32B37/06 ,  B32B2457/00 ,  C04B35/265 ,  C04B2235/3262 ,  C04B2235/3265 ,  C04B2235/3279 ,  C04B2235/3281 ,  C04B2235/3284 ,  C04B2235/6025 ,  C04B2235/652 ,  C04B2235/6582 ,  C04B2235/6583 ,  C04B2235/6584 ,  C04B2237/68 ,  H01F1/344 ,  H01F17/0013 ,  H01F17/04 ,  H01F27/2804 ,  H01F27/323 ,  H01F41/122 ,  H01F2027/2809

摘要： A ceramic electronic component includes a ferrite material magnetic body part and a Cu conductive part, the ferrite containing 20 to 48% trivalent Fe in terms of Fe2O3 and divalent Ni. The ferrite can contain Mn so that it is less than 50% of the total of Fe and Mn in terms of Mn2O3 and Fe2O3. The magnetic and conductive parts are co-fired at a pressure not exceeding the equilibrium oxygen partial pressure of Cu—Cu2O thereby ensuring insulating performance and favorable electrical characteristics.

摘要翻译： 陶瓷电子部件包括铁氧体材料磁性体部分和Cu导电部分，铁素体以Fe 2 O 3和二价Ni计为20〜48％的三价Fe。 铁素体可以含有Mn，以Mn2O3和Fe2O3计少于Fe和Mn的总和的50％。 在不超过Cu-Cu 2 O的平衡氧分压的压力下共同烧制磁性和导电部件，从而确保绝缘性能和良好的电特性。

公开(公告)号：US20140261880A1

公开(公告)日：2014-09-18

申请号：US14351993

申请日：2012-09-07

申请人： Akihiro Nakamura ,  Tetsuya Miyagi

发明人： Akihiro Nakamura ,  Tetsuya Miyagi

IPC分类号： B65B3/00

CPC分类号： B65B3/003 ,  B65B2210/08 ,  G07F13/00 ,  G07F17/0092

摘要： Provided is a liquid medication dispensing machine that can remove a liquid medication from one end of a supply pipe with higher reliability. The liquid medication dispensing machine includes a plurality of supply nozzles located at equal intervals through which liquid medications flow from a plurality of liquid medication bottles containing the liquid medications, respectively, to a prescription bottle. The plurality of supply nozzles are moved sequentially to a supply position where a supply nozzle faces an upper opening of the prescription bottle. The liquid medication dispensing machine further includes a cleaning unit that removes the liquid medication adhering to the supply nozzle. The supply nozzles are moved sequentially to a cleaning position where the cleaning unit removes the liquid medication from the supply nozzle. The cleaning position is provided at a position away from the supply position by a distance smaller than a spacing between the supply nozzles.

摘要翻译： 提供了一种液体药物分配机，其可以以更高的可靠性从供给管的一端去除液体药物。 液体药物分配机包括多个供应喷嘴，其间隔相等，液体药物分别从容纳液体药物的多个液体药物瓶流出到处方瓶中。 多个供给喷嘴顺序地移动到供给喷嘴面向处方瓶的上部开口的供给位置。 液体药物分配机还包括清除单元，该清洁单元除去附着在供应喷嘴上的液体药物。 供应喷嘴依次移动到清洁单元，其中清洁单元从供应喷嘴去除液体药物。 清洁位置设置在远离供给位置的距离小于供给喷嘴之间的距离的位置处。

公开(公告)号：US20140134310A1

公开(公告)日：2014-05-15

申请号：US14128120

申请日：2012-06-21

申请人： Akihiro Nakamura ,  Junko Tobe ,  Norifumi Adachi

发明人： Akihiro Nakamura ,  Junko Tobe ,  Norifumi Adachi

IPC分类号： A23L2/66

CPC分类号： A23L2/66 ,  A23C9/137 ,  A23C11/106 ,  A23L2/52 ,  A23L2/68 ,  A23L29/238 ,  C08B37/0003 ,  C08B37/0045

摘要： The present invention provides a pectic polysaccharide, wherein a degree of methyl esterification of constituent galacturonic acid is 45% or less, a structure of a single molecule observed with an atomic force microscope comprises a star structure, and a diameter of the molecule is more than 100 nm and equal to or less than 200 nm.

摘要翻译： 本发明提供一种果胶多糖，其中成分半乳糖醛酸的甲基酯化度为45％以下，用原子力显微镜观察到的单一分子的结构包含星形结构，分子的直径大于 100nm，等于或小于200nm。

公开(公告)号：US08629385B2

公开(公告)日：2014-01-14

申请号：US12705161

申请日：2010-02-12

申请人： Kaneyoshi Takeshita ,  Takashi Kubodera ,  Akihiro Nakamura

发明人： Kaneyoshi Takeshita ,  Takashi Kubodera ,  Akihiro Nakamura

IPC分类号： H01L27/00

CPC分类号： H01L27/14647 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14641

摘要： Disclosed herein is a solid-state imaging element including: (A) a light reception/charge storage region formed in a semiconductor layer, the light reception/charge storage region including M light reception/charge storage layers stacked one on top of the other, where M≧2; (B) a charge output region formed in the semiconductor layer; (C) a conduction/non-conduction control region which includes a portion of the semiconductor layer located between the light reception/charge storage region and the charge output region; and (D) a conduction/non-conduction control electrode adapted to control the conduction or non-conduction state of the conduction/non-conduction control region, wherein mth potential control electrodes are provided between the mth and (m+1)th light reception/charge storage layers, where 1≦m≦(M−1), to control the potentials of the light reception/charge storage layers.

