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公开(公告)号：US20080303161A1
公开(公告)日：2008-12-11
申请号：US12042716
申请日：2008-03-05
Applicant: Kojiro Kobayashi , Akio Hirose , Masanori Yamagiwa
Inventor： Kojiro Kobayashi , Akio Hirose , Masanori Yamagiwa
IPC: H01L23/48
CPC classification number: H01L24/32 , H01L23/3735 , H01L23/3736 , H01L24/29 , H01L24/83 , H01L2224/04026 , H01L2224/2908 , H01L2224/29101 , H01L2224/29111 , H01L2224/29139 , H01L2224/29339 , H01L2224/29344 , H01L2224/29369 , H01L2224/32245 , H01L2224/8184 , H01L2224/83801 , H01L2224/8384 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/10253 , H01L2924/10272 , H01L2924/10329 , H01L2924/19043 , H01L2924/00 , H01L2924/01014 , H01L2924/00014 , H01L2924/3512
Abstract: A method of manufacturing a semiconductor device includes: preparing a semiconductor element having a first metal layer made of first metal on a surface thereof, and a metal substrate made of second metal, the metal substrate having a fourth metal layer made of fourth metal on a surface thereof, and mounting the semiconductor element on the surface thereof; providing metal nanopaste between the first metal layer and the fourth metal layer, the metal nanopaste being formed by dispersing fine particles made of third metal with a mean diameter of 100 nm or less into an organic solvent; and heating, or heating and pressurizing the semiconductor element and the metal substrate between which the metal nanopaste is provided, thereby removing the solvent. Further, each of the first, third and fourth metals is made of any metal of gold, silver, platinum, copper, nickel, chromium, iron, lead, and cobalt, an alloy containing at least one of the metals, or a mixture of the metals or the alloys. By the manufacturing method, it is possible to bond the semiconductor element to the metal substrate favorably.
Abstract translation: 一种制造半导体器件的方法包括：制备其表面上具有由第一金属制成的第一金属层的半导体元件和由第二金属制成的金属基板，所述金属基板具有由第四金属制成的第四金属层 表面，并将半导体元件安装在其表面上; 在第一金属层和第四金属层之间提供金属纳米糊状物，通过将平均直径为100nm以下的第三金属制成的细颗粒分散在有机溶剂中而形成金属纳米糊剂; 加热或加热和加压半导体元件和金属基底之间，从而除去溶剂。 此外，第一，第三和第四金属中的每一个由金，银，铂，铜，镍，铬，铁，铅和钴的任何金属制成，含有至少一种金属的合金或 金属或合金。 通过制造方法，可以有利地将半导体元件与金属基板结合。
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公开(公告)号：US20140030634A1
公开(公告)日：2014-01-30
申请号：US13819390
申请日：2011-08-30
Applicant: Toshikazu Nanbu , Kenji Miyamoto , Masayuki Inoue , Chika Yamamoto , Yoshitaka Uehara , Akio Hirose
Inventor： Toshikazu Nanbu , Kenji Miyamoto , Masayuki Inoue , Chika Yamamoto , Yoshitaka Uehara , Akio Hirose
IPC: B23K20/00
Abstract: An inexpensive bonding method is provided to bond materials constituted of an aluminum-based metal to each other at a low temperature and a low pressure while inhibiting deformation, without requiring the use of a flux and minimizing the influence on the base materials and the periphery. Also provided are various bonded parts obtained by the bonding method. An insert material comprising Zn as an element that undergoes a eutectic reaction with Al is interposed between two materials constituted of an aluminum-based metal. The two materials are heated, while being pressed against each other, to a temperature at which the eutectic reaction takes place, thereby generating, at the bonding interface between the two materials, a melt due to the eutectic reaction with some of the Al contained in the base materials and discharging the Al oxide films from the bonding interface together with the melt. Thus, the two materials are bonded.
