公开(公告)号：US08821684B2

公开(公告)日：2014-09-02

申请号：US12363070

申请日：2009-01-30

申请人： Akio Ui ,  Naoki Tamaoki ,  Takashi Ichikawa ,  Hisataka Hayashi ,  Takeshi Kaminatsui ,  Shinji Himori ,  Norikazu Yamada ,  Takeshi Ohse ,  Jun Abe

发明人： Akio Ui ,  Naoki Tamaoki ,  Takashi Ichikawa ,  Hisataka Hayashi ,  Takeshi Kaminatsui ,  Shinji Himori ,  Norikazu Yamada ,  Takeshi Ohse ,  Jun Abe

IPC分类号： C23F1/00 ,  C23C16/50 ,  H01L21/306 ,  H01J37/32

CPC分类号： H01J37/32027 ,  H01J37/32045 ,  H01J37/32091

摘要： A substrate plasma processing apparatus includes a substrate holding electrode and a counter electrode which are arranged in a chamber, a high frequency generating device which applies a high frequency of 50 MHZ or higher to the substrate holding electrode, a DC negative pulse generating device which applies a DC negative pulse voltage in a manner of superimposing on the high frequency, and a controller controlling to cause intermittent application of the high frequency and cause intermittent application of the DC negative pulse voltage according to the timing of on or off of the high frequency.

摘要翻译： 衬底等离子体处理装置包括布置在腔室中的衬底保持电极和对电极，向衬底保持电极施加50MHz以上的高频的高频发生装置，应用了DC负脉冲发生装置 以高频重叠的方式设置直流负脉冲电压，以及控制器，根据高频开启或关闭的定时控制高频频率的间歇施加，直流负脉冲电压的间歇施加。

公开(公告)号：US08252193B2

公开(公告)日：2012-08-28

申请号：US12052522

申请日：2008-03-20

申请人： Akio Ui ,  Takashi Ichikawa ,  Naoki Tamaoki ,  Hisataka Hayashi ,  Akihiro Kojima

发明人： Akio Ui ,  Takashi Ichikawa ,  Naoki Tamaoki ,  Hisataka Hayashi ,  Akihiro Kojima

IPC分类号： G01R31/00 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/3065 ,  H01J37/32091 ,  H01J37/32137 ,  H01J37/32165

摘要： A substrate plasma processing apparatus includes a chamber of which an interior is evacuated under a predetermined vacuum condition; an RF electrode which is disposed in the chamber and configured so as to hold a substrate to be processed on a main surface thereof; an opposing electrode which is disposed opposite to the RF electrode in the chamber; an RF voltage applying device for applying an RF voltage with a predetermined frequency to the RF electrode; and a pulsed voltage applying device for applying a pulsed voltage to the RF electrode so as to be superimposed with the RF voltage and which includes a controller for controlling a timing in application of the pulsed voltage and defining a pause period of the pulsed voltage.

摘要翻译： 基板等离子体处理装置包括在预定的真空条件下将内部抽真空的室; RF电极，其设置在所述室中并且构造成在其主表面上保持要处理的基板; 在所述室中与所述RF电极相对设置的对置电极; RF电压施加装置，用于向RF电极施加预定频率的RF电压; 以及脉冲电压施加装置，用于向RF电极施加脉冲电压以与RF电压叠加，并且包括用于控制施加脉冲电压的定时并且限定脉冲电压的暂停时段的控制器。

公开(公告)号：US20080237185A1

公开(公告)日：2008-10-02

申请号：US12052522

申请日：2008-03-20

申请人： Akio UI ,  Takashi Ichikawa ,  Naoki Tamaoki ,  Hisataka Hayashi ,  Akihiro Kojima

发明人： Akio UI ,  Takashi Ichikawa ,  Naoki Tamaoki ,  Hisataka Hayashi ,  Akihiro Kojima

IPC分类号： H01L21/3065

CPC分类号： H01L21/3065 ,  H01J37/32091 ,  H01J37/32137 ,  H01J37/32165

摘要： A substrate plasma processing apparatus includes a chamber of which an interior is evacuated under a predetermined vacuum condition; an RF electrode which is disposed in the chamber and configured so as to hold a substrate to be processed on a main surface thereof; an opposing electrode which is disposed opposite to the RF electrode in the chamber; an RF voltage applying device for applying an RF voltage with a predetermined frequency to the RF electrode; and a pulsed voltage applying device for applying a pulsed voltage to the RF electrode so as to be superimposed with the RF voltage and which includes a controller for controlling a timing in application of the pulsed voltage and defining a pause period of the pulsed voltage.