摘要翻译： 本发明公开了一种固态成像元件，包括：（A）形成在半导体层中的光接收/电荷存储区域，所述光接收/电荷存储区域包括一个层叠在一起的M个光接收/电荷存储层， 其中M> = 2; （B）形成在半导体层中的电荷输出区域; （C）导电/非导通控制区域，其包括位于光接收/电荷存储区域和电荷输出区域之间的半导体层的一部分; 和（D）适于控制导通/非导通控制区域的导通或非导通状态的导通/非导通控制电极，其中第m电位控制电极设置在第m和第（m + 1）个光 接收/电荷存储层，其中1 @ m @（M-1），以控制光接收/电荷存储层的电位。

公开(公告)号：US08466990B2

公开(公告)日：2013-06-18

申请号：US12805520

申请日：2010-08-04

申请人： Kazuki Nomoto ,  Akihiro Nakamura ,  Takashi Kubodera ,  Kaneyoshi Takeshita ,  Yukihiro Kiyota

发明人： Kazuki Nomoto ,  Akihiro Nakamura ,  Takashi Kubodera ,  Kaneyoshi Takeshita ,  Yukihiro Kiyota

IPC分类号： H04N5/217 ,  H04N5/228 ,  H04N9/64 ,  H04N3/14 ,  H04N5/335

CPC分类号： H04N5/3675

摘要： An imaging apparatus includes: an imaging unit configured to image an image using an imaging device; an image obtaining unit configured to obtain a plurality of images equivalent to the time of dark, imaged by the imaging unit; a registering unit configured to register, with an image obtained by the image obtaining unit, the address and change amount of a pixel where the output value of the pixel changes so as to exceed a predetermined threshold; and a correcting unit configured to correct, when taking a pixel corresponding to an address registered by the registering unit as a processing object pixel, the pixel value of the processing object pixel based on comparison between difference of the output values of the processing object pixel and a peripheral pixel of the processing object pixel, and the change amount of the processing object pixel.

摘要翻译： 一种成像装置，包括：成像单元，被配置为使用成像装置对图像进行成像; 图像获取单元，被配置为获得由所述成像单元成像的等于黑暗时间的多个图像; 注册单元，被配置为用图像获取单元获得的图像登记像素的输出值改变以超过预定阈值的像素的地址和变化量; 以及校正单元，被配置为基于通过所述处理对象像素的输出值的差异与所述处理对象像素的输出值的差异来对所述处理对象像素的像素值进行比较，当对应于由所述登记单元登记的地址的像素作为处理对象像素时， 处理对象像素的周边像素和处理对象像素的变化量。

公开(公告)号：US08362412B2

公开(公告)日：2013-01-29

申请号：US12646512

申请日：2009-12-23

申请人： Takashi Kubodera ,  Akihiro Nakamura ,  Kaneyoshi Takeshita

发明人： Takashi Kubodera ,  Akihiro Nakamura ,  Kaneyoshi Takeshita

IPC分类号： H01L27/00 ,  H01L27/146

CPC分类号： H01L27/14647 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14689

摘要： A solid-state image pickup element includes: (A) a light receiving/charge accumulating region formed in a semiconductor layer and formed by laminating M (where M≧2) light receiving/charge accumulating layers; (B) a charge outputting region formed in the semiconductor layer; (C) a depletion layer forming region formed of a part of the semiconductor layer, the part of the semiconductor layer being situated between the light receiving/charge accumulating region and the charge outputting region; and (D) a control electrode region for controlling a state of formation of a depletion layer in the depletion layer forming region, wherein the solid-state image pickup element further includes a light receiving/charge accumulating layer extending section extending from each light receiving/charge accumulating layer to the depletion layer forming region.

摘要翻译： 固体摄像元件包括：（A）形成在半导体层中并通过层叠M（其中M≥2）光接收/电荷累积层形成的光接收/电荷累积区; （B）形成在半导体层中的电荷输出区域; （C）由半导体层的一部分形成的耗尽层形成区域，半导体层的一部分位于光接收/电荷累积区域和电荷输出区域之间; 以及（D）用于控制耗尽层形成区域中的耗尽层的形成状态的控制电极区域，其中所述固态摄像元件还包括从每个光接收/ 电荷累积层到耗尽层形成区域。

公开(公告)号：US08067313B2

公开(公告)日：2011-11-29

申请号：US12657799

申请日：2010-01-28

申请人： Akihiro Nakamura

发明人： Akihiro Nakamura

IPC分类号： H01L21/302 ,  H01L21/461 ,  H01L23/48 ,  H01L23/52 ,  H01L23/40

CPC分类号： H01L27/14689 ,  H01L27/14609 ,  H01L27/14612 ,  H01L29/78

摘要： Disclosed is a method of manufacturing a semiconductor device including forming a transistor on a first surface of a device substrate, forming a hole in a second surface opposite to the first surface of the device substrate, and supplying hydrogen to a gate insulating film of the transistor from the second surface of the device substrate through the hole.

摘要翻译： 公开了一种制造半导体器件的方法，包括在器件衬底的第一表面上形成晶体管，在与器件衬底的第一表面相对的第二表面中形成孔，并向晶体管的栅极绝缘膜提供氢 从设备基板的第二表面通过孔。