公开(公告)号：US4856472A

公开(公告)日：1989-08-15

申请号：US199160

申请日：1988-05-26

申请人： Akinori Wakasa ,  Minoru Machida ,  Yasuhiro Miyakawa ,  Seiichi Asami

发明人： Akinori Wakasa ,  Minoru Machida ,  Yasuhiro Miyakawa ,  Seiichi Asami

IPC分类号： F02B19/16

CPC分类号： F02B19/165 ,  Y02T10/125

摘要： A cylinder head has a ceramic precombustion chamber for an internal combustion engine. The cylinder head includes a part of the cylinder head made of a ceramic body having an injection aperture communicating with a main combustion chamber for jetting burning gases therethrough, a metal sleeve fitted on an outer circumference of the ceramic body and fitted in a precombustion chamber insert bore forming part of the cylinder head, and a head gasket interposed between the cylinder block forming the main combustion chamber and the ceramic body, the metal sleeve and the cylinder head. A surface of the ceramic body facing to the head gasket extends onto a side of the main combustion chamber beyond a surface of the ceramic body opening the injection aperture into the main combustion chamber.

摘要翻译： 气缸盖具有用于内燃机的陶瓷预燃室。 气缸盖包括由具有与用于喷射燃烧气体的主燃烧室连通的喷射孔的陶瓷体的一部分，金属套筒安装在陶瓷体的外周上并且装配在预燃室插入件 形成气缸盖的一部分的孔，以及插入形成主燃烧室的气缸体与陶瓷体，金属套筒和气缸盖之间的头垫片。 面向头垫片的陶瓷体的表面延伸到主燃烧室的超过陶瓷体的表面，该表面将喷射孔打开进入主燃烧室。

公开(公告)号：US4875939A

公开(公告)日：1989-10-24

申请号：US241899

申请日：1988-09-08

申请人： Yasuhiro Miyakawa ,  Minoru Machida

发明人： Yasuhiro Miyakawa ,  Minoru Machida

IPC分类号： F02B19/00 ,  F02B19/16

CPC分类号： F02B19/165 ,  F02B2019/006 ,  Y02T10/125

摘要： A ceramic precombustion chamber construction for an internal combustion engine including a precombustion chamber formed by a ceramic body to be inserted in a precombustion chamber receiving cavity of a metal cylinder head. Projections are formed on an outer circumferential surface of a metal sleeve fitted on the ceramic body, or on an inner circumferential surface of the precombustion chamber receiving cavity of a metal cylinder head, or on an outer circumferential surface of the ceramic body. Thermal insulating spaces are formed by the projections and the inner circumferential surface of the precombustion chamber receiving cavity or the outer circumferential surface of the metal sleeve or the outer circumferential surface of the ceramic body. One of the projections is formed with a glow-plug receiving aperture which communicates with a glow-plug receiving aperture formed in the precombustion chamber receiving cavity of the metal cylinder head. As a result, leakage of burnt gases is prevented to ensure a complete thermal insulating effect.

摘要翻译： 一种用于内燃机的陶瓷预燃室结构，包括由陶瓷体形成的预燃室，以插入到金属气缸盖的预燃室容纳空腔中。 凸出部形成在安装在陶瓷体上的金属套筒的外周面，或金属制气缸头的预燃室容纳腔的内周面上，或陶瓷体的外周面上。 绝热空间由预燃室容纳腔的突出部和内周面，金属套筒的外周面或陶瓷体的外周面形成。 突起之一形成有电热塞接收孔，其与形成在金属气缸盖的预燃室容纳腔中的电热塞接收孔连通。 结果，防止燃烧气体的泄漏，以确保完全的隔热效果。

公开(公告)号：US4844037A

公开(公告)日：1989-07-04

申请号：US245724

申请日：1988-09-19

申请人： Yasuhiro Miyakawa ,  Minoru Machida

发明人： Yasuhiro Miyakawa ,  Minoru Machida

IPC分类号： F02B19/16

CPC分类号： F02B19/165 ,  Y02T10/125

摘要： A precombustion chamber construction for an internal combustion engine comprises a precombustion chamber constructed by a ceramic body having a glow-plug receiving aperture to be inserted in a precombustion chamber receiving cavity of a metal cylinder head. A metal sleeve may be fitted on the ceramic body. A seat is formed at an entrance of a glow-plug receiving aperture on an outer circumferential surface of the metal sleeve, thereby preventing any leakage of burnt gases to ensure the complete thermal insulating effect. The metal sleeve is not necessarily needed. In this case, the seat is formed at an entrance of the glow-plug receiving aperture on an outer circumferential surface of the ceramic body.