Abstract translation: 提供廉价的接合方法，以便在不需要使用助焊剂并且最小化对基材和周边的影响的同时，在低温和低压下将由铝基金属构成的材料彼此粘合，同时抑制变形。 还提供了通过接合方法获得的各种粘合部件。 包含Zn作为与Al发生共晶反应的元素的插入材料插入由铝基金属构成的两种材料之间。 将这两种材料在彼此挤压的同时加热到发生共晶反应的温度，从而在两种材料之间的结合界面处产生熔体，这是由于与包含在其中的一些Al的共晶反应 基材并与熔融物一起从接合界面排出Al氧化物膜。 因此，两种材料结合。
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公开(公告)号：US20060150387A1
公开(公告)日：2006-07-13
申请号：US11301115
申请日：2005-12-13
Applicant: Kojiro Kobayashi , Akio Hirose , Shigeyuki Nakagawa , Kenji Miyamoto , Minoru Kasukawa , Masayuki Inoue , Tetsuji Morita
Inventor： Kojiro Kobayashi , Akio Hirose , Shigeyuki Nakagawa , Kenji Miyamoto , Minoru Kasukawa , Masayuki Inoue , Tetsuji Morita
IPC: B23P25/00
CPC classification number: B23K11/20 , B23K11/166 , B23K20/2275 , B23K26/211 , B23K26/32 , B23K26/323 , B23K2101/34 , B23K2103/08 , B23K2103/20 , B23K2103/50 , Y10T29/49885
Abstract: According to a metal joining method of the present invention, first and second dissimilar metals are joined together by interposing between the first and second metal materials a third metal material dissimilar to the first and second metal materials and causing eutectic melting at least either at an interface between the first and third metal materials or at an interface between the second and third metal materials.
Abstract translation: 根据本发明的金属接合方法，通过在第一和第二金属材料之间插入与第一和第二金属材料不同的第三金属材料，将第一和第二异种金属接合在一起，并使至少在界面 在第一和第三金属材料之间或在第二和第三金属材料之间的界面处。
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公开(公告)号：US08020749B2
公开(公告)日：2011-09-20
申请号：US12944421
申请日：2010-11-11
Applicant: Kojiro Kobayashi , Akio Hirose , Shigeyuki Nakagawa , Kenji Miyamoto , Minoru Kasukawa , Masayuki Inoue , Tetsuji Morita
Inventor： Kojiro Kobayashi , Akio Hirose , Shigeyuki Nakagawa , Kenji Miyamoto , Minoru Kasukawa , Masayuki Inoue , Tetsuji Morita
CPC classification number: B23K11/20 , B23K11/166 , B23K20/2275 , B23K26/211 , B23K26/32 , B23K26/323 , B23K2101/34 , B23K2103/08 , B23K2103/20 , B23K2103/50 , Y10T29/49885
Abstract: According to a metal joining method of the present invention, first and second dissimilar metals are joined together by interposing between the first and second metal materials a third metal material dissimilar to the first and second metal materials and causing eutectic melting at least either at an interface between the first and third metal materials or at an interface between the second and third metal materials.
Abstract translation: 根据本发明的金属接合方法，通过在第一和第二金属材料之间插入与第一和第二金属材料不同的第三金属材料，将第一和第二异种金属接合在一起，并使至少在界面 在第一和第三金属材料之间或在第二和第三金属材料之间的界面处。
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公开(公告)号：US07900578B2
公开(公告)日：2011-03-08
申请号：US11783562
申请日：2007-04-10
Applicant: Akio Hirose , Katsuhiko Goto
Inventor： Akio Hirose , Katsuhiko Goto
IPC: B05C13/00
CPC classification number: F04B49/08 , B05B13/0221 , B05B13/0242 , B05B13/0431 , B25J9/0096
Abstract: A carrying system includes first and second carrying machines each of which includes a holding unit, a base and a linkage having pivotally joined first and second links. The holding unit can be moved, by turning the second link relative to the first link which is turned relative to the base, along a substantially arc carrying route extending round the pedestal between a loading position and a processing position. The arc carrying route is closer to the pedestal with respect to an imaginary circle having its center on the pedestal and a radius corresponding to the distance between the pedestal and either of the loading position and the processing position.
