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72 条记录 (耗时 0.037 秒)

    Hydrophilic diamond particles and method of producing the same
    1.
    发明授权
    Hydrophilic diamond particles and method of producing the same 失效
    亲水性金刚石颗粒及其制备方法

    公开(公告)号：US06337060B1

    公开(公告)日：2002-01-08

    申请号：US08662022

    申请日：1996-06-12

    申请人： Akio Hiraki ,  Toshimichi Ito ,  Akimitsu Hatta ,  Hiroshi Makita ,  Kazuhito Nishimura ,  Hiroshi Ishizuka ,  Satoru Hosomi

    发明人： Akio Hiraki ,  Toshimichi Ito ,  Akimitsu Hatta ,  Hiroshi Makita ,  Kazuhito Nishimura ,  Hiroshi Ishizuka ,  Satoru Hosomi

    IPC分类号： C01B3106

    CPC分类号： C01B32/28

    摘要： The principal objects of the invention is to provide diamond fine particles with a surface nature so improved as to form a stable, uniform suspension or dispersion in a common medium such as water and alcohol. Another object is to provide an effective technique for producing hydrophilic diamond fine particles by chemically modifying the particle surface nature, while removing at the same time contaminants and foreign materials which coexist with the diamond. In the invention, diamond particles are treated by boiling in the treatment fluid of sulfuric acid solution, which is in particular of concentrated or fuming nature, at a temperature more than 200° C., which is preferably 250° C. or more.

    摘要翻译： 本发明的主要目的是提供具有如此改进的表面性质的金刚石细颗粒，以在普通介质如水和醇中形成稳定的均匀悬浮液或分散体。 另一个目的是提供通过化学改性颗粒表面性质同时同时除去与金刚石共存的污染物和异物来生产亲水性金刚石细颗粒的有效技术。 在本发明中，金属颗粒在温度超过200℃，优选为250℃以上的温度下，在特别浓缩或发烟性质的硫酸溶液的处理液中沸腾处理。

    Method of producing diamond of controlled quality
    2.
    发明授权
    Method of producing diamond of controlled quality 失效
    生产控制质量钻石的方法

    公开(公告)号：US5510157A

    公开(公告)日：1996-04-23

    申请号：US789441

    申请日：1991-11-06

    申请人： Chia-Fu Chen ,  Kazuhito Nishimura ,  Ensei Ko ,  Hiroshi Ishizuka ,  Satoru Hosomi

    发明人： Chia-Fu Chen ,  Kazuhito Nishimura ,  Ensei Ko ,  Hiroshi Ishizuka ,  Satoru Hosomi

    IPC分类号： C01B31/06 ,  C23C16/27 ,  C23C16/52

    CPC分类号： C23C16/27 ,  C01B31/06 ,  C23C16/278 ,  C23C16/279 ,  C23C16/52

    摘要： Making a diamond substance exhibiting a cathodoluminescence spectrum with the peak at a photon energy greater than 2.8 eV (electron volt), the half-value and 20%-value width not exceeding 0.5 eV and 0.8 eV, respectively, comprising: providing a substrate in a closed chamber, introducing a matrix gas comprising H.sub.2 and one selected from hydrocarbon and CO to said chamber, exciting the gas to create a plasma while heating said substrate to a temperature of at least 700.degree. C. and, thus, causing deposition and growth of diamond substance which is crystallographically diamond, controlling parameters of the deposition by means of the cathodoluminescence record and recovering the diamond substance from the chamber.

    摘要翻译： 制备具有阴极发光光谱的金刚石物质，其光子能量大于2.8eV（电子伏特）的峰值，半值和20％值的宽度分别不超过0.5eV和0.8eV，包括：提供基底 封闭的室，将包含H 2和选自烃和CO的一种基质气体引入所述室，激发气体以产生等离子体，同时将所述衬底加热到​​至少700℃的温度，从而引起沉积和生长 通过阴极发光记录控制沉积参数，并从室中回收金刚石物质。

    Method of producing diamond of controlled quality and product produced thereby
    3.
    发明授权
    Method of producing diamond of controlled quality and product produced thereby 失效
    生产受控质量的金刚石的方法和由此生产的产品

    公开(公告)号：US5882740A

    公开(公告)日：1999-03-16

    申请号：US627320

    申请日：1996-04-01

    申请人： Chia-Fu Chen ,  Kazuhito Nishimura ,  Ensei Ko ,  Hiroshi Ishizuka ,  Satoru Hosomi

    发明人： Chia-Fu Chen ,  Kazuhito Nishimura ,  Ensei Ko ,  Hiroshi Ishizuka ,  Satoru Hosomi

    IPC分类号： C01B31/06 ,  C23C16/27 ,  C23C16/52

    CPC分类号： C23C16/27 ,  C01B31/06 ,  C23C16/278 ,  C23C16/279 ,  C23C16/52

    摘要： A method is provided for efficiently producing an entirely quality-controlled CVD diamond. A CVD process is interrupted at an early stage and the deposit is taken out of the reaction chamber, before a significant mass is accumulated, and is inspected by means of cathodoluminescence. The spectrum are compared with a given reference in terms of peak position, half width and 20%-value width in coordination. The observed deviation allows to determine whether to maintain or alter the settings.A diamond substance of acceptable quality which is properly specified in terms of the CL parameters is also provided.