摘要翻译： 用于内燃机的预燃室构造包括由具有电热塞接收孔的陶瓷体构成的预燃室，以插入金属气缸盖的预燃室容纳空腔中。 金属套筒可以安装在陶瓷体上。 在金属套筒的外周面上的电热塞接收孔的入口处形成座，从而防止燃烧气体的任何泄漏，以确保完全的隔热效果。 不一定需要金属套筒。 在这种情况下，座椅形成在陶瓷体的外周面上的电热塞接收孔的入口处。

公开(公告)号：US06235619B1

公开(公告)日：2001-05-22

申请号：US09336749

申请日：1999-06-21

申请人： Yasuhiro Miyakawa

发明人： Yasuhiro Miyakawa

IPC分类号： H01L213205

CPC分类号： H01L21/76831 ,  H01L21/76816 ,  H01L21/76897

摘要： A semiconductor device manufacturing method capable of coping with scale reduction of the semiconductor device and forming contact holes without deteriorating the device separation characteristics is provided. This method has the following steps. First, in the laminating process, at least a first layer, a second layer, and a third layer are formed in sequence. The second layer and the third layer are laminated over the first layer in sequence so as to cover a plurality of gate electrodes formed on the first layer. Second, in the first etching process, an opening unit is formed between the gate electrodes, and the third layer is etched using the second layer as an etching stopper. Third, in the depositing process, an insulating material film is deposited on the side wall of the opening unit and the bottom portion of the opening unit to a thickness with which the insulating material film functions as a spacer for the insulation. Fourth, in the second etching process, a contact hole is formed by anisotropically etching the insulating material film deposited at the bottom portion of the opening unit and the second layer beneath the insulating material film to expose the first layer.

摘要翻译： 本发明提供能够应对半导体装置的规模缩小并形成接触孔而不劣化器件分离特性的半导体器件制造方法。 该方法具有以下步骤。 首先，在层压工序中，依次形成至少第一层，第二层和第三层。 第二层和第三层依次层叠在第一层上，以覆盖形成在第一层上的多个栅电极。 第二，在第一蚀刻工艺中，在栅电极之间形成开口单元，并且使用第二层作为蚀刻停止层蚀刻第三层。 第三，在沉积过程中，绝缘材料膜沉积在开口单元的侧壁和开口单元的底部上，其厚度与绝缘材料膜用作隔离物的间隔件。 第四，在第二蚀刻工艺中，通过各向异性蚀刻沉积在开口单元的底部的绝缘材料膜和绝缘材料膜下面的第二层来形成接触孔，以露出第一层。

公开(公告)号：US06735753B2

公开(公告)日：2004-05-11

申请号：US10263764

申请日：2002-10-04

申请人： Yasuhiro Miyakawa

发明人： Yasuhiro Miyakawa

IPC分类号： G06F1750

CPC分类号： G06F17/5068 ,  G06F17/5077

摘要： In a method of fabricating a semiconductor device, first metal interconnection patterns, first via patterns and second metal interconnection patterns are positioned in such a way that each of antenna ratios of the first metal patterns, the first via patterns and the second metal patterns becomes equal to or smaller than an allowable antenna ratio. Next, a width of each of the first metal patterns is broadened by a minimum line width of the first metal patterns. The broadened first metal patterns are connected at a first area where a distance between the broadened first metal patterns is smaller than a minimum size of the first via patterns. Then, a second area is extracted where the first metal patterns and the second metal patterns do not exist. Additional first via patterns are placed in the second area. Each of the additional first via patterns has a minimum size with a minimum pitch in the second area. Finally, the additional first via pattern which do not meet a minimum allowable distance between the first metal patterns and the first via patterns is deleted.