Abstract translation: 承载系统包括第一和第二搬运机械，每个承载机器包括保持单元，基座和具有枢转连接的第一和第二连杆的连杆。 可以通过相对于相对于基座转动的第一连杆转动第二连杆，沿着在装载位置和处理位置之间的基座延伸的基本上圆弧的运送路线来移动保持单元。 电弧携带路径相对于其在基座上的中心的假想圆更靠近基座，并且与基座与装载位置和处理位置中的任一个之间的距离相对应。
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Patent Agency Ranking
公开(公告)号：US07850059B2
公开(公告)日：2010-12-14
申请号：US11301115
申请日：2005-12-13
Applicant: Kojiro Kobayashi , Akio Hirose , Shigeyuki Nakagawa , Kenji Miyamoto , Minoru Kasukawa , Masayuki Inoue , Tetsuji Morita
Inventor： Kojiro Kobayashi , Akio Hirose , Shigeyuki Nakagawa , Kenji Miyamoto , Minoru Kasukawa , Masayuki Inoue , Tetsuji Morita
CPC classification number: B23K11/20 , B23K11/166 , B23K20/2275 , B23K26/211 , B23K26/32 , B23K26/323 , B23K2101/34 , B23K2103/08 , B23K2103/20 , B23K2103/50 , Y10T29/49885
Abstract: According to a metal joining method of the present invention, first and second dissimilar metals are joined together by interposing between the first and second metal materials a third metal material dissimilar to the first and second metal materials and causing eutectic melting at least either at an interface between the first and third metal materials or at an interface between the second and third metal materials.
Abstract translation: 根据本发明的金属接合方法，通过在第一和第二金属材料之间插入与第一和第二金属材料不同的第三金属材料，将第一和第二异种金属接合在一起，并使至少在界面 在第一和第三金属材料之间或在第二和第三金属材料之间的界面处。
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公开(公告)号：US07984840B2
公开(公告)日：2011-07-26
申请号：US12944417
申请日：2010-11-11
Applicant: Kojiro Kobayashi , Akio Hirose , Shigeyuki Nakagawa , Kenji Miyamoto , Minoru Kasukawa , Masayuki Inoue , Tetsuji Morita
Inventor： Kojiro Kobayashi , Akio Hirose , Shigeyuki Nakagawa , Kenji Miyamoto , Minoru Kasukawa , Masayuki Inoue , Tetsuji Morita
CPC classification number: B23K11/20 , B23K11/166 , B23K20/2275 , B23K26/211 , B23K26/32 , B23K26/323 , B23K2101/34 , B23K2103/08 , B23K2103/20 , B23K2103/50 , Y10T29/49885
Abstract: According to a metal joining method of the present invention, first and second dissimilar metals are joined together by interposing between the first and second metal materials a third metal material dissimilar to the first and second metal materials and causing eutectic melting at least either at an interface between the first and third metal materials or at an interface between the second and third metal materials.
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公开(公告)号：US07361590B2
公开(公告)日：2008-04-22
申请号：US11334391
申请日：2006-01-19
Applicant: Kojiro Kobayashi , Akio Hirose , Masanori Yamagiwa
Inventor： Kojiro Kobayashi , Akio Hirose , Masanori Yamagiwa
IPC: H01L21/4763 , H01L21/44
CPC classification number: H01L24/32 , H01L23/3735 , H01L23/3736 , H01L24/29 , H01L24/83 , H01L2224/04026 , H01L2224/2908 , H01L2224/29101 , H01L2224/29111 , H01L2224/29139 , H01L2224/29339 , H01L2224/29344 , H01L2224/29369 , H01L2224/32245 , H01L2224/8184 , H01L2224/83801 , H01L2224/8384 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/10253 , H01L2924/10272 , H01L2924/10329 , H01L2924/19043 , H01L2924/00 , H01L2924/01014 , H01L2924/00014 , H01L2924/3512
Abstract: A method of manufacturing a semiconductor device includes: preparing a semiconductor element having a first metal layer made of first metal on a surface thereof, and a metal substrate made of second metal, the metal substrate having a fourth metal layer made of fourth metal on a surface thereof, and mounting the semiconductor element on the surface thereof; providing metal nanopaste between the first metal layer and the fourth metal layer, the metal nanopaste being formed by dispersing fine particles made of third metal with a mean diameter of 100 nm or less into an organic solvent; and heating, or heating and pressurizing the semiconductor element and the metal substrate between which the metal nanopaste is provided, thereby removing the solvent. Further, each of the first, third and fourth metals is made of any metal of gold, silver, platinum, copper, nickel, chromium, iron, lead, and cobalt, an alloy containing at least one of the metals, or a mixture of the metals or the alloys. By the manufacturing method, it is possible to bond the semiconductor element to the metal substrate favorably.