    摘要翻译： 提供了一种有效地生产完全质量控制的CVD金刚石的方法。 CVD过程在早期中断，并且在积累显着质量之前将沉积物从反应室中取出，并通过阴极发光进行检查。 将频谱与峰值位置，半宽度和20％值宽度协调的给定参考值进行比较。 观察到的偏差允许确定是否维护或更改设置。 还提供了根据CL参数适当指定的可接受质量的钻石物质。

    Method for producing of polycrystalline silicon and apparatus thereof
    8.
    发明授权
    Method for producing of polycrystalline silicon and apparatus thereof 失效
    多晶硅的制造方法及其制造方法

    公开(公告)号：US4715317A

    公开(公告)日：1987-12-29

    申请号：US767079

    申请日：1985-10-15

    申请人： Hiroshi Ishizuka

    发明人： Hiroshi Ishizuka

    IPC分类号： C01B33/02 ,  C01B33/035 ,  C23C16/24

    CPC分类号： C01B33/035 ,  C23C16/24

    摘要： A method for production of polycrystalline silicon, comprising: heating a deposition substrate in a reaction vessel of metal, bringing a gaseous silicon hydride close to said substrate, decomposing said silicon hydride, and producing to deposit silicon on the substrate, while the wall of said vessel is regulated in temperature at levels of, approximately, 100.degree. to 450.degree. C. simultaneously with a decrease of 100.degree. to 700.degree. C. from the temperature of said substrate and an apparatus for production of polycrystalline silicon, comprising: a reaction vessel of metallic material closed with a detachable lid, an inlet and an outlet for gas connected to said vessel, a jacket arranged over the substantial part of said vessel to provide an interspace between the jacket and vessel, a closed circuit for a gas consisting partly of said interspace, a two-way temperature controlling means for heating and cooling the gas provided on the circuit, and a deposition substrate of electrical conductive material extending in the vessel axially from the lid.

    摘要翻译： 一种生产多晶硅的方法，包括：在金属的反应容器中加热沉积基板，使气态硅氢化物靠近所述衬底，分解所述硅氢化物，并在所述衬底上壁产生沉积硅， 容器的温度约为100〜450℃，同时从所述基板的温度和多晶硅的制造温度下降到100℃至700℃，所述装置包括：反应容器 用可拆卸的盖子封闭的金属材料，连接到所述容器的气体的入口和出口，设置在所述容器的大部分上方以提供夹套和容器之间的间隙的护套，用于气体的闭合回路，其部分由 所述间隙，用于加热和冷却设置在电路上的气体的双向温度控制装置和电导率沉积基板 e在容器中从盖子轴向延伸的材料。

    Electrolytic cell for a molten salt
    9.
    发明授权
    Electrolytic cell for a molten salt 失效
    熔盐电解池

    公开(公告)号：US4699704A

    公开(公告)日：1987-10-13

    申请号：US823405

    申请日：1986-01-28

    申请人： Hiroshi Ishizuka

    发明人： Hiroshi Ishizuka

    IPC分类号： C25C3/02 ,  C25C7/00

    CPC分类号： C25C7/005

    摘要： An electrolytic cell for a molten salt comprising alkali- or alkaline earth metal chloride, comprising: an assembly of anode and cathode in opposed relation with each other, a tightly closable vessel containing said assembly and capable of holding in molten state a salt comprising an alkali- or alkaline earth metal chloride, an insulative partition arranged around the anode and extending axially over a height range including the intended bath level, several projections formed to a length on an effective side of the anode opposed to the cathode, said projection having upper and lower surfaces declining outwards so an open bottom-closed top space is provided under each projection, a rise bore formed lengthwise within the anode to run along the axis and a lateral hole in communicating relation with an inward ascent between said space and rise bore.

    摘要翻译： 一种用于熔融盐的包括碱金属或碱土金属氯化物的电解池，包括：阳极和阴极彼此相对关系的组件，容纳所述组件并能够保持熔融状态的可紧密封闭的容器，所述盐包含碱 - 或碱土金属氯化物，绝缘隔板，其布置在阳极周围并且在包括预期浴槽水平的高度范围内轴向延伸，多个突起形成为与阴极相对的阳极的有效侧上的长度，所述突起具有上部和 下表面向外倾斜，因此在每个突起处设置开放的底部封闭的顶部空间，在阳极中纵向形成的上升孔沿着轴线延伸，以及与所述空间和上升孔之间的向内上升连通的侧向孔。

    Apparatus for molten salt electrolysis
    10.
    发明授权
    Apparatus for molten salt electrolysis 失效
    熔盐电解装置

    公开(公告)号：US4647355A

    公开(公告)日：1987-03-03

    申请号：US791558

    申请日：1985-10-25

    申请人： Hiroshi Ishizuka

    发明人： Hiroshi Ishizuka

    IPC分类号： C25C3/04 ,  C25C7/00 ,  C25C7/02 ,  C25C3/00

    CPC分类号： C25C7/005

    摘要： An apparatus for molten salt electrolysis, comprising: an electrolysis chamber which is capable of holding a molten salt of metallic chloride and is closed upwards with a top cover, a cathode placed in said chamber, a lead block of metallic material which runs through the top cover and comprises therealong a bottom-closed axial cavity with inlet and outlet for a fluid coolant connected thereto, said cathode and lead block connected to each other below the bath level to be employed of said salt, and said cavity reaching below said level.

    摘要翻译： 一种熔盐电解装置，包括：电解室，其能够保持金属氯化物的熔融盐，并且用顶盖封闭，向上放置在所述室中的阴极，穿过顶部的金属材料引线块 并且包括一个具有入口和出口的底部封闭的轴向空腔，用于连接到其上的流体冷却剂，所述阴极和铅块在所述盐水平面下方彼此连接以被用于所述盐，并且所述空腔达到所述水平以下。