摘要翻译： 基板等离子体处理装置包括在预定的真空条件下将内部抽真空的室; RF电极，其设置在所述室中并且构造成在其主表面上保持要处理的基板; 在所述室中与所述RF电极相对设置的对置电极; RF电压施加装置，用于向RF电极施加预定频率的RF电压; 以及脉冲电压施加装置，用于向RF电极施加脉冲电压以与RF电压叠加，并且包括用于控制施加脉冲电压的定时并且限定脉冲电压的暂停时段的控制器。

公开(公告)号：US20070118341A1

公开(公告)日：2007-05-24

申请号：US11556828

申请日：2006-11-06

申请人： Naoki Tamaoki ,  Akio Ui ,  Toshiro Takase ,  Takashi Ichikawa

发明人： Naoki Tamaoki ,  Akio Ui ,  Toshiro Takase ,  Takashi Ichikawa

IPC分类号： G06F17/10

CPC分类号： G06F17/5018 ,  C23C14/54 ,  C23C16/52 ,  G06F2217/10

摘要： A calculating unit calculates either one of a reaction probability between a chemical species used in a semiconductor process and a semiconductor device and a deactivation probability of the chemical species, according to either one of a structure of the semiconductor device and a plurality of materials. A simulation unit performs a simulation of a physical phenomenon occurring in a reaction chamber based on either one of the reaction probability and the deactivation probability.

摘要翻译： 计算单元根据半导体器件的结构和多种材料中的任一种，计算半导体工艺中使用的化学物质与半导体器件之间的反应概率和化学物质的失活概率之一。 模拟单元基于反应概率和去激活概率中的任何一个对反应室中发生的物理现象进行模拟。

公开(公告)号：US08548787B2

公开(公告)日：2013-10-01

申请号：US11556828

申请日：2006-11-06

申请人： Naoki Tamaoki ,  Akio Ui ,  Toshiro Takase ,  Takashi Ichikawa

发明人： Naoki Tamaoki ,  Akio Ui ,  Toshiro Takase ,  Takashi Ichikawa

IPC分类号： G06G7/58

CPC分类号： G06F17/5018 ,  C23C14/54 ,  C23C16/52 ,  G06F2217/10

摘要： A calculating unit calculates either one of a reaction probability between a chemical species used in a semiconductor process and a semiconductor device and a deactivation probability of the chemical species, according to either one of a structure of the semiconductor device and a plurality of materials. A simulation unit performs a simulation of a physical phenomenon occurring in a reaction chamber based on either one of the reaction probability and the deactivation probability.

摘要翻译： 计算单元根据半导体器件的结构和多种材料中的任一种，计算半导体工艺中使用的化学物质与半导体器件之间的反应概率和化学物质的失活概率之一。 模拟单元基于反应概率和去激活概率中的任何一个对反应室中发生的物理现象进行模拟。

公开(公告)号：US20090048813A1

公开(公告)日：2009-02-19

申请号：US12192197

申请日：2008-08-15

申请人： Takashi Ichikawa ,  Naoki Tamaoki ,  Toshiro Takase

发明人： Takashi Ichikawa ,  Naoki Tamaoki ,  Toshiro Takase

IPC分类号： G06F17/10

CPC分类号： G06F17/5018

摘要： A simulation method is configured to simulate a feature profile of a material surface. The simulation method includes using an algorithm of repeating a step of calculating a surface growth rate and a step of skipping the calculation of the surface growth rate. The surface growth rate is calculated in the step of skipping the calculation of the algorithm if the material surface traverses a material interface.

摘要翻译： 模拟方法被配置为模拟材料表面的特征轮廓。 模拟方法包括使用重复计算表面生长速率的步骤的算法和跳过表面生长速率的计算的步骤。 如果材料表面穿过材料界面，则在跳过算法计算的步骤中计算出表面生长速率。

公开(公告)号：US08209155B2

公开(公告)日：2012-06-26

申请号：US12192179

申请日：2008-08-15

申请人： Takashi Ichikawa ,  Naoki Tamaoki ,  Toshiro Takase

发明人： Takashi Ichikawa ,  Naoki Tamaoki ,  Toshiro Takase

IPC分类号： G06F7/60 ,  G06F17/10

CPC分类号： G06F17/5018

摘要： A simulation method includes dividing a material surface into finite computational elements, and calculating a deposition rate or etching rate at each of the computational elements to simulate a feature profile of the material surface, the calculating including calculating an indirect effect of a first computational element on the deposition rate or etching rate of a second computational element. The calculating the indirect effect includes correcting a surface profile at the first computational element on the basis of a surface structure around the first computational element, and calculating the indirect effect on the basis of the corrected surface profile at the first computational element.

