公开(公告)号：US08501025B2

公开(公告)日：2013-08-06

申请号：US13045024

申请日：2011-03-10

申请人： Akio Hashizume ,  Yuya Akanishi ,  Kenji Kawaguchi ,  Manabu Yamamoto

发明人： Akio Hashizume ,  Yuya Akanishi ,  Kenji Kawaguchi ,  Manabu Yamamoto

IPC分类号： C03C15/00

CPC分类号： H01L21/67017 ,  B44C1/227 ,  H01L21/02063 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/67126 ,  H01L21/6719 ,  H01L21/76814

摘要： A substrate treatment apparatus is provided, which includes: a seal chamber including a chamber body having an opening, a lid member provided rotatably with respect to the chamber body and configured to close the opening, and a first liquid seal structure which liquid-seals between the lid member and the chamber body, the seal chamber having an internal space sealed from outside; a lid member rotating unit which rotates the lid member; a substrate holding/rotating unit which holds and rotates a substrate in the internal space of the seal chamber; and a treatment liquid supplying unit which supplies a treatment liquid to the substrate rotated by the substrate holding/rotating unit.

摘要翻译： 提供了一种基板处理装置，其包括：密封室，包括具有开口的室主体，相对于所述室主体可旋转地设置并构造成关闭所述开口的盖构件，以及第一液体密封结构， 所述盖构件和所述室主体，所述密封室具有从外部密封的内部空间; 盖构件旋转单元，其旋转盖构件; 基板保持/旋转单元，其在所述密封室的内部空间中保持并旋转基板; 以及处理液供给部，其向由所述基板保持旋转部旋转的基板供给处理液。

公开(公告)号：US09293352B2

公开(公告)日：2016-03-22

申请号：US13590215

申请日：2012-08-21

申请人： Akio Hashizume ,  Yuya Akanishi

发明人： Akio Hashizume ,  Yuya Akanishi

IPC分类号： H01L21/311 ,  H01L21/67 ,  H01L21/02 ,  H01L21/306

CPC分类号： H01L21/67028 ,  H01L21/0206 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02658 ,  H01L21/306

摘要： In a substrate processing apparatus (1), a silicon oxide film on a main surface of a substrate (9) is removed in an oxide film removing part (4) and then a silylation material is applied to the main surface, to thereby perform a silylation process in a silylation part (6). It is thereby possible to lengthen the Q time from the removal of the silicon oxide film to the formation of the silicon germanium film and reduce the temperature for prebaking in the formation of the silicon germanium film.

摘要翻译： 在基板处理装置（1）中，在氧化膜除去部（4）中除去基板（9）的主表面上的氧化硅膜，然后将甲硅烷基化材料施加到主表面，从而进行 在甲硅烷基化部分（6）中的甲硅烷基化过程。 从而可以延长Q时间从去除氧化硅膜到形成硅锗膜，并降低在形成硅锗膜时预烘烤的温度。