摘要翻译： 在制造半导体器件的方法中，第一金属互连图案，第一通孔图案和第二金属互连图案被定位成使得第一金属图案，第一通孔图案和第二金属图案中的每个天线比例变得相等 达到或小于允许天线比率。 接下来，通过第一金属图案的最小线宽，使每个第一金属图案的宽度变宽。 加宽的第一金属图案在第一区域连接，第一区域与第一通孔图案的最小尺寸之间变宽的第一金属图案之间的距离小。 然后，提取不存在第一金属图案和第二金属图案的第二区域。 附加的第一通孔图案被放置在第二区域中。 每个附加的第一通孔图案具有在第二区域中具有最小间距的最小尺寸。 最后，删除不满足第一金属图案和第一通孔图案之间的最小允许距离的附加第一通孔图案。

公开(公告)号：US6162677A

公开(公告)日：2000-12-19

申请号：US151355

申请日：1998-09-10

申请人： Yasuhiro Miyakawa ,  Tsukasa Yajima ,  Shunji Takase

发明人： Yasuhiro Miyakawa ,  Tsukasa Yajima ,  Shunji Takase

IPC分类号： H01L21/28 ,  H01L21/768 ,  H01L21/8238 ,  H01L21/8242 ,  H01L27/108

CPC分类号： H01L27/10894 ,  H01L21/823871 ,  H01L27/10873 ,  H01L27/10888

摘要： In a semiconductor device fabricating method for fabricating a semiconductor device having a high-density region in which transistors are arranged with a relatively high density, and a low-density region in which transistors are arranged in with a relatively low density, a silicon nitride film of a thickness great enough for the silicon nitride film to serve as a stopper is deposited over the entire surface of the silicon wafer, so that regions between the transfer gates in the high-density region may not be blocked up after removing side walls formed in the entire transistor region. A part of the silicon nitride film in the low-density region, namely, a peripheral circuit region, is removed.

摘要翻译： 在制造具有高密度区域的半导体器件的半导体器件制造方法中，其中晶体管以相对较高的密度排列，并且以较低密度排列晶体管的低密度区域，氮化硅膜 在硅晶片的整个表面上沉积足够大的氮化硅膜用作止动器的厚度，使得高密度区域中的转移栅极之间的区域可以在除去形成在其中的侧壁之后被阻挡 整个晶体管区域。 去除了低密度区域中的一部分氮化硅膜，即外围电路区域。

公开(公告)号：US06342449B2

公开(公告)日：2002-01-29

申请号：US09312852

申请日：1999-05-17

申请人： Yasuhiro Miyakawa

发明人： Yasuhiro Miyakawa

IPC分类号： H01L21302

CPC分类号： H01L21/76897 ,  H01L21/31116 ,  H01L21/76825 ,  H01L21/76834

摘要： A technique for etching a silicon oxide film using a silicon nitride film as a stopper is provided so that a contact hole is opened in a self-aligned manner, etc., which corresponds to a semiconductor with a microstructure and a high aspect ratio. In a method of manufacturing a semiconductor device including an etching process for etching a silicon oxide film using a silicon nitride film as a stopper, atoms of one or more kinds selected from a group consisting of carbon and atoms whose reactivity to fluorine and oxygen is equivalent to that of carbon are implanted into said silicon nitride film by an ion implantation method before said etching process, so that selectivity of silicon oxide for silicon nitride in said etching process is increased.

摘要翻译： 提供了使用氮化硅膜作为阻挡层来蚀刻氧化硅膜的技术，使得接触孔以对准具有微结构和高纵横比的半导体的自对准方式等打开。 在制造半导体器件的方法中，该半导体器件包括使用氮化硅膜作为阻挡层蚀刻氧化硅膜的蚀刻工艺，选自碳与对氟和氧的反应性相当的原子的原子相等 在所述蚀刻工艺之前通过离子注入方法将碳的碳氧化物注入到所述氮化硅膜中，使得在所述蚀刻工艺中氧化硅对氮化硅的选择性增加。