摘要翻译： 一种模拟方法包括将材料表面划分为有限计算元件，以及计算每个计算元件上的沉积速率或蚀刻速率以模拟材料表面的特征轮廓，所述计算包括计算第一计算元素的间接效应 第二计算元件的沉积速率或蚀刻速率。 计算间接效应包括基于围绕第一计算元件的表面结构来校正第一计算元件处的表面轮廓，以及基于第一计算元件处的校正表面轮廓计算间接效应。

公开(公告)号：US20090055143A1

公开(公告)日：2009-02-26

申请号：US12192179

申请日：2008-08-15

申请人： Takashi Ichikawa ,  Naoki Tamaoki ,  Toshiro Takase

发明人： Takashi Ichikawa ,  Naoki Tamaoki ,  Toshiro Takase

IPC分类号： G06F17/10

CPC分类号： G06F17/5018

摘要： A simulation method includes dividing a material surface into finite computational elements, and calculating a deposition rate or etching rate at each of the computational elements to simulate a feature profile of the material surface, the calculating including calculating an indirect effect of a first computational element on the deposition rate or etching rate of a second computational element. The calculating the indirect effect includes correcting a surface profile at the first computational element on the basis of a surface structure around the first computational element, and calculating the indirect effect on the basis of the corrected surface profile at the first computational element.

摘要翻译： 一种模拟方法包括将材料表面划分为有限计算元件，以及计算每个计算元件上的沉积速率或蚀刻速率以模拟材料表面的特征轮廓，所述计算包括计算第一计算元素的间接效应 第二计算元件的沉积速率或蚀刻速率。 计算间接效应包括基于围绕第一计算元件的表面结构来校正第一计算元件处的表面轮廓，以及基于第一计算元件处的校正表面轮廓计算间接效应。

公开(公告)号：US20050082002A1

公开(公告)日：2005-04-21

申请号：US10927097

申请日：2004-08-27

申请人： Yuusuke Sato ,  Naoki Tamaoki ,  Satoko Seta ,  Regis Zils ,  Jun Sonobe ,  Takako Kimura ,  Kayo Momoda

发明人： Yuusuke Sato ,  Naoki Tamaoki ,  Satoko Seta ,  Regis Zils ,  Jun Sonobe ,  Takako Kimura ,  Kayo Momoda

IPC分类号： B08B7/00 ,  C23C16/44 ,  B08B9/00 ,  C23F1/00

CPC分类号： B08B7/04 ,  B08B7/00 ,  C23C16/4405

摘要： A method of cleaning a film-forming apparatus to remove at least a part of a silicon-based material deposited on a constituent member of the film-forming apparatus after used to form thin films includes introducing a first-gas including fluorine gas and a second gas including nitrogen monoxide gas into the film-forming apparatus, and heating the constituent member. The constituent member includes quartz or silicon carbide, and the silicon-based material includes silicon nitride.

摘要翻译： 在形成薄膜之后，清洗膜形成装置以去除沉积在成膜装置的构成部件上的至少一部分硅基材料的方法包括：引入包含氟气的第一气体和第二气体 包括一氧化氮气体的气体进入成膜装置，并加热构成部件。 构成构件包括石英或碳化硅，硅基材料包括氮化硅。

公开(公告)号：US5926402A

公开(公告)日：1999-07-20

申请号：US811526

申请日：1997-03-04

申请人： Shinichi Tatsuta ,  Yuusuke Sato ,  Naoki Tamaoki ,  Hiroshi Komiyama ,  Yasuyuki Egashira

发明人： Shinichi Tatsuta ,  Yuusuke Sato ,  Naoki Tamaoki ,  Hiroshi Komiyama ,  Yasuyuki Egashira

IPC分类号： C30B28/12 ,  C23C16/52 ,  C30B29/06 ,  G06F17/50 ,  G06F19/00 ,  G06Q10/04 ,  G06Q50/00 ,  G06Q50/04 ,  H01L21/00 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/66 ,  H01L29/00 ,  G06F9/44

CPC分类号： G06F17/5018 ,  G06F2217/10 ,  Y10T428/24975

摘要： A simulation method for performing a simulation with respect to a trace object that an event occurs depending on a probability in a domain to be analyzed. The simulation method includes the step of dividing a flowing field into cells serving as domains to be analyzed, the step of arranging molecules serving as the target object in the cells, the step of performing the simulation such that the molecules are moved in the cells and the number of stickings or a sticking amount occurring on a wall surface or a film portion as the result of the movement larger than the number of times of the event or a change amount led by the probability, and the step of outputting, as a simulation result, a film profile obtained as the result of the simulation.

摘要翻译： 一种仿真方法，用于根据待分析的域中的概率来执行关于事件发生的跟踪对象的模拟。 模拟方法包括将流场划分为用作要分析的域的小区的步骤，在小区中布置用作目标对象的分子的步骤，执行模拟以使分子在小区中移动的步骤，以及 作为移动结果的壁面或薄膜部分发生的粘附数或粘附量大于由概率引起的事件次数或变化量的次数，以及作为模拟输出的步骤 结果，作为模拟结果获得的电影资料。