Abstract translation: 一种制造半导体器件的方法包括：制备其表面上具有由第一金属制成的第一金属层的半导体元件和由第二金属制成的金属基板，所述金属基板具有由第四金属制成的第四金属层 表面，并将半导体元件安装在其表面上; 在第一金属层和第四金属层之间提供金属纳米糊状物，通过将平均直径为100nm以下的第三金属制成的细颗粒分散在有机溶剂中而形成金属纳米糊剂; 加热或加热和加压半导体元件和金属基底之间，从而除去溶剂。 此外，第一，第三和第四金属中的每一个由金，银，铂，铜，镍，铬，铁，铅和钴的任何金属制成，含有至少一种金属的合金或 金属或合金。 通过制造方法，可以有利地将半导体元件与金属基板结合。
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公开(公告)号：US20060160330A1
公开(公告)日：2006-07-20
申请号：US11334391
申请日：2006-01-19
Applicant: Kojiro Kobayashi , Akio Hirose , Masanori Yamagiwa
Inventor： Kojiro Kobayashi , Akio Hirose , Masanori Yamagiwa
CPC classification number: H01L24/32 , H01L23/3735 , H01L23/3736 , H01L24/29 , H01L24/83 , H01L2224/04026 , H01L2224/2908 , H01L2224/29101 , H01L2224/29111 , H01L2224/29139 , H01L2224/29339 , H01L2224/29344 , H01L2224/29369 , H01L2224/32245 , H01L2224/8184 , H01L2224/83801 , H01L2224/8384 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/10253 , H01L2924/10272 , H01L2924/10329 , H01L2924/19043 , H01L2924/00 , H01L2924/01014 , H01L2924/00014 , H01L2924/3512
Abstract: A method of manufacturing a semiconductor device includes: preparing a semiconductor element having a first metal layer made of first metal on a surface thereof, and a metal substrate made of second metal, the metal substrate having a fourth metal layer made of fourth metal on a surface thereof, and mounting the semiconductor element on the surface thereof; providing metal nanopaste between the first metal layer and the fourth metal layer, the metal nanopaste being formed by dispersing fine particles made of third metal with a mean diameter of 100 nm or less into an organic solvent; and heating, or heating and pressurizing the semiconductor element and the metal substrate between which the metal nanopaste is provided, thereby removing the solvent. Further, each of the first, third and fourth metals is made of any metal of gold, silver, platinum, copper, nickel, chromium, iron, lead, and cobalt, an alloy containing at least one of the metals, or a mixture of the metals or the alloys. By the manufacturing method, it is possible to bond the semiconductor element to the metal substrate favorably.
Abstract translation: 一种制造半导体器件的方法包括：制备其表面上具有由第一金属制成的第一金属层的半导体元件和由第二金属制成的金属基板，所述金属基板具有由第四金属制成的第四金属层 表面，并将半导体元件安装在其表面上; 在第一金属层和第四金属层之间提供金属纳米糊状物，通过将平均直径为100nm以下的第三金属制成的细颗粒分散在有机溶剂中而形成金属纳米糊剂; 加热或加热和加压半导体元件和金属基底之间，从而除去溶剂。 此外，第一，第三和第四金属中的每一个由金，银，铂，铜，镍，铬，铁，铅和钴的任何金属制成，含有至少一种金属的合金或 金属或合金。 通过制造方法，可以有利地将半导体元件与金属基板结合。
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公开(公告)号：US4579746A
公开(公告)日：1986-04-01
申请号：US683929
申请日：1984-12-20
Applicant: Akio Hirose
Inventor： Akio Hirose
Abstract: A new method of preparing a cooked and frozen noodle product capable of being re-cooked to the "ready-to-eat" state uniformly in its texture with recovering the original, good chewiness of the non-frozen, cooked noodle product, is now provided, which method comprises applying water onto the outer, exposing surfaces of the noodles cooked and frozen in a clump form, followed by freezing the applied water on the noodle surfaces.
Abstract translation: 现在，制作一种熟制冷冻面条产品的新方法，能够恢复原来的非冷冻熟面条产品的良好咀嚼性，能够在其质地上均匀地重新煮熟成“即食”状态。 所提供的方法包括将水施加到煮熟并冷冻成块状的面的外部暴露表面，然后将施用的水冷冻在面条表面上。
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